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7589257 |
Genes for enhancing nitrogen utilization efficiency in crop plants
The invention provides isolated NUE (nitrogen utilization efficiency) nucleic acids and their encoded proteins. The present invention provides methods and compositions relating to altering nitrogen...
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7465661 |
High aspect ratio microelectrode arrays
A method of electroplating a metal into a plurality of channels within an insulating material includes mounting the material to a cathode; placing the cathode into an electroplating solution...
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7301239 |
Wiring structure to minimize stress induced void formation
A wiring structure with improved resistance to void formation and a method of making the same are described. The wiring structure has a first conducting layer that includes a large area portion...
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7232771 |
Method and apparatus for depositing charge and/or nanoparticles
A method and apparatus for use in depositing electrical charge and/or nanoparticles is provided. A stamping process is used in which a stamp having a flexible layer such as a flexible semiconductor...
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7148105 |
Method for forming polysilicon floating gate
A floating gate memory cell comprises a substrate with a drain and a source separated by a channel, a floating gate separated from the channel by a first insulation layer, and a control gate...
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7026225 |
Semiconductor component and method for precluding stress-induced void formation in the semiconductor component
A semiconductor component having a feature suitable for inhibiting stress induced void formation and a method for manufacturing the semiconductor component. A semiconductor substrate is provided...
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6933591 |
Electrically-programmable integrated circuit fuses and sensing circuits
Programmable fuses for integrated circuits are provided. The fuses may be based on polysilicon or crystalline silicon fuse links coated with silicide or other conductive thin films. Fuses may be...
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6881594 |
Method of using scatterometry for analysis of electromigration, and structures for performing same
The present invention is generally directed to various methods of using scatterometry for analysis of electromigration. In one illustrative embodiment, the method comprises forming a grating...
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6867056 |
System and method for current-enhanced stress-migration testing of interconnect
For testing for stress-migration failure of interconnect, an interconnect test structure is formed with a first feeder line coupled to a test line by a first no-flux structure, and with a second...
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6844245 |
Method of preparing a self-passivating Cu laser fuse
A method of forming a semiconductor device, such as a self-passivating fuse, includes patterning an opening in a dielectric to form a fuse. A seed-layer of a copper-alloy is deposited in the...
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6784000 |
Method for measurement of electromigration in semiconductor integrated circuits
Electromigration testing is accelerated in the batch fabrication of semiconductor integrated circuits by forming test structures during the metal deposition phase of the batch fabrication process....
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6777314 |
Method of forming electrolytic contact pads including layers of copper, nickel, and gold
A method of forming an electrical contact on a surface of a substrate. A first layer of a first electrically conductive material is formed on the surface of the substrate, where the first layer is...
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6624499 |
System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
The present invention provides a system, apparatus and method of programming via electromigration. A semiconductor fuse which includes a cathode and an anode coupled by a fuse link having an...
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6593213 |
Synthesis of layers, coatings or films using electrostatic fields
Systems and methods are described for synthesis of films, coatings or layers using electrostatic fields. A method includes applying an electrostatic field across a first precursor layer that is...
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6548377 |
Method for forming a line of semiconductor device
A method for forming a line of a semiconductor device is provided, which improves the life span of the line and its reliability by improving resistance to electromigration (EM). The method for...
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6513000 |
Simulation method of wiring temperature rise
A heat capacity C 1 is obtained by conducting two-dimensional thermal analysis simulation to the cross-section of a wiring. Next, based on one-dimensional approximate equation of θ 0 =(Q 0 /2)...
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6417053 |
Fabrication method for a silicon nitride read-only memory
A fabrication method for a silicon nitride read-only memory is described. A silicon nitride read-only memory and a grounding doped region are formed in the substrate. A contact is formed on the...
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6362079 |
Semiconductor device and method of anodization for the semiconductor device
A first p-type silicon layer ( 3 ) is formed as a buried layer in a p-type single crystal silicon substrate ( 2 ), and an n-type silicon layer ( 4 ) is formed on the upper side of the silicon...
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6306732 |
Method and apparatus for simultaneously improving the electromigration reliability and resistance of damascene vias using a controlled diffusivity barrier
An apparatus for improving electromigration reliability and resistance of a single- or dual-damascene via includes an imperfect barrier formed at the bottom of the via, and a stronger barrier...
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6156626 |
Electromigration bonding process and system
A process and system for connecting a semiconductor chip to a substrate is provided. The process includes providing the substrate that is configured to receive the semiconductor chip that has a...
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6136619 |
Method for measuring electromigration-induced resistance changes
A method for measuring resistance changes is described to study electromigration induced failures in conductive patterns. This method can provide a basis for lifetime predictions based on low value...
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6136669 |
Mobile charge immune process
A semi conductor manufacturing process including uniform negative polarity wafer charging to remove or immobilize alkali ions such that the device becomes immune to their presence. The wafer is...
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6072945 |
System for automated electromigration verification
An automated apparatus detects electromigration violations in an integrated circuit design. Starting from the lowest hierarchy of the design so far completed, the parasitic (resistance and...
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5963831 |
Method of making an interconnect structure employing equivalent resistance paths to improve electromigration resistance
A method of fabricating an interconnect structure having improved electromigration resistance. Two conductive lines are formed over a substrate and isolated by a dielectric layer. A contact/via...
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5963729 |
Method for automated electromigration verification
An automated method detects electromigration violations in an integrated circuit design. Starting from the lowest hierarchy of the design so far completed, the parasitic (resistance and...
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5959360 |
Interconnect structure employing equivalent resistance paths to improve electromigration resistance
A structure of a conductive line. The structure of a conductive line comprises a substrate with two conductive lines formed thereon. These two conductive lines are isolated by the formation of a...
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5714400 |
Method for forming a memory device by utilizing variations in resistance value
On an insulating substrate are formed first aluminum interconnections. In openings formed in a silicon dioxide film are formed unit cells each consisting of a tungsten electrode and an aluminum...
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5665627 |
Method of irreversibly locking a portion of a semiconductor device
A fuse for an integrated circuit is constituted by a shallow NP junction, covered with a metal contact, the semiconductor region being not excessively doped. For the blowing of the fuse, the...
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5650337 |
Monolithic optoelectronic and electronic structures
The invention related to a process for the production of a monolithic electronic and/or optoelectronic single-element or multi-element structure from a semionic material selected from the group of...
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5635410 |
Bias temperature treatment method
The time and labor required for bias temperature (BT) treatment of a semi-conductor wafer is reduced by utilizing apparatus in which turning a switch 40 on connects a first d.c. power source 30 to...
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5597762 |
Field-enhanced diffusion using optical activation
A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity...
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5413942 |
Monolithic electronic structures
The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further...
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5264377 |
Integrated circuit electromigration monitor
The electromigration characteristics of integrated circuit conductors are determined by passing a high current for a short period of time through an inventive test structure. This provides a rapid...
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5110758 |
Method of heat augmented resistor trimming
An improved method of trimming resistors by metal migration by local heating (18,21) of the resistor (23) to allow a reduced level of electric current to be used. The resistor is then trimmed by...
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4876220 |
Method of making programmable low impedance interconnect diode element
A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric...
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4713680 |
Series resistive network
First and second resistors of a resistive network formed in a semiconductive substrate may be individually trimmed. The first and second resistive regions coupled at one end thereof have their...
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4671845 |
Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
The present invention relates to the production of a stable insulator of a germanium and a device produced thereby. A germanium substrate is provided with a layer of silicon nitride deposited on...
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4662063 |
Generation of ohmic contacts on indium phosphide
A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of...
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4646427 |
Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
In a method of electrically altering the characteristics of a semiconductor device, a lateral polysilicon zener diode's zener knee voltage may be shifted either to a higher or lower voltage. An...
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4549912 |
Anode and cathode connections for the practice of electromigration
In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this...
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4534100 |
Electrical method of making conductive paths in silicon
A method of forming an electrical conductive path between parallel surfaces of a substrate is disclosed wherein a pulsed voltage, non-current limited, power supply causes aluminum to electromigrate...
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4403399 |
Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
In a memory array wherein each cell includes an emitter follower, a diode is formed on the emitter by a thin layer which is capable of being shorted by vertical migration of bit line atoms through...
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4392928 |
Method of doping a semiconductor
A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the...
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4381598 |
Method of making anode and cathode connections for electromigration
In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this...
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4377423 |
Liquid metal inclusion migration by means of an electrical potential gradient
Liquid metal inclusions are migrated in a host body of semiconductor material by means of an electrical potential gradient to produce regions of recrystallized single crystal semiconductor material...
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4251289 |
Gradient doping in amorphous silicon
An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the...
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4193003 |
Method for controlling the migration of a chemical species within a solid substrate
The method for controlling the migration of an electronegative chemical species within a solid substrate which exhibits ionic conduction consists in irradiating the substrate with electrons which...
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4186045 |
Method of epitaxial growth employing electromigration
A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric...
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4032418 |
Method of introducing impurities into a semiconductor
A method of manufacturing a p-n, n + -n or p + -p junction in a semiconducting material, introducing into said material ions of an impurity material by exposing a surface of said semiconductor to a...
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3980505 |
Process of making a filament-type memory semiconductor device
An improved memory device to be used in a D.C. circuit which device includes a pair of spaced electrodes between which extends a body of a generally amorphous high resistance memory semiconductor...
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