|
Match
|
Document |
Document Title |
|
|
7632742 |
Substrate for growing Pendeo epitaxy and method of forming the same
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate...
|
|
|
7629244 |
Method of fabricating a single electron transistor having memory function
A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially...
|
|
|
7625811 |
Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures
A method according to the invention enables first and second active zones to be produced on a front face of a support, which said zones are respectively formed by first and second monocrystalline...
|
|
|
7625798 |
Method of producing semiconductor memory
A semiconductor memory includes a plurality of memory cell transistors each having a laminated gate. A method of producing the semiconductor memory includes the steps of: forming a plurality of...
|
|
|
7621998 |
Single crystalline gallium nitride thick film having reduced bending deformation
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
|
|
|
7618881 |
Thin-film transistor and manufacturing method thereof
A method for forming a thin-film transistor on an insulating substrate includes the steps of: forming a non-single-crystal semiconductor thin film on the insulating substrate; forming a gate...
|
|
|
7618865 |
Method in the fabrication of a monolithically integrated vertical device on an SOI substrate
A method in the fabrication of a monolithically integrated vertical device on an SOI substrate comprises the steps of providing an SOI substrate including, from bottom to top, a silicon bulk...
|
|
|
7615823 |
SOI substrate and method of manufacturing the same
The SOI substrate includes a supporting substrate, an insulating layer (first insulating layer), another insulating layer (second insulating layer), and a silicon layer (silicon active layer). On a...
|
|
|
7615471 |
Method for producing a tensioned layer on a substrate, and a layer structure
The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and;...
|
|
|
7615472 |
Method for manufacturing nitride semiconductor substrate
A method for manufacturing a nitride semiconductor substrate includes the steps of growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a...
|
|
|
7611974 |
Multilayer structure and fabrication thereof
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate...
|
|
|
7611928 |
Method for producing a substrate
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer,...
|
|
|
7611930 |
Method of manufacturing display device
In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an...
|
|
|
7608506 |
Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body...
|
|
|
7608525 |
Method for manufacturing nitride semiconductor substrate
A method for manufacturing a nitride semiconductor substrate comprises the steps of: growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a...
|
|
|
7605447 |
Highly manufacturable SRAM cells in substrates with hybrid crystal orientation
The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down...
|
|
|
7605012 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same
A light emitting device includes a silicon substrate ( 1 ), a silicon nitride film ( 2 ) formed on the surface of the silicon substrate ( 1 ), at least an n-type layer ( 3 ), ( 4 ) and a p-type...
|
|
|
7601568 |
MOS transistor and method for producing a MOS transistor structure
A MOS transistor, and a method for producing the same, is provided with a source region, a gate-region, a drain region, and a drift region in an SOI wafer. The SOI-wafer has a carrier layer, which...
|
|
|
7601620 |
Methods for fabricating nanocoils
Improved nanocoils, systems and methods for fabricating nanocoils. Embodiments enable wet etching techniques for releasing coiling arm structures and forming nanocoils. A method for fabricating...
|
|
|
7601617 |
Semiconductor wafer and manufacturing method thereof
The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral...
|
|
|
7592239 |
Flexible single-crystal film and method of manufacturing the same
The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a...
|
|
|
7592208 |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor apparatus and photomask
A method for manufacturing a semiconductor substrate, includes: forming a first semiconductor layer on a semiconductor base material; forming a second semiconductor layer on the first semiconductor...
|
|
|
7592209 |
Integration of a floating body memory on SOI with logic transistors on bulk substrate
A method and the resultant memory is described for forming an array of floating body memory cells and logic transistors on an SOI substrate. The floating bodies for the cells are formed over the...
|
|
|
7592198 |
Method for making a photovoltaic cell based on thin-film silicon
The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—)...
|
|
|
7588952 |
Method of fabricating vertical structure LEDs
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor...
|
|
|
7585743 |
Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method
A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps:
forming...
|
|
|
7582547 |
Method for junction formation in a semiconductor device and the semiconductor device made thereof
Devices and methods for junction formation in manufacturing a semiconductor device are disclosed. The devices have shallow junction depths far removed from end-of range defects. The method...
|
|
|
7582506 |
Precursor containing copper indium and gallium for selenide (sulfide) compound formation
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell...
|
|
|
7582540 |
Method for manufacturing SOI wafer
This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the...
|
|
|
7579654 |
Semiconductor on insulator structure made using radiation annealing
Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI...
|
|
|
7579221 |
Conversion of an SOI design layout to a bulk design layout
An SOI design layout is converted to a bulk design layout. According to a method of converting a first semiconductor design layout based on an Silicon-on-Insulator (SOI) process to a second...
|
|
|
7560358 |
Method of preparing active silicon regions for CMOS or other devices
A method of preparing active silicon regions for CMOS or other devices includes providing a structure including a silicon substrate ( 210, 410 ) having formed thereon first and second silicon...
|
|
|
7557018 |
Element fabrication substrate
A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer...
|
|
|
7557019 |
Electromagnetic treatment in atmospheric-plasma coating process
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
|
|
|
7553545 |
Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor...
|
|
|
7553709 |
MOSFET with body contacts
A semiconductor structure includes a metal oxide semiconductor field effect transistor that includes a body contact region that extends from body region located beneath a channel region that...
|
|
|
7553726 |
Method of fabricating nonvolatile memory device
A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally...
|
|
|
7550758 |
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
A method and resulting high electron mobility transistor comprised of a substrate and a relaxed silicon-germanium layer formed over the substrate. A dopant layer is formed within the relaxed...
|
|
|
7550330 |
Deep junction SOI MOSFET with enhanced edge body contacts
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the...
|
|
|
7544585 |
Structure of strained silicon on insulator and method of manufacturing the same
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO 2 layer formed on the insulating...
|
|
|
7537981 |
Silicon on insulator device and method of manufacturing the same
An isolated semiconductor device and method for producing the isolated semiconductor device in which the device includes a silicon-on-insulator (SOI) device formed on a substrate. A dielectric film...
|
|
|
7537983 |
MOSFET
In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first...
|
|
|
7538390 |
Semiconductor device with PMOS and NMOS transistors
A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS...
|
|
|
7538013 |
Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrate
There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a...
|
|
|
7534705 |
Method of manufacturing a semiconductor device
An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface....
|
|
|
7534668 |
Method of fabricating etch-stopped SOI back-gate contact
The buried oxide region has a layer added which etches selectively with respect to oxide, allowing the contacts to a gate or to a back gate to be created without overetching into the buried oxide...
|
|
|
7531879 |
Method and resultant structure for floating body memory on bulk wafer
A method for making floating body memory cells from a bulk substrate. A thin silicon germanium and overlying silicon layers are formed on the bulk substrate. Anchors and a bridge are formed to...
|
|
|
7531454 |
Method and apparatus of fabricating liquid crystal display device
A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method...
|
|
|
7528056 |
Low-cost strained SOI substrate for high-performance CMOS technology
A cost-effective and simple method of fabricating strained semiconductor-on-insulator (SSOI) structures which avoids epitaxial growth and subsequent wafer bonding processing steps is provided. In...
|
|
|
7524739 |
Method of improving a surface of a semiconductor substrate
The invention relates to a method of improving a surface of a semiconductor substrate which is at least partially made of silicon. Defects present in or on the semiconductor substrate can be really...
|