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7341844 Methods for diagnosing autism  
The invention relates to the use of Reelin as a marker for diagnosing psychiatric conditions. The disclosed tools and techniques can facilitate the diagnosis of psychiatric disorders including...
7091130 Method of forming a nanocluster charge storage device  
A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters. The stack includes a first-formed polysilicon-nitride...
6884700 Method of manufacturing device, device, and electronic apparatus  
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a...
6429035 Method of growing silicon crystal in liquid phase and method of producing solar cell  
A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined...
6413791 Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance  
An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof, as well as a light-emitting diode (LED). It has...
6228181 Making epitaxial semiconductor device  
An epitaxial semiconductor wafer characterized by making the P-N junction face which having either flat or uneven face in a manner of uniformed thickness from the top surface, due to making a P or...
6215151 Methods of forming integrated circuitry and integrated circuitry  
Integrated circuitry and methods of forming integrated circuitry are described. In one implementation, a common masking step is utilized to provide source/drain diffusion regions and halo ion...
6100167 Process for the removal of copper from polished boron doped silicon wafers  
A process for removing copper from a boron doped, polished silicon wafer which contains copper on its polished surface and in its interior. In the process, the wafer is annealed at a temperature of...
5744396 Semiconductor device formed on a highly doped N+ substrate  
A method for fabricating semiconductor substrates with resistivity below 0.02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above...
5196369 Method of producing a light emitting diode array device  
A method of fabricating light emitting diode array devices is provided, said method comprising the steps of layering through crystal growth the second semiconductor layer with an impurity serving...
5169799 Method for forming a doped ZnSe single crystal  
A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved...
5051376 Method for producing semiconductor device and semiconductor device produced thereby  
A method for producing a semiconductor device comprises the steps of: preparing a III b -V b group compound single crystalline semiconductor substrate produced by a liquid encapsulated...
5047355 Semiconductor diode and method for making it  
A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned...
4978636 Method of making a semiconductor diode  
High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150° C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon,...
4910156 Neutron transmutation doping of a silicon wafer  
A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si 30 contained in said...
4836788 Production of solid-state image pick-up device with uniform distribution of dopants  
A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic...
4729963 Fabrication method for modified planar semiconductor structures  
A process for fabricating a semiconductor device or a semiconductor substrate having a first major surface on which active semiconductor devices are to be formed, and a second major surface. An...
4705760 Preparation of a surface for deposition of a passinating layer  
A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and...
4685979 Method of manufacturing a group II-VI compound semiconductor device having a pn junction  
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal...
4662061 Method for fabricating a CMOS well structure  
A process is disclosed for fabricating N-wells in a P-type substrate. An N-type epitaxial layer is formed on the surface of a P+ substrate. The N-type epitaxial layer is then masked and a doubly...
4547256 Method for thermally treating a semiconductor substrate  
Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal...
4526632 Method of fabricating a semiconductor pn junction  
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in...
4514896 Method of forming current confinement channels in semiconductor devices  
Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region....
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor  
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing...
4328611 Method for manufacture of an interdigitated collector structure utilizing etch and refill techniques  
A bipolar semiconductor is manufactured by forming a plurality of grooves along the vertical (111) planes in a high resistivity epitaxial silicon layer which is disposed on an N+ (110) oriented...
4327475 Method of manufacturing a FET device disposed in a compound s/c layer on a semi-insulating substrate  
A method of manufacturing a field effect transistor uses a semiinsulating substrate consisting of a compound semiconductor, and an N type semiconductor layer formed on the substrate. The method...
4303463 Method of peeling thin films using directional heat flow  
A method is disclosed for peeling thin layers of crystal from the substrates on which they have been grown. A thin layer of single-crystal material is grown on a single-crystal substrate having a...
4235651 Fabrication of GaAs-GaAlAs solar cells  
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type...
4163987 GaAs-GaAlAs solar cells  
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type...
4154630 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process  
A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centers. The method is characterized in that the deposition of the...
4141764 Process for the manufacture of silicon of large surface area bonded to a substrate and silicon-bonded substrates so made  
Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 μm onto panel-shaped substrates of glassy...
4126496 Method of making a single chip temperature compensated reference diode  
A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to...
4101925 Centrifugal forming thin films and semiconductors and semiconductor devices  
A method and apparatus for centrifugally forming thin semiconductor films or layers wherein centrifugal force is applied to a molten single-crystal forming material to overcome surface tension and...
4075043 Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique  
A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy...
3948693 Process for the production of yellow glowing gallium phosphide diodes  
Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide,...
3926693 Method of making a double diffused trapatt diode  
A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first...
3880682 Method of simultaneous double diffusion  
The oxide layer is produced by thermal oxidation of the silicon surface using a processing gas comprising oxygen and an oxide of the dopant. This insures that during the production of the oxide...
3762968 METHOD OF FORMING REGION OF A DESIRED CONDUCTIVITY TYPE IN THE SURFACE OF A SEMICONDUCTOR BODY  
A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium...
3642544 METHOD OF FABRICATING SOLID-STATE DEVICES  
An electroluminescent diode with a negative resistance characteristic at room temperature is obtained by establishing a host semiconductor substrate of gallium arsenide crystal with a deep level...
3634738 DIODE HAVING A VOLTAGE VARIABLE CAPACITANCE CHARACTERISTIC AND METHOD OF MAKING SAME  
In the method of the present invention, a lightly doped layer of semiconductive material is epitaxially grown on a relatively highly doped substrate so as to provide a relatively sharply defined...
3550260 METHOD FOR MAKING A HOT CARRIER PN-DIODE  
Disclosed is a Schottky barrier or hot carrier diode and process for making same wherein a diffused PN junction and a Schottky barrier junction are both formed in a body of semiconductor material....
3493443 HYPERABRUPTP-N JUNCTIONS IN SEMICONDUCTORS BY SUCCESSIVE DOUBLE DIFFUSION OF IMPURITIES  
3473975 SEMICONDUCTOR DEVICES  
3451866 SEMICONDUCTOR DEVICE  
3436279 PROCESS OF MAKING A TRANSISTOR WITH AN INVERTED STRUCTURE  
3378915 Method of making a planar diffused semiconductor voltage reference diode  
3345221 Method of making a semiconductor device having improved pn junction avalanche characteristics  
3341379 Method of manufacture of silicon transistor  
3335038 Methods of producing single crystals on polycrystalline substrates and devices using same  
3264148 Method of manufacturing heterojunction elements  
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