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7635631 |
Semiconductor device and manufacturing method for the same
In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact...
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7629232 |
Semiconductor storage device and manufacturing method thereof
A non-volatile semiconductor storage device having a high-dielectric-constant insulator and a manufacturing method thereof suitable for miniaturization are disclosed. According to one aspect of the...
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7625786 |
Semiconductor device and method of manufacturing the same
Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared...
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7618879 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices
This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is...
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7615393 |
Methods of forming multi-doped junctions on a substrate
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first...
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7611971 |
Method of removing residual contaminants from an environment
A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting...
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7611972 |
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier...
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7572663 |
Method for manufacturing CMOS image sensor
A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area,...
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7566957 |
Support device with discrete getter material microelectronic devices
The specification teaches a system for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and...
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7544265 |
Method of fabricating a release substrate
The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release...
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7501330 |
Methods of forming a high conductivity diamond film and structures formed thereby
A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate...
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7494851 |
Thin film transistor array substrate and method for manufacturing the same
A thin film transistor array substrate and a method for manufacturing the same is disclosed, in which it is possible to prevent mobile ions contained in a substrate from penetrating into a...
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7488670 |
Direct channel stress
An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming a strained channel region in semiconductor devices. Embodiments include forming a stressor...
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7485551 |
Semiconductor-on-insulator type heterostructure and method of fabrication
The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of...
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7473614 |
Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop...
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7459379 |
Method for manufacturing semiconductor device
When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain...
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7456084 |
Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer
There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the...
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7452788 |
Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L 1 ≦L 2 ≦L 1 ...
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7419886 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Thermal treatment equipment and method for heat-treating
The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such...
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7416928 |
Manufacturing method of semiconductor device
An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an...
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7407870 |
Method for manufacturing semiconductor device
The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to...
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7393761 |
Method for fabricating a semiconductor device
A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a...
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7393762 |
Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate
A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and...
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7348188 |
Method for analyzing metal element on surface of wafer
Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the...
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7332416 |
Methods to manufacture contaminant-gettering materials in the surface of EUV optics
Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface...
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7309865 |
Electronic device having infrared sensing elements
An electronic device according to the present invention includes: a cavity, which is surrounded with a cavity wall portion and which has a reduced pressure; a gettering thin film, which is arranged...
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7294561 |
Internal gettering in SIMOX SOI silicon substrates
The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a...
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7250356 |
Method for forming metal silicide regions in an integrated circuit
A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a...
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7247561 |
Method of removing residual contaminants from an environment
A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting...
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7232742 |
Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
In a method of crystallizing a semiconductor film by introducing a metallic element that promotes crystallization, a gettering thereafter is effectively performed. A material film having a high...
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7208380 |
Interface improvement by stress application during oxide growth through use of backside films
The present invention provides, in one aspect, a method of fabricating a gate oxide layer on a microelectronics substrate. This embodiment comprises forming a stress inducing pattern on a backside...
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7199027 |
Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained...
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7199057 |
Method of eliminating boron contamination in annealed wafer
A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed...
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7084048 |
Process for metallic contamination reduction in silicon wafers
A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon...
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7075002 |
Thin-film photoelectric conversion device and a method of manufacturing the same
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon...
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7052943 |
Method of manufacturing a semiconductor device
A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal...
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7045442 |
Method of separating a release layer from a substrate comprising hydrogen diffusion
The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to...
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7037808 |
Method of forming semiconductor constructions
The invention includes a semiconductor construction. The construction has a semiconductor material die with a front surface, a back surface in opposing relation to the front surface, and a...
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7026197 |
Method of fabricating semiconductor device
There is disclosed a method of fabricating TFTs using a silicon film crystallized with the aid of nickel. The nickel is removed from the crystallized silicon film. The method starts with...
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7022589 |
Thermal treatment equipment and method for heat-treating
The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such...
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6982208 |
Method for producing high throughput strained-Si channel MOSFETS
A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using...
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6890842 |
Method of forming a thin film transistor
A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material...
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6858094 |
Silicon wafer and silicon epitaxial wafer and production methods therefor
The present invention provides a silicon wafer having a DZ layer near a surface and an oxide precipitate layer in a bulk portion, wherein interstitial oxygen concentrations of the DZ layer, the...
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6852371 |
Metal processing for impurity gettering in silicon
A method is provided for gettering impurities from silicon wafers and devices to improve the quality of the material and the device performance. The wafer or the device is coated on the back-side...
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6830991 |
Method of manufacturing a semiconductor device including a gettering operation
A gettering layer for capturing heavy metal impurities is formed on a wafer back surface. Immediately before formation of a metal wiring layer, a semiconductor device is subjected to first heat...
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6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices
A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and...
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6809011 |
Adjusting of defect profiles in crystal or crystalline-like structures
The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber....
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6803242 |
Evaluation method of IG effectivity in semiconductor silicon substrates
In a conventional evaluation method of IG effectivity on Cu in semiconductor silicon substrates, it is required to actually conduct the device process, or a great deal of time, manpower and...
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6800538 |
Semiconductor device fabrication method and semiconductor fabrication control method
The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10 , the method further comprises, before the step of forming the...
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6767782 |
Manufacturing method of semiconductor device
Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved. By forming an insulating film on the back of a...
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