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7618850 Method of making a diode read/write memory cell in a programmed state  
A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one...
7605059 Semiconductor device and method of manufacturing the semiconductor device  
A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive...
7575984 Conductive hard mask to protect patterned features during trench etch  
A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors...
7538399 Thin film transistor substrate and manufacturing method thereof  
The present invention relates to a thin film transistor (TFT) substrate and method of making such a TFT substrate. The structure of the TFT substrate helps prevent damage to signal lines in...
7531388 Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabricating thereof  
Electrically programmable fuse structures and methods of fabrication thereof are presented, wherein a fuse includes first and second terminal portions interconnected by an elongate fuse element....
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7508016 CMOS imager having on-chip ROM  
A CMOS image sensor formed on a chip has a ROM disposed on the chip for recording pixel defect locations, chip-by-chip variations such as bias, and other manufacturing production data. Testing...
7507607 Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process  
A silicide bridged anti-fuse and a method of forming the anti-fuse are disclosed. The silicide bridged anti-fuse can be formed with a tungsten plug metalization process that does not require any...
7495309 Semiconductor device and manufacturing method thereof  
A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A...
7442626 Rectangular contact used as a low voltage fuse element  
A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse...
7442625 Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device  
An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under...
7427802 Irreversible reduction of the value of a polycrystalline silicon resistor  
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting...
7413936 Method of forming copper layers  
A programmable package with a fuse embedded therein, and fabrication method are provided. The fuse has first and second terminal ends joined by a central portion defining a fusible link. The ends...
7390726 Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer  
A metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. An insulating layer is disposed above a lower metal interconnect layer. The insulating layer...
7384824 Structure and programming of laser fuse  
A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated...
7358590 Semiconductor device and driving method thereof  
A semiconductor device includes a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which...
7352050 Fuse region of a semiconductor region  
In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the...
7351613 Method of trimming semiconductor elements with electrical resistance feedback  
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is...
7338843 Method for producing an electronic component, especially a memory chip  
A method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalize an integrated circuit by means of at least one laser via in a layer at least...
7323761 Antifuse structure having an integrated heating element  
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a...
7314815 Manufacturing method of one-time programmable read only memory  
An one-time programmable read only memory is provided. An N-type doping region and a first P-type doping layer are disposed in a P-type semiconductor substrate sequentially. A second P-type doping...
7272067 Electrically-programmable integrated circuit antifuses  
Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse...
7268068 Semiconductor device and manufacturing method thereof  
A semiconductor device comprises a multiple insulation layer structure in which multiple insulation layers each having interconnection layer are built up and either one of the interconnection layer...
7242072 Electrically programmable fuse for silicon-on-insulator (SOI) technology  
A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator...
7232711 Method and structure to prevent circuit network charging during fabrication of integrated circuits  
An integrated circuit and method of fabricating the integrated circuit. The integrated circuit, including: one or more power distribution networks; one or more ground distribution networks; one or...
7227238 Integrated fuse with regions of different doping within the fuse neck  
An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second...
7205631 Poly-silicon stringer fuse  
A polysilicon silicide stringer fuse is constructed having a narrow width by using an overlay tolerance of the photo stepper tool instead of the minimum critical dimension tolerance of the stepper...
7183141 Reversible field-programmable electric interconnects  
A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly...
7176065 Magnetic tunneling junction antifuse device  
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft...
7176064 Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide  
A memory cell is formed of a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the...
7160761 Vertically stacked field programmable nonvolatile memory and method of fabrication  
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells....
7132350 Method for manufacturing a programmable eraseless memory  
A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first...
7125755 Method and structure for electrostatic discharge protection of photomasks  
A mask for manufacturing integrated circuits and use of the mask. The mask has a mask substrate. The mask also has an active mask region within a first portion of the mask substrate. The active...
7122448 Annealing apparatus, annealing method, and manufacturing method of a semiconductor device  
An annealing apparatus, includes a substrate stage placing a semiconductor substrate; a light source facing the substrate stage, configured to irradiate a pulsed light at a pulse width of...
7098083 High impedance antifuse  
A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first...
7092273 Low voltage non-volatile memory transistor  
A p-channel non-volatile memory (NVM) transistor is programmed by shifting the threshold voltage of the transistor. The threshold voltage is shifted by introducing a programming current to the gate...
7067897 Semiconductor device  
A semiconductor device comprising a substrate, a plurality of dielectric films formed on the substrate, laid one upon another, and a fuse interconnect-wire formed above the substrate and covered...
7026692 Low voltage non-volatile memory transistor  
A p-channel non-volatile memory (NVM) transistor is programmed by shifting the threshold voltage of the transistor. The threshold voltage is shifted by introducing a programming current to the gate...
7022572 Manufacturing method for integrated circuit having disturb-free programming of passive element memory cells  
In a passive element memory array, such as a rail stack array having a continuous semiconductor region along one or both of the array lines, programming a memory cell may disturb nearby memory...
7015076 Selectable open circuit and anti-fuse element, and fabrication method therefor  
A method is provided of forming an integrated circuit with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a...
7009891 System and method for one-time programmed memory through direct-tunneling oxide breakdown  
A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable...
7005727 Low cost programmable CPU package/substrate  
A programmable package with a fuse embedded therein, and fabrication method are provided. The fuse has first and second terminal ends joined by a central portion defining a fusible link. The ends...
6984548 Method of making a nonvolatile memory programmable by a heat induced chemical reaction  
A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a...
6979880 Scalable high performance antifuse structure and process  
Systems and methods are provided for a scalable high-performance antifuse structure and process that has a low RC component, a uniform dielectric breakdown, and a very low, effective dielectric...
6955926 Method of fabricating data tracks for use in a magnetic shift register memory device  
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10...
6949416 Method of manufacturing a semiconductor integrated circuit device  
Disclosed is a technique capable of enhancing the degree of freedom in the layout of a rerouting layer in a wafer level CSP in which defect repairing is performed by cutting a fuse. More...
6927474 Method of programming an antifuse  
A metal-to-metal capacitor in a semiconductor integrated circuit is converted to a conductive structure by connecting the first metal plate of the capacitor to ground and the second metal plate of...
6927093 Method for making programmable resistance memory element  
A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance...
6919234 Method for producing an antifuse in a substrate and an antifuse structure for integration in a substrate  
Method for producing an antifuse in a substrate, a first interconnect being applied to the substrate, a dielectric layer being applied at an end face of the first interconnect, which end face...
6913954 Programmable fuse device  
A fuse device including a transistor having a source, drain, and gate. The gate includes a first and second gate contact. A current may be run from the first gate contact to the second gate contact...
Matches 1 - 50 out of 207 1 2 3 4 5 >