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8183132 |
Methods for fabricating group III nitride structures with a cluster tool
The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure...
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8183068 |
Nitride-based semiconductor light emitting device and method of manufacturing the same
A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The...
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8183075 |
Method of fabricating semiconductor substrate and method of fabricating light emitting device
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a...
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8183066 |
Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
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8183065 |
LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same
An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate...
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8178378 |
Method of manufacturing vertical nitride semiconductor light emitting diode
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode;...
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8178870 |
Organic electroluminescence element
An organic electroluminescence element includes an anode and a transparent electrode cathode. An organic luminescent layer is located between the anode and the cathode. An electron injection layer...
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8178373 |
Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density...
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8178375 |
Method of determining compound ratio of compound semiconductor for light generating device
A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle...
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8178376 |
Method for fabricating LED chip comprising reduced mask count and lift-off processing
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8178377 |
Method for fabricating lED chip comprising reduced mask count
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8178370 |
Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
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8173465 |
Method for fabricating LED chip comprising reduced mask count and lift-off processing
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8174025 |
Semiconductor light emitting device including porous layer
A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light...
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8173467 |
Method for fabricating LED chip comprising reduced mask count and lift-off processing
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8173468 |
Method for fabricating LED chip comprising reduced mask count and lift-off processing
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8173456 |
Method of manufacturing a light emitting diode element
A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are...
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8173464 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side,...
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8173466 |
Method for fabricating LED chip comprising reduced mask count and lift-off processing
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a...
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8173458 |
Method for forming quantum well structure and method for manufacturing semiconductor light emitting element
A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
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8168984 |
Light emitting diodes with smooth surface for reflective electrode
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure....
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8168516 |
Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
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8163651 |
Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof
The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for...
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8164108 |
Light emitting diode chip and manufacturing method thereof
A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a...
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8163582 |
Method for fabricating a light emitting diode chip including etching by a laser beam
A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are...
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8163576 |
Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an...
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8163578 |
Light emitting diodes with smooth surface for reflective electrode
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure,...
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8163581 |
Semiconductor and optoelectronic devices
Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.
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8163573 |
Method for manufacturing nitride semiconductor element
InyGa1-yN (0
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8158987 |
Light-emitting diode and method for fabrication thereof
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first...
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8154008 |
Light emitting diode with improved structure
A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based...
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8148186 |
Long-wavelength resonant-cavity light-emitting diode
An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting...
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8143635 |
Gallium nitride compound semiconductor light-emitting device, method of manufacturing the same, and lamp including the same
The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen...
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8138511 |
Radiation-emitting semiconductor component and method for producing the semiconductor component
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the...
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8133803 |
Method for fabricating semiconductor substrates and semiconductor devices
A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening...
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8129208 |
n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN...
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8129209 |
Method for fabricating a semiconductor component based on GaN
A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers...
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8129210 |
Manufacturing method of microstructure
A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a...
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8128756 |
Technique for the growth of planar semi-polar gallium nitride
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar...
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8124431 |
Nitride semiconductor laser device and method of producing the same
A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride...
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8124989 |
Light optoelectronic device and forming method thereof
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
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8124982 |
Semiconductor light-emitting element and method for fabrication the same
The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked...
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8124430 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method for forming quantum well structure and method for manufacturing semiconductor light emitting element
A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
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8124432 |
Nitride semiconductor optical element and manufacturing method thereof
In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In...
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8124433 |
Low optical loss electrode structures for LEDs
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
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8124518 |
Semiconductor heterostructure nanowire devices
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound...
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8124986 |
Nitride-based semiconductor device and method for fabricating the same
A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an...
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8119428 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of manufacturing nitride semiconductor light emitting device
An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is...
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8119488 |
Scalable quantum well device and method for manufacturing the same
A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the...
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8115226 |
Low optical loss electrode structures for LEDs
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the...
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