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Match Document Document Title
8178945 Programmable PN anti-fuse  
Structure and method for providing a programmable anti-fuse in a FET structure. A method of forming the programmable anti-fuse includes: providing a p− substrate with an n+ gate stack; implanting a...
8168518 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device  
A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption...
8163593 Method of making a nonvolatile phase change memory cell having a reduced contact area  
A method is described to form a nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic...
8159041 Semiconductor device and manufacturing method thereof  
A semiconductor device includes: a lower layer interconnection formed on a chip; an upper layer interconnection formed in an upper layer above the lower layer interconnection above the chip; an...
8143111 System and method for configuring an integrated circuit  
A system and method for configuring an integrated circuit. Embodiments include a method for manufacturing an integrated circuit (IC), comprising associating configuration items of the integrated...
8138524 Self-aligned method of forming a semiconductor memory array of floating memory cells with source side erase, and a memory array made thereby  
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a substrate of semiconductor material having a first conductivity type,...
8133767 Efficient interconnect structure for electrical fuse applications  
A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has...
8115275 Electrical antifuse  
An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal...
8105886 Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same  
A fuse link is formed between first and second terminals. The first and second terminals and fuse link have a polysilicon layer and a layer formed on the polysilicon layer and containing a metal...
8101505 Programmable electrical fuse  
The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a...
8080861 Semiconductor device  
A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an...
8076760 Semiconductor fuse arrangements  
The invention includes semiconductor fuse arrangements containing an electrically conductive plate over and in electrical contact with a plurality of electrically conductive links. Each of the...
8030181 Electrical fuse circuit for security applications  
A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially...
8030736 Fin anti-fuse with reduced programming voltage  
A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor...
7998798 Method of cutting electrical fuse  
A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first...
7981731 Method of forming a high impedance antifuse  
A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first...
7981732 Programming of laser fuse  
A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The...
7982285 Antifuse structure having an integrated heating element  
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a...
7940593 Method and apparatus for verification of a gate oxide fuse element  
The present invention relates to a method and circuit for verifying the state of a gated fuse element used with a one-time programmable CMOS memory device. A first expected state is set and a state...
7927995 Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application  
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided....
7919363 Integrated circuit with additional mini-pads connected by an under-bump metallization and method for production thereof  
A semiconductor device includes a semiconductor chip. External connection pads and further pads are disposed over a surface of the semiconductor chip. Selected ones of the further pads are...
7915093 System and method for manufacturing an integrated circuit anti-fuse in conjunction with a tungsten plug process  
A system and method are disclosed for manufacturing an integrated circuit anti-fuse in conjunction with a tungsten plug process. A tungsten plug is formed in a dielectric layer that overlies a...
7915094 Method of making a diode read/write memory cell in a programmed state  
A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one...
7892904 Amorphous silicon MONOS or MAS memory cell structure with OTP function  
A semiconductor device with an amorphous silicon (a-Si) metal-oxide-nitride-oxide-silicon (MONOS) or metal-aluminum oxide-silicon (MAS) memory cell structure with one-time programmable (OTP)...
7892926 Fuse link structures using film stress for programming and methods of manufacture  
A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, forming an e-fuse over the at least one STI and depositing an...
7880266 Four-terminal antifuse structure having integrated heating elements for a programmable circuit  
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a...
7872327 Semiconductor integrated circuit device and method of producing the same  
A semiconductor integrated circuit device has: a layer insulating film formed on a semiconductor substrate; a fuse portion which is configured by an uppermost metal wiring layer that is formed on...
7838358 Semiconductor device with capacitor and fuse and its manufacture method  
An upper electrode of a capacitor has a two-layer structure of first and second upper electrodes. A gate electrode of a MOS field effect transistor and a fuse are formed by patterning conductive...
7833844 Semiconductor device and production method of the same  
A disclosed method of producing a semiconductor device includes the steps of (A) forming a gate electrode and a trimming fuse on a semiconductor substrate; (B) forming a side wall insulating film...
7833843 Method for forming a memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide  
A method of forming a memory cell involves forming a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode...
7829354 Method of fusing trimming for semiconductor device  
Deviation occurring in a particular region in a plane of a resistor group which constitutes a semiconductor integrated circuit is improved and a quick increase in yield is accomplished. Provided is...
7820492 Electrical fuse with metal silicide pipe under gate electrode  
An electrical fuse (eFuse) has a gate prepared from a conductive or partially conductive material such as polysilicon, a semiconductor substrate having a pipe region in proximity to the gate, and...
7816190 E-ink display and method for repairing the same  
An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate...
7791111 Semiconductor device with an opening for cutting a fuse  
A semiconductor device has a plurality of fuse element portions each of which including a first fuse interconnect having a fuse to be portion, a second fuse interconnect connected to an internal...
7790518 Method of trimming semiconductor elements with electrical resistance feedback  
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is...
7786549 Antifuse structure and system for closing thereof  
A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap...
7786000 Buried bit line anti-fuse one-time-programmable nonvolatile memory  
An anti-fuse one-time-programmable (OTP) nonvolatile memory cell has a P well substrate with two P− doped regions. Another N+ doped region, functioning as a bit line, is positioned adjacent and b...
7781280 Semiconductor device with capacitor and fuse and its manufacture method  
An upper electrode of a capacitor has a two-layer structure of first and second upper electrodes. A gate electrode of a MOS field effect transistor and a fuse are formed by patterning conductive...
7772047 Method of fabricating a semiconductor die having a redistribution layer  
A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the...
7772680 Arrangements of fuse-type constructions  
The invention includes semiconductor fuse arrangements containing an electrically conductive plate over and in electrical contact with a plurality of electrically conductive links. Each of the...
7772093 Method of and circuit for protecting a transistor formed on a die  
A method of protecting a transistor formed on a die of an integrated circuit is disclosed. The method comprises forming an active region of the transistor on the die; forming a gate of the...
7759226 Electrical fuse with sacrificial contact  
The electrical fuse includes a cathode pad, an anode pad and a fuse link connecting the cathode pad to the anode pad. The cathode pad includes a group of multiple electrical contacts and a solitary...
7728407 Semiconductor device and method of cutting electrical fuse  
A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first...
7700415 Stacked bit line dual word line nonvolatile memory  
An arrangement of nonvolatile memory devices, having at least one memory device level stacked level by level above a semiconductor substrate, each memory level comprising an oxide layer...
7691684 Fin-type antifuse  
A method of forming an antifuse forms a material layer and then patterns the material layer into a fin. The center portion of the fin is converted into a substantially non-conductive region and the...
7687883 Electronically programmable antifuse and circuits made therewith  
An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F)...
7679373 Trimming circuit, electronic circuit, and trimming control system  
A trimming circuit, an electronic circuit, and a trimming control system for reducing the risk of failures when perform trimming and for ensuring that a desired device is readily manufactured. A...
7674691 Method of manufacturing an electrical antifuse  
An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal...
7667289 Fuse structure having a tortuous metal fuse line  
A laser fuse structure for a semiconductor device, the laser fuse structure having an array of laser fuses wherein one or more of the fuses in the array have a tortuous fuse line extending between...
7662674 Methods of forming electromigration and thermal gradient based fuse structures  
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure,...
Matches 1 - 50 out of 253 1 2 3 4 5 6 >