Match Document Document Title
6991948 Method of electrical characterization of a silicon-on-insulator (SOI) wafer  
A method of characterizing a silicon-on-insulator (SOI) wafer, comprised of an insulating layer sandwiched between a semiconductor top layer and a semiconductor substrate, includes moving a pair of...
6989582 Method for making a multi-die chip  
The present invention generally relates to a die perimeter region of a die having a microelectromechanical assembly fabricated thereon. This die perimeter region may be configured to facilitate...
6982184 Method of fabricating MEMS devices on a silicon wafer  
A method of fabricating MEMS devices is provided. The method includes the steps of (a) providing a silicon wafer having a MEMS layer arranged on a MEMS side of the wafer; (b) applying a first...
6982181 Manufacturing process for ultra slim electrooptic display device unit  
To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as transmissive type LCD, a semi-transmissive type LCD, a reflective type LCD, a surface emitter...
6982209 Method of transferring devices by lateral etching of a sacrificial layer  
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then,...
6979659 Silicon fixture supporting silicon wafers during high temperature processing  
A process for hydrogen annealing silicon wafers that have been cut from an ingot and polished on both sides, thereby removing crystal originated pits (COPs) in their surface. The wafers are then...
6979629 Method and apparatus for processing composite member  
A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second...
6974726 Silicon wafer with soluble protective coating  
A silicon wafer has a plurality of integrated circuits terminated on a surface of the silicon wafer. The silicon wafer has a soluble protective coat on the surface of the silicon wafer. The coated...
6974758 Method of producing a light-emitting diode  
A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of...
6974521 Method for separating a film and a substrate  
A method for separating a film and a substrate, the method comprising the following stops: a) on the film at least a part of a foil is provided, whereby an adhesive contact between the film and the...
6972069 Device and method for connecting two wafers in a planar manner for grinding down and cutting up a product wafer  
A device for connecting two wafers in a planar manner for grinding down and cutting up a product wafer has a vacuum chamber, a chuck for receiving a carrier wafer, a heating device for heating up...
6972204 Method of transferring devices, method of arranging devices using the same, and method of manufacturing an image display system  
A first adhesive layer is provided on a base substrate, and multiple devices are arranged on the first adhesive layer. The first adhesive layer is irradiated with laser light from the back side of...
6969668 Treatment method of film quality for the manufacture of substrates  
A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium...
6969624 Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate  
The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first...
6969667 Electrical device and method of making  
An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation...
6967149 Storage structure with cleaved layer  
Apparatus and method for making a multi-layered storage structure includes forming a device layer on a single-crystal wafer, cleaving the device layer from the wafer, repeating the forming and...
6962829 Method of making near chip size integrated circuit package  
A plurality of integrated circuit chip (IC chip) packages are fabricated simultaneously from a single insulating substrate having sections. In each section, an IC chip is attached. Bonding pads on...
6958284 Method of smoothing the outline of a useful layer of material transferred onto a support substrate  
A method of providing a regular outline in a useful layer of material that is transferred from a source substrate onto a support substrate during the fabrication of a composite substrate for...
6955976 Method for dicing wafer stacks to provide access to interior structures  
Methods for dicing wafer stacks are provided. Preferably, the method includes the steps of: (1) providing a wafer stack having a first wafer and a second wafer; (2) exposing a portion of the first...
6953735 Method for fabricating a semiconductor device by transferring a layer to a support with curvature  
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a...
6951796 Substrate and manufacturing method therefor  
There is provided a method of manufacturing a substrate having a partial insulating layer under a semiconductor layer. A partial SOI substrate ( 40 ) is obtained by performing steps of forming the...
6949386 Method for mass production of a plurality of magnetic sensors  
The present invention relates to a method for producing in large numbers a multiplicity of magnetic sensors produced on a semiconductor substrate, these sensors comprising at least one magnetic...
6946325 Methods for packaging microelectronic devices  
Methods for packaging microelectronic devices and microelectronic devices formed by such methods are disclosed herein. In one embodiment, a method includes coupling a plurality of microelectronic...
6946046 Method and apparatus for separating member  
This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which...
6943047 Device transferring method, device arraying method, and image display fabrication method using the same  
A device transferring method and a device arraying method are provided for readily transferring a number of devices from a first substrate to a second substrate such that the devices are enlargedly...
6943056 Semiconductor device manufacturing method and electronic equipment using same  
A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element...
6939782 Method for producing thin layers on a specific support and an application thereof  
The invention relates to a method for producing a thin layer ( 8 ) containing at least one component ( 6, 6 A, 6 B) comprising:—a preparation step, wherein an added layer ( 2, 3, 4 ) is created...
6939784 Wafer scale package and method of assembly  
A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like...
6936500 Method for the lateral contacting of a semiconductor chip  
A description is given of a method for the lateral contacting of a semiconductor chip in which, in the case of a first semiconductor chip ( 11 ), which has an electrical contact ( 17 ) in a side...
6936523 Two-stage annealing method for manufacturing semiconductor substrates  
The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the...
6933208 Method of forming wiring, and method of arranging devices and method of manufacturing image display system by using the same  
A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating...
6933209 Stacking memory chips using flat lead-frame with breakaway insertion pins and pin-to-pin bridges  
Memory chips are assembled into a stack with an insertion-pin frame between pins of two stacked memory chips. The insertion-pin frame is not bent or formed into 3-dimensional shapes but is flat,...
6927146 Chemical thinning of epitaxial silicon layer over buried oxide  
The present invention discloses a method including: providing a silicon wafer; forming a buried oxide (BOX) in the silicon wafer below a silicon body; and reducing a thickness of the silicon body...
6927148 Ion implantation method and method for manufacturing SOI wafer  
Disclosed are an ion implantation method capable of dramatically increasing an implantation rate of hydrogen ions into a semiconductor substrate and a method for manufacturing an SOI wafer, in...
6927147 Coplanar integration of lattice-mismatched semiconductor with silicon via wafer bonding virtual substrates  
A method of bonding lattice-mismatched semiconductors is provided. The method includes forming a Ge-based virtual substrate and depositing on the virtual substrate a CMP layer that forms a...
6922890 Planarization process for thin film surfaces  
A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with...
6916676 Method for producing a nitride semiconductor element  
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an...
6911667 Encapsulation for organic electronic devices  
An embodiment of the present invention pertains to encapsulating an organic electronic device by selectively depositing a catalyst layer and then exposing the catalyst layer to a monomer to produce...
6911375 Method of fabricating silicon devices on sapphire with wafer bonding at low temperature  
Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing...
6911107 Piezoelectric film type actuator, liquid discharge head, and method of manufacturing the same  
A method for manufacturing a piezoelectric film type actuator, which is provided with a piezoelectric film and an oscillating plate structural member bonded therefor, comprises the steps of forming...
6908845 Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme  
The opening is initially fabricated in an upper surface of a wafer substrate, which allows for the use of alignment features on the upper surface of the wafer substrate. The openings are then...
6902989 Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate  
A method for manufacturing a gallium nitride (GaN)-based single crystalline substrate includes the steps of (a) forming a GaN-based single crystalline bulk on an upper surface of a growth...
6900114 Separating apparatus, separating method, and method of manufacturing semiconductor substrate  
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer...
6897124 Method of manufacturing a bonded wafers using a Bernoulli chuck  
A bonded wafer 27 and a residual wafer 28 are placed in a state of being superimposed on each other on a susceptor 20 disposed in a heat treatment 10 . A Bernoulli chuck 1 is moved to a...
6893942 Method for separating a mask from the surface of a semiconductor wafer  
A method for separating a mask from the surface of a semiconductor wafer comprises first mounting a mask/wafer combination on a rotatable surface and then rotating the rotatable surface. A...
6890834 Electronic device and method for manufacturing the same  
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess...
6890836 Scribe street width reduction by deep trench and shallow saw cut  
In a method to singulate a semiconductor wafer ( 100 ) into chips, trench streets ( 107 ) of predetermined depth ( 105 a ) are formed across the first, active wafer surface ( 102 ) to define the...
6890788 Manufacturing method of a micro structure  
A release layer is formed on a substrate, and plural thin-film patterns are formed on the release layer. The release layer is etched back at a prescribed depth at least in regions close to the...
6887650 TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM DEVICES, METHOD OF MANUFACTURING INTEGRATED CIRCUITS, CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL APPARATUS AND MANUFACTURING METHOD THEREOF, IC CARD, AND ELECTRONIC APPLIANCE  
A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred...
6887770 Method for fabricating semiconductor device  
A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface...