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7612379 |
Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer....
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7589002 |
Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and...
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7585752 |
Process for deposition of semiconductor films
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high...
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7583196 |
Method and system for detecting a body in a zone located proximate an interface
The invention concerns a method and a system for detecting a body ( 801 ) in a zone ( 802 ) located proximate an interface ( 803 ). The body is illuminated by an electromagnetic radiation ( 804 )...
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7572715 |
Selective epitaxy process with alternating gas supply
In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a...
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7569462 |
Directional crystallization of silicon sheets using rapid thermal processing
The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and...
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7560352 |
Selective deposition
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the...
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7557050 |
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy...
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7556977 |
Semiconductor manufacturing method and semiconductor laser device manufacturing method
There are provided preflow periods t 11 , t 12 in which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor),...
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7553468 |
Method for producing solid product
Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor...
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7538014 |
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline...
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7521341 |
Method of direct deposition of polycrystalline silicon
A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first...
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7514374 |
Method for manufacturing flat substrates
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer ( 19 ) deposited on a large-surface substrate, ( 15 ) before...
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7504324 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an...
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7476600 |
FET gate structure and fabrication process
The invention includes a method of fabricating a gate structure for a field effect transistor and the gate structure. The method includes providing a crystalline silicon substrate and epitaxially...
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7470602 |
Crystalline film and its manufacture method using laser
A workpiece object is prepared which has a thin film on the surface and made of amorphous material. A pulse laser beam is applied to the thin film, the pulse laser beam having an elongated beam...
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7432140 |
Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode...
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7419886 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Thermal treatment equipment and method for heat-treating
The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such...
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7413967 |
Yield improvement in silicon-germanium epitaxial growth
A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer....
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7413966 |
Method of fabricating polysilicon thin film transistor with catalyst
A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon...
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7393715 |
Manufacturing method for image pickup apparatus
In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer...
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7375005 |
Method for reclaiming and reusing wafers
Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a...
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7371665 |
Method for fabricating shallow trench isolation layer of semiconductor device
A method for fabricating an STI layer of a semiconductor device is disclosed, to improve the integration of the semiconductor device in a method of increasing a moat area for a gate line by...
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7368368 |
Multi-chamber MOCVD growth apparatus for high performance/high throughput
In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The...
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7368067 |
P-type zinc oxide semiconductor film and process for preparation thereof
A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained...
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7364976 |
Selective etch for patterning a semiconductor film deposited non-selectively
A method to selectively etch, and hence pattern, a semiconductor film deposited non-selectively is described. In one embodiment, a carbon-doped silicon film is deposited non-selectively such that...
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7354858 |
Film formation method and apparatus for semiconductor process
A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a...
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7344962 |
Method of manufacturing dual orientation wafers
Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a...
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7341910 |
Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate
This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a...
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7329591 |
Method for forming silicon-containing film and method for decreasing number of particles
A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD...
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7326623 |
Method of manufacturing display device
Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous...
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7315335 |
Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10% of thickness
A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to...
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7303981 |
Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same
A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and...
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7282384 |
Thermoelectric transducing material thin film, sensor device, and its manufacturing method
The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by...
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7279383 |
Liquid crystal display device and method of fabricating the same
There is disclosed a liquid crystal display device and a fabricating method thereof that reduce the number of processes and production cost. A liquid crystal display device and a fabricating method...
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7273799 |
Deposition over mixed substrates
Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages,...
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7268064 |
Method of forming polysilicon layer in semiconductor device
Disclosed herein is a method of forming a polysilicon film of a semiconductor device. Upon deposition process of a polysilicon film, the inflow of a gas is reduced to 150 sccm to 250 sccm to...
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7265036 |
Deposition of nano-crystal silicon using a single wafer chamber
Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and...
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7259081 |
Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit...
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7253032 |
Method of flattening a crystallized semiconductor film surface by using a plate
First laser light is irradiated (energy density of 400 to 500 mj/cm 2 ) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102 b having large...
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7247924 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion...
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7247535 |
Source/drain extensions having highly activated and extremely abrupt junctions
A method for making a transistor within a semiconductor wafer. The method may include etching a recess at source/drain extension locations 90 and depositing SiGe within the recess to form SiGe...
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7235466 |
Method of fabricating a polysilicon layer
A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an...
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7227186 |
Thin film transistor and method of manufacturing the same
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of...
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7223802 |
High order silane composition, and method of forming silicon film using the composition
It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints...
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7220670 |
Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and...
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7208696 |
Method of forming a polycrystalline silicon layer
A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon...
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7192852 |
Method for fabricating image display device
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits...
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7176069 |
Manufacture method of display device
It is an object of the present invention to reduce the consumption of materials for manufacturing a display device, simplify the manufacturing process and the apparatus used for it, and lower the...
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7172952 |
Polysilicon crystallizing method, method of fabricating thin film transistor using the same, and method of fabricating liquid crystal display thereof
A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having...
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