Patents in Class 438/47

Matches 1 - 50 out of 702

Match	Document	Document Title
1	8183557	(Al,In,Ga,B)N device structures on a patterned substrate A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1−xN and InyGa1−yN where 0
2	8183065	LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate...
3	8178378	Method of manufacturing vertical nitride semiconductor light emitting diode A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode;...
4	8178870	Organic electroluminescence element An organic electroluminescence element includes an anode and a transparent electrode cathode. An organic luminescent layer is located between the anode and the cathode. An electron injection layer...
5	8179938	Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the...
6	8178370	Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
7	8173469	Fabrication method of light emitting device Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a...
8	8173458	Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
9	8168455	Method for manufacturing light emitting diode A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type...
10	8168460	Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group...
11	8164104	Light emitting element array and image forming apparatus A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are...
12	8163581	Semiconductor and optoelectronic devices Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.
13	8164105	Light emitting device and method for fabricating the same Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive...
14	8153456	Bifacial solar cell using ion implantation An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
15	8148716	Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the...
16	8138003	Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on...
17	8129711	Nitride semiconductor light emitting device and fabrication method thereof The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same...
18	8128756	Technique for the growth of planar semi-polar gallium nitride A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar...
19	8124470	Strained thin body semiconductor-on-insulator substrate and device A method of forming a strained, semiconductor-on-insulator substrate includes forming a second semiconductor layer on a first semiconductor substrate. The second semiconductor is lattice matched to...
20	8124430	*WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST* Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
21	8124432	Nitride semiconductor optical element and manufacturing method thereof In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In...
22	8119428	*WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST* Method of manufacturing nitride semiconductor light emitting device An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is...
23	8119429	Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by...
24	8115224	Light emitting device A light emitting device That includes a first photonic crystal structure having a reflective layer and non-metal pattern elements on the reflective layer, a second conductive semiconductor layer on...
25	8115199	Electroluminescent devices An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge...
26	8110851	Nitride-based semiconductor device and method for fabricating the same A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on...
27	8110420	Light emitting element array A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate;...
28	8110425	Laser liftoff structure and related methods Light-emitting devices, and related components, systems, and methods associated therewith are provided.
29	8101443	LEDs using single crystalline phosphor and methods of fabricating same Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs...
30	8097502	Semiconductor light emitting device and method of manufacturing the same Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two...
31	8088637	Method of manufacturing a semiconductor device including a superlattice strain relief layer A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN...
32	8084281	Semiconductor substrate, electronic device, optical device, and production methods therefor The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III...
33	8080833	Thick pseudomorphic nitride epitaxial layers In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN,...
34	8080484	Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element...
35	8076165	Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a...
36	8071410	Multi spectral sensor A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second...
37	8071409	Fabrication method of light emitting diode A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped...
38	8067787	Semiconductor electronic device A semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer in which a first...
39	8067257	Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference ...
40	8067255	Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and...
41	8053264	Photoelectrochemical etching of P-type semiconductor heterostructures A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be...
42	8048701	Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a...
43	8048703	Light emitting devices with inhomogeneous quantum well active regions A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation...
44	8048702	Method of fabricating nitride-based semiconductor optical device In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium...
45	8044417	Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light...
46	8044383	Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting...
47	8039359	Method of forming low capacitance ESD device and structure therefor In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
48	8039280	Light emitting diode and method of fabricating the same The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer...
49	8030640	Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a...
50	8030679	Nitride semiconductor light emitting device and fabrication method therefor Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer...

Matches 1 - 50 out of 702

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