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8183879 Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source  
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are...
8183086 Diamond GaN devices and associated methods  
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer...
8183098 SOI device with contact trenches formed during epitaxial growing  
A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and...
8178426 Method for manufacturing a structure of semiconductor-on-insulator type  
A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates...
8174069 Power semiconductor device and a method of forming a power semiconductor device  
A power semiconductor device has a top surface and an opposed bottom surface below a part of which is a thick portion of semiconductor substrate. At least a portion of a drift region of the device...
8173495 Semiconductor on insulator  
A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on...
8173497 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same  
A semiconductor device having a cell region and a peripheral region includes an silicon on insulator (SOI) substrate having a stack structure of a silicon substrate, a buried insulation layer, and...
8168518 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device  
A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption...
8168481 Method of manufacturing SOI substrate  
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of...
8168516 Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate  
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
8163582 Method for fabricating a light emitting diode chip including etching by a laser beam  
A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are...
8164007 Conductive elastomeric seal and method of fabricating the same  
Method for fabricating a conductive elastomeric seal, which includes a set of springs plated with an electrically conductive material. Initially, the set of springs can be held in a z-axis position...
8148243 Zero capacitor RAM with reliable drain voltage application and method for manufacturing the same  
The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a...
8148242 Oxidation after oxide dissolution  
A method for manufacturing a SeOI substrate that includes a thin working layer made from one or more semiconductor material(s); a support layer; and a thin buried oxide layer between the working...
8143114 System and method for source/drain contact processing  
System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain...
8143145 Method and arrangement for producing an N-semiconductive indium sulfide thin layer  
A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous...
8138069 Substrate pretreatment for subsequent high temperature group III depositions  
Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One...
8138548 Thin film transistor array substrate and method for manufacturing the same  
A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer...
8129208 n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof  
This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN...
8129260 Semiconductor substrates having low defects and methods of manufacturing the same  
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group...
8128756 Technique for the growth of planar semi-polar gallium nitride  
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar...
8124431 Nitride semiconductor laser device and method of producing the same  
A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride...
8124463 Local bottom gates for graphene and carbon nanotube devices  
Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the...
8110464 SOI protection for buried plate implant and DT bottle ETCH  
An SOI layer has an initial trench extending therethrough, prior to deep trench etch. An oxidation step, such as thermal oxidation is performed to form a band of oxide on an inner periphery of the...
8110483 Forming an extremely thin semiconductor-on-insulator (ETSOI) layer  
Solutions for forming an extremely thin semiconductor-on-insulator (ETSOI) layer are disclosed. In one embodiment, a method includes providing a wafer including a plurality of...
8110482 Miscut semipolar optoelectronic device  
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate,...
8110486 Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer  
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating...
8110484 Conductive nitride semiconductor substrate and method for producing the same  
A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width...
8105919 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N  
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a...
8101021 Flow method and reactor for manufacturing nanocrystals  
A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
8093139 Method for fabrication of aligned nanowire structures in semiconductor materials for electronic, optoelectronic, photonic and plasmonic devices  
The present invention describes a method of fabrication of nanocomposite semiconductor materials comprising aligned arrays of metal or semiconductor nanowires incorporated into semiconductor...
8093115 Tuning of SOI substrate doping  
A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk...
8093109 Method for forming semiconductor thin film and method for manufacturing electronic device  
A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a...
8093136 Method for manufacturing SOI substrate  
A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by...
8088674 Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes  
Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the...
8080468 Methods for fabricating passivated silicon nanowires and devices thus obtained  
Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that...
8080451 Fabricating semiconductor structures  
Solutions for fabricating a semiconductor structure. One embodiment includes a method for fabricating a semiconductor structure, the method including: forming a first dielectric structure on a...
8076221 Fabrication method of pixel structure and thin film transistor  
A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned...
8076217 Controlled quantum dot growth  
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of...
8076220 Fabrication method for device structure having transparent dielectric substrate  
A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of...
8062962 Method for enhancing the reliability of a P-channel semiconductor device and a P-channel semiconductor device made thereof  
A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric...
8058157 FinFET structure with multiply stressed gate electrode  
A semiconductor structure and its method of fabrication include a semiconductor fin located over a substrate. A gate electrode is located over the semiconductor fin. The gate electrode has a first...
8053838 Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)  
A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first...
8053810 Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same  
A semiconductor substrate containing a single crystalline group IV semiconductor is provided. A single crystalline lattice mismatched group IV semiconductor alloy layer is epitaxially grown on a...
8053837 Semiconductor device  
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film...
8053303 SOI body contact using E-DRAM technology  
A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer,...
8053331 Flexible display substrates  
Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate,...
8048786 Method for fabricating single-crystalline substrate containing gallium nitride  
The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing...
8043924 Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same  
In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first...
8043929 Semiconductor substrate and method for production thereof  
Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a...
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