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7615470 Method of manufacturing gallium nitride semiconductor  
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and...
7601541 Method for detecting Cu concentration of silicon substrate  
To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for...
7592235 Semiconductor device including semiconductor memory element and method for producing same  
A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the...
7582540 Method for manufacturing SOI wafer  
This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the...
7563693 Method for manufacturing semiconductor substrate and semiconductor substrate  
A method for manufacturing a semiconductor substrate comprises the steps of: forming a gate oxide film as an insulating layer on the surface of a semiconductor substrate; implanting boron ions for...
7524713 Manufacturing method of semiconductor device  
A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal...
7518196 Field effect transistor with narrow bandgap source and drain regions and method of fabrication  
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of...
7507640 Method for producing silicon wafer  
A method for producing a silicon wafer, comprising performing an activation of metallic impurities by irradiating laser light on the metallic impurities constituting contaminants in the silicon...
7501329 Wafer gettering using relaxed silicon germanium epitaxial proximity layers  
One aspect of this disclosure relates to a method for creating proximity gettering sites in a semiconductor wafer. In various embodiments of this method, a relaxed silicon germanium region is...
7485551 Semiconductor-on-insulator type heterostructure and method of fabrication  
The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of...
7473620 Process for adjusting the strain on the surface or inside a substrate made of a semiconductor material  
This invention relates to a process for adjusting the strain in a strained layer on a substrate. The process steps include identifying one or more regions of the strained layer wherein the strain...
7452742 Solid-state imaging device, camera and method of producing the solid-state imaging device  
To provide a back-illuminated solid-state imaging device able to suppress a crystal defect caused by a metal contamination in a process and to suppress a dark current to improve quantum efficiency,...
7419886 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Thermal treatment equipment and method for heat-treating  
The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such...
7407871 Method for passivation of plasma etch defects in DRAM devices  
A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously...
7407867 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate  
A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that...
7405131 Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor  
The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the...
7397110 High resistance silicon wafer and its manufacturing method  
A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from...
7387952 Semiconductor substrate for solid-state image pickup device and producing method therefor  
A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a...
7364987 Method for manufacturing semiconductor device  
In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is...
7332416 Methods to manufacture contaminant-gettering materials in the surface of EUV optics  
Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface...
7332385 Method of manufacturing a semiconductor device that includes gettering regions  
A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device)...
7329590 Method for depositing nanolaminate thin films on sensitive surfaces  
The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The...
7323398 Method of layer transfer comprising sequential implantations of atomic species  
A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate...
7320931 Interfacial layer for use with high k dielectric materials  
Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the...
7297573 Methods and apparatus for particle reduction in MEMS devices  
A method for assembling a micro-electromechanical system (MEMS) device that includes a micro-machine is described. The method comprises forming the micro-machine on a die, the die having a top...
7294561 Internal gettering in SIMOX SOI silicon substrates  
The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a...
7288206 High-purity alkali etching solution for silicon wafers and use thereof  
A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution...
7269885 Method of manufacturing a piezoelectric vibrator  
A method of manufacturing a piezoelectric vibrator comprises providing a piezoelectric vibrator piece inside a hermetic container. A gettering metal film is formed inside the hermetic container on...
7202124 Strained gettering layers for semiconductor processes  
A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer...
7199057 Method of eliminating boron contamination in annealed wafer  
A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed...
7195990 Process for producing a photoelectric conversion device that includes using a gettering process  
A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which...
7166505 Method for making a semiconductor device having a high-k gate dielectric  
A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant...
7164187 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device  
Provided are a semiconductor and semiconductor substrate exhibiting low resistance on the substrate side while exhibiting high resistivity in an epitaxially grown layer formed thereover; a method...
7155803 Method of manufacturing a sensor element having integrated reference pressure  
A pressure sensor includes a pressure sensor house assembly which contains a reference cavity, in which a vacuum exists, and a getter capable of being thermally activated. The getter is activated...
7151060 Device and method for thermally treating semiconductor wafers  
A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive...
7135351 Method for controlling of thermal donor formation in high resistivity CZ silicon  
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer...
7135386 Process for fabricating a semiconductor device  
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on...
7129120 Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semiconductor film through a barrier film  
In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by 103 on the surface of an amorphous silicon film 102 . Then a crystalline silicon film 104 is...
7112509 Method of producing a high resistivity SIMOX silicon substrate  
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the...
7098148 Method for heat treating a semiconductor wafer  
A method for heat treatment of a semiconductor wafer placed on a support. The method includes subjecting the wafer to a heat treatment with a slow temperature rise from an initial temperature to a...
7091110 Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer  
A technique, where a semiconductor film having a crystal structure is obtained using a metal element that helps crystallization of the semiconductor film, then that metal element remained in the...
7087518 Method of passivating and/or removing contaminants on a low-k dielectric/copper surface  
One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with...
7071079 Epitaxial wafer and a method for producing it  
The present invention provides an epitaxial wafer wherein a silicon epitaxial layer is formed on a surface of a silicon single crystal wafer in which nitrogen is doped, and a density of oxide...
7067433 Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment  
A method of reducing fluorine contamination on a integrated circuit wafer surface is achieved. The method comprises placing an integrated circuit wafer on a cathode stage. The integrated circuit...
7045444 Method of manufacturing semiconductor device that includes selectively adding a noble gas element  
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×10 20 /cm 3 or higher which hinders...
7029991 Method for making a SOI semiconductor substrate with thin active semiconductor layer  
The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating...
6998353 Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers  
The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention,...
6995075 Process for forming a fragile layer inside of a single crystalline substrate  
Process for forming a fragile layer inside of a single crystalline substrate near one of the substrate surfaces. The fragile layer contains hydrogen mostly in form of hydrogen platelets oriented in...
6991997 Semiconductor film, semiconductor device and method for manufacturing same  
Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for...
6962858 Method for reducing free surface roughness of a semiconductor wafer  
The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a...
Matches 1 - 50 out of 241 1 2 3 4 5 >