Matches 1 - 44 out of 44
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7601217 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
7541067 Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells  
A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a...
7538010 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer by providing a support substrate that includes a region of weakness therein to define a support portion and a remainder portion on opposite sides of...
7538015 Method of manufacturing micro structure, and method of manufacturing mold material  
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are...
7381586 Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution  
A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a...
7329592 Method for screening crystallization conditions using multifunctional substrates  
A method for producing crystals and for screening crystallization conditions of chemical materials on distinct metallic islands with specific functional groups by using multi-functional substrates...
7316968 Methods of forming semiconductor devices having multiple channel MOS transistors  
In a method of manufacturing a semiconductor device, a preliminary active pattern including gate layers and channel layers is formed on a substrate. The gate layers and the channel layers are...
7265037 Nanowire array and nanowire solar cells and methods for forming the same  
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any...
7250359 Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization  
A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least...
7220310 Nanoscale junction arrays and methods for making same  
A nanoscale junction array includes an elongated nanowire and a plurality of elongated nanobelts. Each nanobelt has a proximal end and an opposite distal end. The proximal end of each nanobelt is...
7151047 Stable, water-soluble quantum dot, method of preparation and conjugates thereof  
A method for manufacturing powdered quantum dots comprising the steps of: a) reacting quantum dots comprising a core, a cap and a first ligand associated with the outer surfaces thereof with a...
7141492 Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus  
The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor...
7115532 Methods of forming patterned photoresist layers over semiconductor substrates  
This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is...
7045446 Semiconductor device fabrication method  
In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate...
6918959 Semiconducting oxide nanostructures  
Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure...
6914301 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same  
CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on...
6890781 Transparent layer of a LED device and the method for growing the same  
A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for...
6881654 Solder bump structure and laser repair process for memory device  
A solder bump structure and laser repair process for memory device include forming a first dielectric layer on a bump pad of a semiconductor wafer. After that, the first dielectric layer is etched...
6869864 Method for producing quantum dot silicate thin film for light emitting device  
A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable...
6869863 Fabrication process of solar cell  
Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for...
6838153 Layered product, capacitor and a method for producing the layered product  
A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of...
6620710 Forming a single crystal semiconductor film on a non-crystalline surface  
A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation...
6541354 Method for forming silicon film  
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is...
6478883 Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them  
A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal...
6452091 Method of producing thin-film single-crystal device, solar cell module and method of producing the same  
The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to...
6440765 Method for fabricating an infrared-emitting light-emitting diode  
A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has,...
6406982 Method of improving epitaxially-filled trench by smoothing trench prior to filling  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
6395622 Manufacturing process of semiconductor devices  
A manufacturing process of semiconductor devices comprises providing at least a wafer, bumping the wafer, testing the wafer, laser repairing, and dicing. The step of testing one bumped wafer is...
6306739 Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom  
In this invention, one or more metal-containing sources and one or more ammonium halides are heated such that they evaporate into a vacuum environment (except that, in MOMBE, a beam of the...
6306736 Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process  
A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of...
6228181 Making epitaxial semiconductor device  
An epitaxial semiconductor wafer characterized by making the P-N junction face which having either flat or uneven face in a manner of uniformed thickness from the top surface, due to making a P or...
6225149 Methods to fabricate thin film transistors and circuits  
A method for fabricating a thin film field effect transistor is described in this invention. The active layer of the thin film transistor (TFT) is formed by a low cost chemical bath deposition...
6225198 Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process  
A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of...
6089548 Process and device for converting a liquid stream flow into a gas stream flow  
In a method and an apparatus for converting a liquid flow into a gas flow, a liquid flow is introduced into an evaporation volume, the liquid flow is dispersed so as to enlarge the surface of the...
6083812 Heteroepitaxy by large surface steps  
A method for heteroepitaxial growth and the device wherein a single crystal ceramic substrate, preferably Y stabilized zirconia, MgAl 2 O 4 , A1 2 O 3 , 3C--SiC, 6H--SiC or MgO is cut and...
6060366 Method for manufacturing dram capacitor incorporating liquid phase deposition  
A method for forming a DRAM capacitor comprising the steps of first depositing conductive material over a dielectric layer and into a contact opening already formed in the dielectric layer, then...
5998304 Liquid phase deposition method for growing silicon dioxide film on III-V semiconductor substrate treated with ammonium hydroxide  
A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30° C.-50° C.) on a III-V...
5284781 Method of forming light emitting diode by LPE  
A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type...
4902644 Preservation of surface features on semiconductor surfaces  
The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin...
4885257 Gettering process with multi-step annealing and inert ion implantation  
A semiconductor substrate and process for making are disclosed. The substrate is suitable for use in manufacturing large scale integrated circuits. The process comprises the steps of heating a...
4082571 Process for suppressing parasitic components utilizing ion implantation prior to epitaxial deposition  
A process for suppressing parasitic components, in particular parasitic diodes and transistors, in integrated circuits which have, in particular, inversely operated transistors, in which a...
3936328 Process of manufacturing semiconductor devices  
A cylindrical substrate of semiconductive material is repeatedly incised by a saw to be formed with many parallel grooves while it has one portion of the peripheral portion remaining uncut...
2871149 Semiconductor method  
3821039 Title is not available  
Matches 1 - 44 out of 44