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8183879 |
Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are...
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8143149 |
Method of forming a flexible nanostructured material for photovoltaic panels
An efficient and low-cost method is intended for forming a flexible nanostructured material suitable for use as an active element of a photovoltaic panel. The method consists of evaporating a...
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8143118 |
TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions
A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are...
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8093138 |
Method of fabricating an epitaxially grown layer
A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of...
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8048770 |
Method for manufacturing semiconductor device
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate,...
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8043944 |
Process for enhancing solubility and reaction rates in supercritical fluids
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of...
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8043936 |
Method for manufacturing semiconductor device
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate,...
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8030191 |
Method of manufacturing micro structure, and method of manufacturing mold material
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are...
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7998789 |
Method and system for forming copper indium gallium sulfur selenide absorption layer and cadmium sulfide buffer layer under non-vacuum condition
A method and a system for forming a copper indium gallium sulfur selenide (CIGSSe) absorption layer and a cadmium sulfide (CdS) buffer layer under non-vacuum condition is disclosed. A coating layer...
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7985698 |
Methods of forming patterned photoresist layers over semiconductor substrates
This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is...
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7915151 |
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest...
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7842588 |
Group-III metal nitride and preparation thereof
A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate...
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7785982 |
Structures containing electrodeposited germanium and methods for their fabrication
Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film,...
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7776709 |
Cut-and-paste imprint lithographic mold and method therefor
A method (and apparatus) of replicating a pattern on a structure, includes using imprint lithography to replicate a pattern formed on a first structure onto a portion of a second structure.
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7741198 |
Method for fabricating a probing pad of an integrated circuit chip
A method for fabricating a probing pad is disclosed. A substrate having thereon a dielectric layer is provided. An inlaid metal wiring is formed in the dielectric layer. The inlaid metal wiring and...
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7704863 |
Method of the application of a zinc sulfide buffer layer on a semiconductor substrate
Chemical bath deposition (CBD) has proved top be the most favorable method for application of a buffer layer to semiconductor substrates, for example, chalcopyrite thin-film solar cells, whereby...
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7687378 |
Fabricating method of nitride semiconductor substrate and composite material substrate
A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base...
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7682952 |
Method for forming low defect density alloy graded layers and structure containing such layers
A structure and method of forming same, comprising a low threading density alloy graded layer, deposited according to a deposition temperature profile in correspondence with increasing alloy...
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7674712 |
Patterning method for light-emitting devices
A method of patterning a substrate by mechanically locating a first masking film over the substrate; removing one or more first opening portions in first locations in the first masking film to form...
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7659202 |
Triaxial through-chip connection
A method performed on a wafer having multiple chips each including a doped semiconductor and substrate involves etching an annulus trench, metalizing an inner and an outer perimeter side wall of...
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7656679 |
Multi-layer substrate and manufacture method thereof
Disclosed are a multi-layer substrate and a manufacture method thereof. The multi-layer substrate of the present invention comprises a surface dielectric layer and at least one bond pad layer. The...
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7635860 |
Manufacturing method of organic thin-film transistors and equipment for manufacturing the same
To increase productivity of organic thin-film transistors, in an organic thin-film transistor manufacturing equipment, a liquid containing at least either one of a wiring material and a...
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7601217 |
Method of fabricating an epitaxially grown layer
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
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7541067 |
Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells
A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a...
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7538015 |
Method of manufacturing micro structure, and method of manufacturing mold material
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are...
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7381586 |
Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution
A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a...
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7329592 |
Method for screening crystallization conditions using multifunctional substrates
A method for producing crystals and for screening crystallization conditions of chemical materials on distinct metallic islands with specific functional groups by using multi-functional substrates...
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7316968 |
Methods of forming semiconductor devices having multiple channel MOS transistors
In a method of manufacturing a semiconductor device, a preliminary active pattern including gate layers and channel layers is formed on a substrate. The gate layers and the channel layers are...
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7265037 |
Nanowire array and nanowire solar cells and methods for forming the same
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any ...
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7250359 |
Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least...
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7220310 |
Nanoscale junction arrays and methods for making same
A nanoscale junction array includes an elongated nanowire and a plurality of elongated nanobelts. Each nanobelt has a proximal end and an opposite distal end. The proximal end of each nanobelt is...
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7151047 |
Stable, water-soluble quantum dot, method of preparation and conjugates thereof
A method for manufacturing powdered quantum dots comprising the steps of: a) reacting quantum dots comprising a core, a cap and a first ligand associated with the outer surfaces thereof with a...
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7141492 |
Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus
The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor...
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7115532 |
Methods of forming patterned photoresist layers over semiconductor substrates
This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is...
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7045446 |
Semiconductor device fabrication method
In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate...
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6918959 |
Semiconducting oxide nanostructures
Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure...
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6890781 |
Transparent layer of a LED device and the method for growing the same
A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for...
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6881654 |
Solder bump structure and laser repair process for memory device
A solder bump structure and laser repair process for memory device include forming a first dielectric layer on a bump pad of a semiconductor wafer. After that, the first dielectric layer is etched...
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6869863 |
Fabrication process of solar cell
Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for...
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6869864 |
Method for producing quantum dot silicate thin film for light emitting device
A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable...
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6838153 |
Layered product, capacitor and a method for producing the layered product
A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of...
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6620710 |
Forming a single crystal semiconductor film on a non-crystalline surface
A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation...
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6541354 |
Method for forming silicon film
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is...
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6478883 |
Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal...
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6452091 |
Method of producing thin-film single-crystal device, solar cell module and method of producing the same
The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to...
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6440765 |
Method for fabricating an infrared-emitting light-emitting diode
A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has,...
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6406982 |
Method of improving epitaxially-filled trench by smoothing trench prior to filling
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
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6395622 |
Manufacturing process of semiconductor devices
A manufacturing process of semiconductor devices comprises providing at least a wafer, bumping the wafer, testing the wafer, laser repairing, and dicing. The step of testing one bumped wafer is...
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6306736 |
Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of...
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6306739 |
Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
In this invention, one or more metal-containing sources and one or more ammonium halides are heated such that they evaporate into a vacuum environment (except that, in MOMBE, a beam of the...
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