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7393710 Fabrication method of multi-wavelength semiconductor laser device  
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a...
7256110 Crystal manufacturing method  
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a...
7226850 Gallium nitride high electron mobility transistor structure  
A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second...
7179727 Formation of lattice-tuning semiconductor substrates  
A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls ( 2 ) on the surface,...
7125732 Semiconductor light emitting device and its manufacturing method  
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding...
7115427 Red light-emitting device and method for preparing the same  
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed...
7056789 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor  
The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with...
7041342 Thin-film solar cells and method of making  
There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas....
7022539 Vertical-cavity, surface-emission type laser diode and fabrication process thereof  
A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a...
6921726 Growing smooth semiconductor layers  
A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with...
6911367 Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions  
The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source...
6893968 Defect-minimizing, topology-independent planarization of process surfaces in semiconductor devices  
A process for planarizing a process layer having structures and has been applied to a working surface of a semiconductor device, includes abrading the process layer down to the working surface...
6890816 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices  
High quality epitaxial layers of monocrystalline perovskite materials ( 18 ) can be grown overlying monocrystalline substrates ( 12 ) such as gallium arsenide wafers by forming a metal template...
6872625 Field-effect transistor based on embedded cluster structures and process for its production  
Field-Effect Transistor Based on Embedded Cluster Structures and Process for Its Production In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain...
6864158 Method of manufacturing nitride semiconductor substrate  
A main surface of a base substrate of sapphire is selectively formed an irregular region on the main surface. Then, a semiconductor layer of gallium nitride is grown to fill recessed portions in...
6838361 Method of patterning a substrate  
The invention provides a method of pattering a substrate, in which a first material in solution is deposited on the substrate. The composition of the solution of the first material is selected so...
6838360 Non-volatile semiconductor memory with single layer gate structure  
A semiconductor device of this invention is a single-layer gate nonvolatile semiconductor memory in which a floating gate having a predetermined shape is formed on a semiconductor substrate. This...
6838359 Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy  
A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least...
6835671 Method of making an integrated circuit using an EUV mask formed by atomic layer deposition  
A extreme ultraviolet (EUV) mask blank having a reflective stack formed by depositing repeated periods of a silicon layer, a first barrier layer, a molybdenum layer, and a second barrier layer...
6784079 Method of manufacturing silicon  
A production method of silicon which comprises the steps of bringing a silane into contact with a surface of a substrate so as to cause silicon to be deposited while the surface of the substrate is...
6762113 Method for coating a semiconductor substrate with a mixture containing an adhesion promoter  
A method of coating a semiconductor substrate material with a coating material consisting of the steps of mixing an adhesion promoter with a coating material and applying the mixture to a...
6706585 Chemical vapor deposition process for fabricating layered superlattice materials  
A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first...
6673701 Atomic layer deposition methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
6660615 Method and apparatus for growing layer on one surface of wafer  
A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface....
6653211 Semiconductor substrate, SOI substrate and manufacturing method therefor  
A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound...
6562678 Chemical vapor deposition process for fabricating layered superlattice materials  
A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first...
6559037 Process for producing semiconductor device having crystallized film formed from deposited amorphous film  
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual...
6531408 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same  
A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than...
6472298 Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element  
The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic...
6391748 Method of epitaxial growth of high quality nitride layers on silicon substrates  
Aluminum nitride, AlN, layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth. The AlN layer is initially grown by subjecting the silicon substrate to background ammonia...
6335268 Plasma immersion ion processor for fabricating semiconductor integrated circuits  
An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced...
6306739 Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom  
In this invention, one or more metal-containing sources and one or more ammonium halides are heated such that they evaporate into a vacuum environment (except that, in MOMBE, a beam of the...
6242326 Method for fabricating compound semiconductor substrate having quantum dot array structure  
A method for fabricating a compound semiconductor substrate having a quantum dot array structure includes the steps of forming a plurality of dielectric thin layer patterns on a substrate, thereby...
6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate  
Method for forming a single crystal GaN semiconductor substrate and a GaN diode with the substrate is disclosed which forms in a short time period, has a low crystal defect concentration and allows...
6083813 Method for forming a compound semiconductor device using a buffer layer over a corrugated surface  
The method for forming the compound semiconductor device includes the step of forming a buffer layer so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms...
6045626 Substrate structures for electronic devices  
A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin...
6043138 Multi-step polysilicon deposition process for boron penetration inhibition  
The present invention provides an improved semiconductor device and method of impeding the diffusion of boron by providing at least one layer of polysilicon and an interface substance. A...
6033995 Inverted layer epitaxial liftoff process  
The invention relates to a method for integrating semiconductor device epilayers with arbitrary host substrates, where an indium gallium arsenide etch-stop layer (34) is deposited on an indium...
6030886 Growth of GaN on a substrate using a ZnO buffer layer  
To present a manufacturing method of semiconductor device capable of forming a homogeneous and highly reproducible gallium nitride crystal, comprising the steps of forming a zinc oxide layer on a...
5937317 Method of making a low resistivity silicon carbide boule  
A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure...
5937273 Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material  
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere...
5888885 Method for fabricating three-dimensional quantum dot arrays and resulting products  
In accordance with the invention, a uniformly spaced three-dimensional array of quantum dots is fabricated by forming a uniform grid of intersecting dislocation lines, nucleating a regular...
5578521 Semiconductor device with vaporphase grown epitaxial  
A silicon semiconductor substrate, on which an epitaxial layer is to be formed, is set in a reaction vessel having a heating mechanism, and a gas containing TMG and AsH 3 is introduced into the...
5543354 Method of fabricating a quantum dot structure on a (n11) substrate  
A semiconductor structure includes a first semiconductor barrier layer formed on a compound semiconductor substrate, a semiconductor carrier confinement layer formed on the semiconductor barrier...
5525537 Process of producing diamond composite structure for electronic components  
The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on...
5477809 Method of growth of CdTe on silicon by molecular beam epitaxy  
The invention provides an epitaxial growth method of CdTe on silicon by molecular beam epitaxy in which a Si(221) tilted by 6° or less toward [-1 -1 4] is used, whose surface is rinsed in an ultra...
5424243 Method of making a compound semiconductor crystal-on-substrate structure  
A method of producing a compound semiconductor crystal-on-substrate structure includes forming a first compound semiconductor crystal layer made of a group III-V compound semiconductor on a Si...
5399522 Method of growing compound semiconductor  
A first monocrystalline group III-V compound semiconductor layer is formed on an Si substrate. The surface of the first monocrystalline group III-V compound semiconductor layer is polished. A...
5332681 Method of making a semiconductor device by forming a nanochannel mask  
The present invention provides a method for depositing a pattern of deposd material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the...
5279687 Preparing substrates by annealing epitaxial layers in the form of nesas and substrates so prepared  
In order to grow single crystal, solid state devices onto a mismatched substrate, a secondary substrate is obtained by growing an epilayer divided into mesas (21) onto the primary substrate. The...
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