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7622370 |
Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at...
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7622369 |
Device isolation technology on semiconductor substrate
A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon,...
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7618882 |
Method for manufacturing semiconductor device and laser irradiation apparatus
It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a...
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7618852 |
Phase transition method of amorphous material using cap layer
The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the...
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7615502 |
Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a...
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7615499 |
Method for oxidizing a layer, and associated holding devices for a substrate
A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at...
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7611807 |
Method for forming poly-silicon film
In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam...
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7611577 |
Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial...
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7608529 |
Method for selective laser crystallization and display panel fabricated by using the same
A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and...
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7608528 |
Substrate cover, and charged particle beam writing apparatus and method
A substrate cover includes a frame-like member configured to be placed on a substrate which is to be written using a charged particle beam, and to have an outer perimeter dimension larger than a...
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7608527 |
Laser irradiation method and method for manufacturing crystalline semiconductor film
Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet...
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7598160 |
Method for manufacturing thin film semiconductor
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a...
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7589032 |
Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a...
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7588990 |
Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a...
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7585791 |
Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device
In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According...
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7582541 |
Wafer laser processing method
A wafer laser processing method for forming a groove along streets in a wafer by moving the wafer at a predetermined feed rate while a laser beam whose focal spot is elliptic is applied along the...
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7575985 |
Method of fabricating semiconductor device
In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization...
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7575958 |
Programmable fuse with silicon germanium
A programmable fuse and method of formation utilizing a layer of silicon germanium (SiGe) (e.g. monocrystalline) as a thermal insulator to contain heat generated during programming. The...
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7569439 |
Thin film semiconductor device, production process and information displays
A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of...
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7566625 |
Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a...
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7566617 |
Method for manufacturing semiconductor elemental device forming an amorphous high dielectric film and an amorphous silicon film
A base substrate is first prepared, and a high dielectric amorphous film composed of a high permittivity material is formed over the base substrate. Next, an amorphous silicon film is formed over...
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7563732 |
Method and apparatus for forming polycrystalline layer using laser crystallization
A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing...
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7563659 |
Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled...
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7560365 |
Method of semiconductor thin film crystallization and semiconductor device fabrication
A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer,...
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7553778 |
Method for producing a semiconductor device including crystallizing an amphorous semiconductor film
A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while...
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7553715 |
Crystallization method and apparatus thereof
A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and...
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7547616 |
Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid...
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7547593 |
Method of fabricating semiconductor device
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the...
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7541230 |
Method and apparatus for crystallizing semiconductor with laser beams
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
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7538014 |
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline...
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7534705 |
Method of manufacturing a semiconductor device
An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface....
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7534670 |
Semiconductor device and manufacturing method of the same
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
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7528023 |
Apparatus for crystallizing semiconductor with laser beams
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
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7521649 |
Laser processing apparatus and laser processing method
A laser processing apparatus is provided including: a laser generator generating a light beam; a branching means for branching out the light beam to a plurality of beams arranged at equal...
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7517774 |
Laser annealing method
In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams...
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7517773 |
Method of manufacturing a thin film transistor
A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an...
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7517620 |
Method for fabricating array substrate having color filter on thin film transistor structure for liquid crystal display device
A method for fabricating an array substrate having a color filter on a thin film transistor structure for a liquid crystal display device is disclosed in the present invention. The method for...
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7514305 |
Apparatus and methods for improving the intensity profile of a beam image used to process a substrate
Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to...
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7510920 |
Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film
Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More...
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7507645 |
Method of forming polycrystalline semiconductor layer and thin film transistor using the same
A method of forming a polycrystalline semiconductor layer includes forming a semiconductor layer of amorphous silicon on a substrate, forming a plurality of spot seeds in the semiconductor layer by...
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7498212 |
Laser annealing method and semiconductor device fabricating method
When the second harmonic of a YAG laser is irradiated onto semiconductor films, concentric-circle patterns are observed on some of the semiconductor films. This phenomenon is due to the...
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7492583 |
Portable computer having magnetic switch
A portable computer having a display part and a main part includes a magnetic piece installed in the display part, a Hall sensor installed in the main part, a switch circuit, and a control terminal...
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7491559 |
Low-temperature polysilicon display and method for fabricating same
A display panel comprising at least one display area and one peripheral circuit area having electronic components for driving the display components in the display area. The electronic components...
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7488670 |
Direct channel stress
An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming a strained channel region in semiconductor devices. Embodiments include forming a stressor...
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7488633 |
Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
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7482552 |
Laser crystallizing device and method for crystallizing silicon
A laser crystallizing device including a mask divided into two regions, having open parts of the same shape at complementary positions; and a light-shielding pattern selectively leaving one region...
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7482274 |
Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist...
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7482273 |
Transmissive dynamic plasma steering method for radiant electromagnetic energy
Radiant electromagnetic energy beam steering method achieved following antenna conversion from electrical current and voltage characterized signals to radiant wave characterized signals by way of...
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7482253 |
Fusing nanowires using in situ crystal growth
Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition....
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7479420 |
Laser optical apparatus
There is provided a structure for reducing optical loss in an optical apparatus (homogenizer) for making the intensity distribution of a laser beam uniform. In a multi-cylindrical lens (a glass...
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