Match Document Document Title
9123595 Method for fabricating a semiconductor device by bonding a layer to a support with curvature  
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a...
9093457 Stacked microelectronic packages having patterned sidewall conductors and methods for the fabrication thereof  
Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging...
9076839 Method for manufacturing SOI substrate  
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of...
9040425 Methods of forming printable integrated circuit devices and devices formed thereby  
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to...
9040389 Singulation processes  
In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate...
9040388 Chip assembly with a coreless substrate employing a patterned adhesive layer  
A patterned adhesive layer including holes is employed to attach a coreless substrate layer to a stiffener. The patterned adhesive layer is confined to kerf regions, which are subsequently removed...
9040420 Manufacturing method of semiconductor device including peeling layers from substrates by etching  
The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling...
9041165 Relaxation and transfer of strained material layers  
A method for the formation of an at least partially relaxed strained material layer, comprises providing a seed substrate; patterning the seed substrate; growing a strained material layer on the...
9041147 Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus  
According to a semiconductor substrate (40), a space (A) between a plurality of Si thin film (16), which are provide apart from one another on the insulating substrate (30), is (I) larger than a...
9040387 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Stacked microelectronic packages having patterned sidewall conductors and methods for the fabrication thereof
 
Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging...
9034734 Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies  
Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be...
9029240 Method for manufacturing SOI wafer  
The present invention provides a method for manufacturing an SOI wafer, in which an insulator film is formed at least on all surfaces of a base wafer, and while protecting a first part of the...
9029951 Semiconductor device having well regions with opposite conductivity  
A semiconductor device with an SRAM memory cell having improved characteristics. Below an active region in which a driver transistor including a SRAM is placed, an n type back gate region...
9029238 Advanced handler wafer bonding and debonding  
A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a...
9029239 Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction  
A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the...
9029184 Photoelectric conversion device and method for manufacturing the same  
To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single...
9023716 Methods for processing substrates  
A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is...
9018675 Heterojunction III-V photovoltaic cell fabrication  
A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base...
9015914 Method for manufacturing electronic component  
A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such...
9013650 Peeling method and method for manufacturing display device using the peeling method  
The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a...
9006081 Methods of processing substrates  
Methods of manufacturing a plurality of semiconductor chips are provided. The method may include providing a middle layer between a substrate and a carrier to combine the carrier with the...
9006785 Doped and strained flexible thin-film transistors  
Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer...
9006084 Method of preparing semiconductor layer including cavities  
A method of fabricating a semiconductor substrate, includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second...
9006013 Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer  
According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting...
8999812 Graphene devices and methods of manufacturing the same  
A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer...
9001520 Microelectronic structures having laminated or embedded glass routing structures for high density packaging  
Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a...
8997822 Substrate inverting device, substrate inverting method, and peeling system  
According to an embodiment of the present disclosure, a substrate inverting device for inverting front and rear surfaces of a substrate is provided. The substrate includes a first holding unit...
8993368 Method for manufacturing an opto-microelectronic device  
Method for manufacturing a microelectronic device from a first substrate (10), including the production of at least one electronic component in the semi-conductor substrate after transferring the...
8993410 Substrate cleaving under controlled stress conditions  
A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate...
8991673 Substrate cutting device and method  
An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source...
8993370 Reverse stack structures for thin-film photovoltaic cells  
In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact...
8986497 Laser lift off systems and methods  
Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume...
8987032 Method for selective under-etching of porous silicon  
A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a...
8987115 Epitaxial growth of silicon for layer transfer  
Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth...
8987024 System for wafer-level phosphor deposition  
System for wafer-level phosphor deposition. In an aspect, a semiconductor wafer is provided that includes a plurality of LED dies wherein at least one die includes an electrical contact, a...
8975158 Method for permanently bonding wafers  
A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate. The method comprises: forming at least one reservoir in at least one...
8975159 Method for manufacturing bonded wafer  
A method for manufacturing a bonded wafer having a semiconductor film on a handle substrate involving the steps of: implanting ions into a semiconductor substrate to form an ion-implanted layer;...
8975150 Semiconductor device manufacturing method  
A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element...
8975160 Manufacturing method for semiconductor device  
According to one embodiment, a first adhesive layer is formed on one major surface of a first substrate. The first substrate and a second substrate are adhered using a second adhesive layer that...
8970045 Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices  
Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded...
8969175 Method for producing singulated semiconductor devices  
A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The...
8969174 Fixed curvature force loading of mechanically spalled films  
A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is...
8969220 Methods and systems for laser processing of coated substrates  
Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light...
8969173 Method of fabricating electronic component  
A method of fabricating an electronic component includes: mounting a device chip on an upper surface of an insulative substrate; forming a sealing portion that seals the device chip; cutting the...
8963171 Image display device and the method for manufacturing the same  
An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film...
8962449 Methods for processing semiconductor devices  
Methods of forming a semiconductor structure include exposing a carrier substrate to a silane material to form a coating, removing a portion of the coating at least adjacent a periphery of the...
8962352 Method for calculating warpage of bonded SOI wafer and method for manufacturing bonded SOI wafer  
A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant...
8962450 Method for manufacturing a semiconductor-on-insulator structure having low electrical losses  
A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of...
8962363 Method for forming a groove on a surface of flat plate formed of a nitride semiconductor crystal  
Provided is a novel method for forming a groove composed of two smooth inclined surfaces on a surface of a flat plate formed of a nitride semiconductor crystal having an A, C, M-axes. In the...
8956911 LED phosphor and fabricating method thereof  
The present invention relates to a LED (light-emitting diode) phosphor and fabricating method thereof, and particularly relates to a LED phosphor having a light-emitting thin film (or...