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7623560 |
Quantum photonic imagers and methods of fabrication thereof
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
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7622318 |
Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
When a semiconductor light emitting device or a semiconductor device is produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a...
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7615389 |
GaN lasers on ALN substrates and methods of fabrication
Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the...
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7611917 |
Methods of forming light emitting devices with active layers that extend into opened pits
Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a...
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7608853 |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that...
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7608472 |
Light emitting element and method of making same
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al X In Y Ga (1-X-Y) ) 2 O 3 where...
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7608471 |
Method and apparatus for integrating III-V semiconductor devices into silicon processes
Method and apparatus for fabricating semiconductor devices, for example, III-V semiconductor devices, having a desired substrate, for example, a silicon substrate. A method for fabricating...
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7606281 |
Method of producing multi-wavelength semiconductor laser device
A method for producing a multi-wavelength semiconductor laser device includes the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the...
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7606280 |
Method of producing multi-wavelength semiconductor laser device
A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single...
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7605012 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same
A light emitting device includes a silicon substrate ( 1 ), a silicon nitride film ( 2 ) formed on the surface of the silicon substrate ( 1 ), at least an n-type layer ( 3 ), ( 4 ) and a p-type...
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7602830 |
Monolithic semiconductor laser and method of manufacturing the same
A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure...
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7601985 |
Semiconductor light-emitting device
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
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7601621 |
Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode
A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and...
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7598530 |
Light emitting diode with high illumination
A light emitting diode ( 80 ) includes a first and a second semiconductor structures ( 30, 40 ), and an adhesive layer ( 34, 46 ) between the first and the second semiconductor structures. The...
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7592194 |
Radiation-emitting and/or -receiving semiconductor component and method for the patterned application of a contact to a semiconductor body
A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body ( 1 ), which has an active zone ( 2 ) provided for radiation generation or for radiation reception, a...
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7582498 |
Resonant cavity light emitting devices and associated method
A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport...
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7579627 |
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface...
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7579205 |
Method of fabricating light emitting device and thus-fabricated light emitting device
A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer...
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7579200 |
Semiconductor light emitting apparatus and method of fabricating the same
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It...
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7576365 |
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride...
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7575947 |
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the...
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7575946 |
Method for making compound semiconductor and method for making semiconductor device
In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes...
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7575944 |
Method of manufacturing nitride-based semiconductor light emitting diode
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor...
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7575943 |
Quantum dot laser diode and method of manufacturing the same
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer...
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7573075 |
Compound semiconductor device, production method of compound semiconductor device and diode
A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the...
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7572652 |
Light emitting element and production method thereof
A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is...
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7569461 |
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of...
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7566580 |
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for...
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7566579 |
Method of fabricating semiconductor devices with a multi-role facilitation layer
A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to...
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7566578 |
GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first...
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7563630 |
Method for fabricating a semiconductor laser device that includes growing current confinement layers and a mesa side surface
A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying...
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7556977 |
Semiconductor manufacturing method and semiconductor laser device manufacturing method
There are provided preflow periods t 11 , t 12 in which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor),...
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7556976 |
Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an...
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7553685 |
Method of fabricating light-emitting device and light-emitting device
A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24 , and is designed so as to...
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7550368 |
Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device
A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature...
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7550309 |
Method for producing semiconductor wafer
The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si 1-X Ge X layer (0<X<1) on an SOI wafer, forming a Si 1-Y Ge Y ...
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7544971 |
Lateral current blocking light-emitting diode and method for manufacturing the same
A lateral current blocking light-emitting diode and a method for manufacturing the same are disclosed. The light-emitting diode comprises an insulating substrate, a semiconductor epitaxial...
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7541208 |
Methods for preserving strained semiconductor substrate layers during CMOS processing
Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by...
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7541206 |
Nitride-based semiconductor light-emitting device and method of manufacturing the same
A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the...
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7537950 |
Nitride-based light emitting heterostructure
An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light...
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7534633 |
LED with substrate modifications for enhanced light extraction and method of making same
The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be...
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7528417 |
Light-emitting diode device and production method thereof
A double hetero structure light-emitting diode device includes an active layer ( 6 ), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer ( 4 ), a window layer ( 9 )...
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7528416 |
Vertical structure LED and fabricating method thereof
A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of...
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7524692 |
Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting device
The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a...
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7524691 |
Method of manufacturing group III nitride substrate
The present invention provides a manufacturing method that makes it possible to manufacture a substrate that is formed of high-quality Group III nitride crystals alone and has less warping. A Group...
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7521273 |
Light emitting device methods
Light-emitting device methods are disclosed.
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7508011 |
Semiconductor light generating device
The semiconductor light generating device comprises a light generating region 3, a first Al X1 Ga 1-X1 N semiconductor (0≦X1≦1) layer 5 and a second Al X2 Ga 1-X2 N semiconductor...
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7505503 |
Vertical cavity surface emitting laser (VCSEL) and related method
A vertical cavity surface emitting laser (VCSEL) is disclosed that has a relatively low vertical resistance between the Ohmic contact to the upper distributed Bragg reflector (DBR) and the active...
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7502405 |
Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth
The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the...
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7501327 |
Fabricating method of semiconductor optical device for flip-chip bonding
Disclosed is a method for manufacturing a semiconductor optical device for flip-chip bonding. The method includes the steps of: etching an active layer and clad which are sequentially stacked on a...
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