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8173521 |
Method for manufacturing bonded wafer
The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer...
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8173518 |
Method of wafer bonding
Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer...
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8169019 |
Metal-oxide-semiconductor chip and fabrication method thereof
A metal-oxide-semiconductor chip having a semiconductor substrate, an epitaxial layer, at least a MOS cell, and a metal pattern layer is provided. The epitaxial layer is located on the...
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8168509 |
Etching methods and methods of manufacturing a CMOS image sensor using the same
In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities...
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8168512 |
Manufacturing method of semiconductor device
To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the...
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8163570 |
Method of initiating molecular bonding
A method of initiating molecular bonding, comprising bringing one face of a first wafer to face one face of a second wafer and initiating a point of contact between the two facing faces. The point...
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8158489 |
Formation of TSV backside interconnects by modifying carrier wafers
An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is...
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8158456 |
Method of forming stacked dies
The formation of through silicon vias (TSVs) in an integrated circuit (IC) die or wafer is described in which the TSV is formed in the integration process prior to metallization processing. TSVs...
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8156981 |
Combination of a substrate and a wafer
The invention pertains to a combination of a substrate (6) and a wafer (15), wherein the substrate (6) and the wafer (15) are arranged parallel to one another and bonded together with the aid of an...
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8158515 |
Method of making 3D integrated circuits
A method and structure of connecting at least two integrated circuits in a 3D arrangement by a through silicon via which simultaneously connects a connection pad in a first integrated circuit and a...
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8153505 |
Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface...
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8153508 |
Method for fabricating image sensor
A method for fabricating an image sensor is provided. In the image sensor fabrication method, an interconnection and a dielectric interlayer are formed on a semiconductor substrate including a...
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8153452 |
Manufacturing method of semiconductor device
The semiconductor device is formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thickness, performing back grinding to a second main surface of...
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8148238 |
Method of manufacturing semiconductor device
There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device...
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8142593 |
Method of transferring a thin film onto a support
A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and...
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8137995 |
Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive...
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8138065 |
Solid-state imaging device and method for manufacturing the same
A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface...
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8133773 |
Apparatus and method for reducing photo leakage current for TFT LCD
In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first...
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8125073 |
Wafer integrated with permanent carrier and method therefor
A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within...
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8124439 |
Method for making an optical device with integrated optoelectronic components
A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical...
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8125429 |
Liquid crystal display device
A small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales is provided. Gray scale display is...
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8124499 |
Method and structure for thick layer transfer using a linear accelerator
Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and...
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8124471 |
Method of post-mold grinding a semiconductor package
A method of grinding a molded semiconductor package to a desired ultra thin thickness without damage to the package is disclosed. Prior to grinding a molded package to a desired package thickness,...
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8124498 |
Method of manufacturing group III nitride semiconductor layer bonded substrate
The present method of manufacturing a group III nitride semiconductor layer bonded substrate includes the steps of: implanting ions I of at least any of hydrogen and helium in a region having a...
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8119501 |
Method for separating a semiconductor wafer into individual semiconductor dies using an implanted impurity
Provided is a method for separating a semiconductor wafer into individual semiconductor dies. The method for separating the semiconductor wafer, among other steps, may include implanting an...
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8119500 |
Wafer bonding
A method for providing a stacked wafer configuration is provided. The method includes bonding a first wafer to a second wafer. A filler material is applied in a gap formed along edges of the first...
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8119497 |
Thin embedded active IC circuit integration techniques for flexible and rigid circuits
A flexible electronic circuit member formed of a plurality of dielectric layers includes a plurality of thinned semiconductor chips embedded within the circuit member for increased levels of...
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8113914 |
Treating method for brittle member
An object of the present invention is to provide a treating method for brittle member capable of stably holding the brittle member when applying predetermined treatments such as transportation and...
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8114707 |
Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip
A temporary substrate having an array of first solder pads is bonded to the front side of a first substrate by reflowing an array of first solder balls. The first substrate is thinned by removing...
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8110480 |
Method and structure for fabricating solar cells using a thick layer transfer process
A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first...
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8110439 |
Method of stacking and interconnecting semiconductor packages via electrical connectors extending between adjoining semiconductor packages
An electronic component is disclosed including a plurality of stacked semiconductor packages. A first such embodiment includes an internal connector for electrically coupling the stacked...
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8110478 |
Method for manufacturing semiconductor substrate, display panel, and display device
If the size of a single crystal silicon layer attached is not appropriate, even when a large glass substrate is used, the number of panels to be obtained cannot be maximized. Therefore, in the...
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8105887 |
Inducing stress in CMOS device
A first aspect of the invention provides a method of forming a semiconductor device, the method comprising: providing a complimentary metal oxide semiconductor (CMOS) device including: a silicon...
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8105917 |
Connection pad structure for an image sensor on a thinned substrate
The invention relates to the fabrication of electronic circuits on a thinned semiconductor substrate. To produce a connection pad on the back side of the thinned substrate, the procedure is as...
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8101490 |
Method for manufacturing semiconductor device and apparatus for manufacturing same
A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor...
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8101499 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Formation of TSV backside interconnects by modifying carrier wafers
An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is...
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8101502 |
Semiconductor device and its manufacturing method
A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer...
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8101498 |
Bonded intermediate substrate and method of making same
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle...
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8101503 |
Method of producing a thin layer of semiconductor material
A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced...
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8097493 |
Method of manufacturing semiconductor light emitting elements
A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a...
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8097526 |
Accessing or interconnecting integrated circuits
Multiple integrated circuits (ICs) die, from different wafers, can be picked-and-placed, front-side planarized using a vacuum applied to a planarizing disk, and attached to each other or a...
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8097523 |
Method for manufacturing bonded wafer
A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an...
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8097492 |
Method and manufacture of silicon based package and devices manufactured thereby
A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then...
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8093138 |
Method of fabricating an epitaxially grown layer
A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of...
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8093137 |
Method of manufacturing semiconductor wafer
A device layer is formed on at least the upper surface of a prime wafer by an epitaxial growth method. Then, a protective film is formed to cover at least the device layer. The lower surface of the...
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8093687 |
Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer
Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface...
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8093090 |
Integrated circuit edge and method to fabricate the same
In the fabrication of an integrated circuit, a trench with a sidewall is formed along the periphery of the integrated circuit and the substrate is back-lapped to a thickness smaller than the trench...
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8088672 |
Producing a transferred layer by implanting ions through a sacrificial layer and an etching stop layer
A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching...
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8088669 |
Method for manufacturing substrate of semiconductor device
A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor...
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8088670 |
Method for manufacturing bonded substrate with sandblast treatment
When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and...
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