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7622370 |
Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at...
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7619251 |
Laser crystallization method suppressing propagation of cracks forming a display device
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si...
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7618852 |
Phase transition method of amorphous material using cap layer
The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the...
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7615502 |
Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a...
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7612379 |
Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer....
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7608869 |
Thin film transistor and method of fabricating the same
A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer;...
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7608529 |
Method for selective laser crystallization and display panel fabricated by using the same
A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and...
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7608522 |
Method for fabricating a hybrid orientation substrate
A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second...
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7605029 |
Method of manufacturing semiconductor device
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of...
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7601618 |
Method for producing semi-conditioning material wafers by moulding and directional crystallization
Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an...
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7601565 |
Thin film transistor and method of fabricating the same
A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region....
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7575985 |
Method of fabricating semiconductor device
In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization...
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7569793 |
Sequential lateral solidification device and method of crystallizing silicon using the same
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality...
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7566625 |
Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a...
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7563698 |
Method for manufacturing semiconductor device
Method for manufacturing a semiconductor device including a transistor having a grooved gate structure and a transistor having a planar gate structure on the same substrate, in which, even when the...
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7563658 |
Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent...
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7560321 |
Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light...
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7557020 |
Method for fabricating thin film transistor using metal catalyst layer
A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may...
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7556993 |
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially...
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7553714 |
Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor
A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an...
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7550369 |
Method for fabricating low-defect-density changed orientation Si
The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first...
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7544591 |
Method of creating isolated electrodes in a nanowire-based device
Methods of creating isolated electrodes and integrating a nanowire therebetween each employ lateral epitaxial overgrowth of a semiconductor material on a semiconductor layer to form isolated...
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7544550 |
Method of fabricating semiconductor device and semiconductor fabricated by the same method
A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain...
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7538014 |
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline...
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7534714 |
Radial temperature control for lattice-mismatched epitaxy
Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with...
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7534704 |
Thin layer structure and method of forming the same
In a thin layer structure and a method of forming the same, a first preliminary insulation pattern is formed on a substrate and includes a first opening exposing the substrate. One or more...
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7528056 |
Low-cost strained SOI substrate for high-performance CMOS technology
A cost-effective and simple method of fabricating strained semiconductor-on-insulator (SSOI) structures which avoids epitaxial growth and subsequent wafer bonding processing steps is provided. In...
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7524740 |
Localized strain relaxation for strained Si directly on insulator
A method of forming a localized region of relaxed Si in a layer of strained Si arranged within a strained silicon directly on insulator (SSDOI) semiconductor substrate is provided by the invention....
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7524712 |
Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus
When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the...
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7521303 |
Method of crystallizing amorphous semiconductor thin film and method of fabricating poly crystalline thin film transistor using the same
A method of crystallizing an amorphous semiconductor thin film used for a thin film transistor (TFT) is provided. The method includes the steps of: forming first and second crystallization induced...
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7514306 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device, includes:
a) spraying a combusted gas onto a member containing a metal element, the combusted gas being obtained by combusting a mixed gas...
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7507648 |
Methods of fabricating crystalline silicon film and thin film transistors
A method by which solid phase crystallization (SPC) thermal budget for crystallizing an undoped (or a lightly doped) amorphous Si (a-Si) is significantly reduced. First, a composite layer structure...
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7507645 |
Method of forming polycrystalline semiconductor layer and thin film transistor using the same
A method of forming a polycrystalline semiconductor layer includes forming a semiconductor layer of amorphous silicon on a substrate, forming a plurality of spot seeds in the semiconductor layer by...
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7504325 |
Laser doping processing method and method for manufacturing semiconductor device
It is an object of the present invention to provide an easy doping method where concentration control is easy, where doping with respect to a large area can be practically conducted and which does...
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7501331 |
Low-temperature metal-induced crystallization of silicon-germanium films
The present invention provides for a low-temperature method to crystallize a silicon-germanium film. Metal-induced crystallization of a deposited silicon film can serve to reduce the temperature...
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7488633 |
Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
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7485553 |
Process for manufacturing a semiconductor device
A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a...
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7485552 |
Thin film transistor and method of fabricating the same
A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor...
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7482274 |
Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist...
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7482253 |
Fusing nanowires using in situ crystal growth
Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition....
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7476901 |
Poly-silicon thin film transistor array substrate and method for fabricating the same
A poly-silicon thin film transistor array substrate includes a gate line and a gate electrode over a substrate, a semiconductor layer having source/drain regions doped with impurity ions, a data...
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7476600 |
FET gate structure and fabrication process
The invention includes a method of fabricating a gate structure for a field effect transistor and the gate structure. The method includes providing a crystalline silicon substrate and epitaxially...
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7473621 |
Producing method for crystalline thin film
A method for producing a crystalline film by melting and resolidifying a film, characterized in preparing a film having a specific region and obtained either by (A) a step of forming a film in...
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7462517 |
Electro-optical device and semiconductor circuit
A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base...
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7459355 |
Drive circuit of active matrix device and manufacturing method thereof
A data holding control signal for each data line is supplied to a plurality of source followers that are connected together in parallel. The parallel-connected source followers are a combination of...
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7452791 |
Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by...
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7439116 |
Apparatus and method for forming polycrystalline silicon thin film
Apparatus and method for forming a polycrystalline silicon thin film by converting an amorphous silicon thin film into the polycrystalline silicon thin film using a metal are provided. The method...
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7435667 |
Method of controlling polysilicon crystallization
A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an...
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7435658 |
Method of manufacturing metal-oxide-semiconductor transistor
A method of manufacturing a MOS transistor is provided. A substrate having a gate structure thereon is provided. A first spacer is formed on the sidewall of the gate structure. A pre-amorphization...
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7432173 |
Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film
In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first...
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