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8138035 Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels  
A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are...
8017426 Color filter array alignment mark formation in backside illuminated image sensors  
A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color...
7998846 3-D integrated circuit system and method  
A semiconductor fabrication system and method are presented. A three dimensional multilayer integrated circuit fabrication method can include forming a first device layer and forming a second...
7989306 Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate  
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An...
7951659 Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively  
A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained...
7951639 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template  
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning ...
7906413 Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD  
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration...
7879697 Growth of low dislocation density Group-III nitrides and related thin-film structures  
Methods of growing Group-III nitride thin-film structures having reduced dislocation density are provided. Methods in accordance with the present invention comprise growing a Group-III nitride...
7875884 Hetero-crystalline structure and method of making same  
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
7863621 Thin film transistor  
A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is...
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots  
A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first...
7820501 Decoder for a stationary switch machine  
Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided which...
7807523 Sequential selective epitaxial growth  
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor man...
7791103 Group III nitride semiconductor substrate  
A Group III nitride semiconductor substrate is formed of a Group III nitride single crystal, and has a diameter of not less than 25.4 mm and a thickness of not less than 150 μm. The substrate ...
7790581 Semiconductor substrate with multiple crystallographic orientations  
A pair of semiconductor structures and a method for fabricating a semiconductor structure each utilize a semiconductor substrate having a first crystallographic orientation, and a dielectric layer...
7754587 Silicon deposition over dual surface orientation substrates to promote uniform polishing  
A semiconductor process and apparatus provide a planarized hybrid substrate (16) by selectively depositing an epitaxial silicon layer (70) to fill a trench (96), and then blanket depositing silicon...
7696032 Semiconductor device including a crystal semiconductor layer, its fabrication and its operation  
In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on...
7662704 Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device  
An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding...
7648853 Dual channel heterostructure  
Dual channel heterostructures comprising strained Si and strained Ge-containing layers are disclosed, along with methods for producing such structures. In preferred embodiments, a strain-relaxed...
7648889 Production method for device  
A production method for devices includes: a bonding process for placing circuit surfaces of other divided plural semiconductor chips onto circuit surfaces of semiconductor chips of a wafer and...
7642177 Method of manufacturing nanowire  
A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of...
7642179 Semiconductor substrate and manufacturing method for the same  
A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer...
7608530 Hetero-crystalline structure and method of making same  
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
7589002 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method  
An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and...
7572715 Selective epitaxy process with alternating gas supply  
In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a...
7560352 Selective deposition  
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the...
7413967 Yield improvement in silicon-germanium epitaxial growth  
A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer....
7413939 Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit  
A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating...
7396744 Method of forming a semiconductor thin film  
A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings...
7364976 Selective etch for patterning a semiconductor film deposited non-selectively  
A method to selectively etch, and hence pattern, a semiconductor film deposited non-selectively is described. In one embodiment, a carbon-doped silicon film is deposited non-selectively such that...
7364990 Epitaxial crystal growth process in the manufacturing of a semiconductor device  
First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other....
7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer  
A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different...
7300854 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method  
A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a...
7247528 Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques  
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a...
7230301 Single-crystal silicon semiconductor structure  
A resistor, a transistor, and a capacitor can be fabricated on a semiconductor wafer in a process that forms an isolated single-crystal region with precise dimensions. The isolated single-crystal...
7226825 Method of fabricating micro-chips  
A method of fabricating micro-chips, including: (a) providing a substrate; (b) forming a first single-crystal layer on a top surface of the substrate; (c) forming a second single-crystal layer on a...
7223802 High order silane composition, and method of forming silicon film using the composition  
It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints...
7186630 Deposition of amorphous silicon-containing films  
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of...
7087506 Method of forming freestanding semiconductor layer  
A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base...
7074685 Method of fabrication SiGe heterojunction bipolar transistor  
A method of fabricating a semiconductor device includes a SiGe(C) heterojunction bipolar transistor using a non-selective epitaxial growth where an insulating layer is formed on a substrate and a...
7067404 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization  
A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in...
6989230 Producing low k inter-layer dielectric films using Si-containing resists  
In a process of producing low k inter-layer dielectric film in an interconnect structure on a semiconductor body, the improvement of preventing resist poisoning effects, comprising: a) providing an...
6989316 Semiconductor device and method for manufacturing  
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a...
6982212 Method of manufacturing a semiconductor device  
In the method of manufacturing a semiconductor device (1) with a semiconductor body (2), a doped zone (3) is formed in the semiconductor body (2). The semiconductor body (2) has a crystalline...
6946370 Semiconductor crystal producing method  
In a separation layer removing process α, temperature in a reaction chamber (heat treatment temperature TX) is raised to about 1000° C. and a separation layer A is evaporated through thermal d...
6884699 Process and unit for production of polycrystalline silicon film  
A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region,...
6881635 Strained silicon NMOS devices with embedded source/drain  
A planar NFET on a strained silicon layer supported by a SiGe layer achieves reduced external resistance by removing SiGe material outside the transistor body and below the strained silicon layer...
6864158 Method of manufacturing nitride semiconductor substrate  
A main surface of a base substrate of sapphire is selectively formed an irregular region on the main surface. Then, a semiconductor layer of gallium nitride is grown to fill recessed portions in...
6858308 Semiconductor element, and method of forming silicon-based film  
The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal...
6828178 Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it  
A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of...
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