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7622369 Device isolation technology on semiconductor substrate  
A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon,...
7601619 Method and apparatus for plasma processing  
A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a...
7588990 Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer  
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a...
7575947 Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition  
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the...
7557027 Method of producing microcystalline silicon germanium suitable for micromachining  
A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor...
7557019 Electromagnetic treatment in atmospheric-plasma coating process  
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
7521341 Method of direct deposition of polycrystalline silicon  
A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first...
7507644 Method of forming dielectric layer of flash memory device  
A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...
7501326 Method for forming isolation layer of semiconductor device  
A method for forming an isolation layer of a semiconductor device using a shallow trench isolation method is provided. The method includes: vertically etching a region of an insulating layer and a...
7462568 Method for forming interlayer dielectric film in semiconductor device  
Disclosed herein is a method for forming an interlayer dielectric film in a semiconductor device. The method comprises the steps of preparing a semiconductor substrate having a dielectric film and...
7442627 Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer  
A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at...
7439191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications  
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a...
7419887 Laser assisted nano deposition  
An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is...
7384828 Semiconductor film, semiconductor device and method of their production  
A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is...
7368367 Method for forming a semiconductor  
A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline...
7368317 Method of producing an N-type diamond with high electrical conductivity  
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially...
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7214600 Method to improve transmittance of an encapsulating film  
A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the...
7199027 Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen  
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained...
7192851 Semiconductor laser manufacturing method  
A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that...
7172933 Recessed polysilicon gate structure for a strained silicon MOSFET device  
A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features...
7045445 Method for fabricating semiconductor device by using PECYCLE-CVD process  
Disclosed is a method for fabricating a semiconductor device by using a PECYCLE-CVD process. The method includes the steps of feeding source gas into a process chamber for predetermined time within...
7041178 Method for low temperature bonding and bonded structure  
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface...
7001831 Method for depositing a film on a substrate using Cat-PACVD  
A non-Si non-C-based gas is heated by a thermal catalysis body provided in a gas introduction channel, and the heated non-Si non-C-based gas and a material-based gas comprising Si and/or C are...
6987055 Methods for deposition of semiconductor material  
The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface....
6979589 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof  
An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film...
6974762 Adhesion of carbon doped oxides by silanization  
A method of silanizing the surface of a low-k interlayer dielectric oxides (carbon doped oxides or organo-silicate glasses) to improve surface adhesion to adjacent thin film layers in damascene...
6959029 Apparatus for performing anastomosis  
A wide-slit lateral growth projection mask, projection system, and corresponding crystallization process are provided. The mask includes an opaque region with at least one a transparent slit in the...
6943097 Atomic layer deposition of metallic contacts, gates and diffusion barriers  
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention...
6931619 Apparatus for reshaping a patterned organic photoresist surface  
The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is...
6930025 Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device  
In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step...
6846728 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film  
By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities...
6803309 Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance  
A method for forming an adhesion/barrier liner with reduced fluorine contamination to improve adhesion and a specific contact resistance of metal interconnects including providing a semiconductor...
6800539 Thin film formation method  
In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into...
6794275 Process for forming a silicon-based film on a substrate using a temperature gradient across the substrate axis  
In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the...
6794274 Method for fabricating a polycrystalline silicon film  
A method for fabricating polycrystalline silicon film on a substrate adds a semitransparent film between the substrate and the silicon film. When the laser irradiates the silicon film, the...
6774018 Barrier coatings produced by atmospheric glow discharge  
A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric...
6759267 Method for forming a phase change memory  
A method of programming a first memory cell in an array of at least four memory cells in a semiconductor device, each memory cell including a polysilicon gate, first and second spaced-apart...
6754552 Control apparatus for plasma utilizing equipment  
A plurality of measuring devices to obtain numerical information necessary for control in process control of plasma utilizing equipment are connected to a first communication link, a plurality...
6716725 Plasma processing method and semiconductor device  
A wafer W is placed on a lower electrode 108 provided inside a processing chamber 102 of a CVD apparatus 100 and is heated to achieve a temperature equal to or greater than 350° C. and lower...
6689668 Methods to improve density and uniformity of hemispherical grain silicon layers  
Various methods are provided of forming capacitor electrodes for integrated circuit memory cells in which out-diffusion of dopant from doped silicon layers is controlled by deposition of barrier...
6680262 Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface  
A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD...
6677222 Method of manufacturing semiconductor device with polysilicon film  
A first layer made of polysilicon is formed on the surface of an underlying substrate. The surface of the first layer is exposed to an environment which etches silicon oxide. If the surface of the...
6653212 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device  
A thin film forming apparatus S having a vacuum chamber 1 , a substrate 10 , a thermal catalyst 5 , and a heating means 5 a for heating this thermal catalyst 5 , wherein a gas introduction...
6649495 Manufacturing method of semiconductor device  
The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are...
6632726 Film formation method and film formation apparatus  
To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O 2 gas and SiH 4 gas are introduced into the processing...
6566159 Method of manufacturing tandem thin-film solar cell  
A method of manufacturing a tandem thin-film solar cell is provided, the solar cell including a plurality of photoelectric conversion units stacked on a substrate, the photoelectric conversion...
6562702 Semiconductor device and method and apparatus for manufacturing semiconductor device  
Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low...
6531654 Semiconductor thin-film formation process, and amorphous silicon solar-cell device  
In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take...
6503816 Thin film formation by inductively-coupled plasma CVD process  
A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus...
Matches 1 - 50 out of 242 1 2 3 4 5 >