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7262113 |
Methods for transferring a useful layer of silicon carbide to a receiving substrate
Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source...
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7256102 |
Manufacturing method of thin film device substrate
An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101 . a heat...
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7256108 |
Method for reducing semiconductor die warpage
An anti-warpage backgrinding tape ( 11 ) is secured to the circuit side ( 12 ) of a semiconductor wafer ( 14 ). The backside ( 16 ) of the wafer is background. The backside of the wafer is secured...
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7256103 |
Method for manufacturing a compound material wafer
The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle...
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7256106 |
Method of dividing a substrate into a plurality of individual chip parts
The present invention relates to a method for dividing a substrate into a number of individual chip parts, comprising the steps of: forming a number of chip parts in the substrate, comprising, for...
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7256101 |
Methods for preparing a semiconductor assembly
Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate...
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7253081 |
Surface finishing of SOI substrates using an EPI process
A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a...
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7253083 |
Method of thinning a semiconductor structure
First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first...
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7250670 |
Semiconductor structure and fabricating method thereof
A semiconductor structure is provided. The semiconductor structure is disposed on the scribe line of a wafer and is around the chip area of the wafer. The semiconductor structure includes a...
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7247921 |
Semiconductor apparatus and method of manufacturing same, and method of detecting defects in semiconductor apparatus
A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the...
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7247545 |
Fabrication of a low defect germanium film by direct wafer bonding
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium...
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7244662 |
Method for manufacturing semiconductor integrated circuit
A method for manufacturing a semiconductor integrated circuit includes steps of forming a semiconductor element on a semiconductor substrate and separating only a function layer including the...
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7245331 |
Peeling method and method for manufacturing display device using the peeling method
The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a...
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7241667 |
Method of separating layers of material
A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the...
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7235462 |
Methods for fabricating a substrate
A method is provided for fabricating a substrate for optics, electronics, or opto-electronics. This method includes the steps of implanting atomic species into a face of a source substrate to form...
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7234237 |
Method for producing a protective cover for a device
In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first...
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7232737 |
Treatment of a removed layer of silicon-germanium
A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si 1-x Ge x and a second layer of Si 1-y Ge y . The method...
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7232738 |
Device and method for cutting an assembly
A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two...
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7232739 |
Multifunctional metallic bonding
Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer...
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7229898 |
Methods for fabricating a germanium on insulator wafer
Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate...
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7229897 |
Method for producing a stacked structure
Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment...
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7229899 |
Process for the transfer of a thin film
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function...
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7229900 |
Semiconductor device, method of manufacturing thereof, and method of manufacturing base material
It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate...
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7226825 |
Method of fabricating micro-chips
A method of fabricating micro-chips, including: (a) providing a substrate; (b) forming a first single-crystal layer on a top surface of the substrate; (c) forming a second single-crystal layer on a...
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7223672 |
Processes for forming backplanes for electro-optic displays
A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The...
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7219416 |
Method of manufacturing a magnetic element
The present invention provides a composite magnetic body containing metallic magnetic powder and thermosetting resin and having a packing ratio of the metallic magnetic powder of 65 vol % to 90 vol...
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7217639 |
Method of manufacturing a material compound wafer
The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate...
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7217638 |
Wafer back surface treating method and dicing sheet adhering apparatus
Provided is a treatment method of a semiconductor wafer facilitating picking-up of semiconductor chips and preventing contamination by a dicing sheet. A wafer back surface treating method is...
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7208337 |
Method of forming light emitting devices including forming mesas and singulating
A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate,...
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7208346 |
Methods of forming interposers on surfaces of dies of a wafer
A method and apparatus to stencil interposers on a wafer of dies is described. In one embodiment, an interposer stenciling apparatus includes an interposer forming stencil configured to deposit...
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7205211 |
Method for handling semiconductor layers in such a way as to thin same
This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of:
a) obtaining a...
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7202139 |
MOSFET device with a strained channel
An ultra thin MOSFET device structure located on an insulator layer, and a method of forming the ultra thin MOSFET device structure featuring a strained silicon channel located on the underlying...
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7198979 |
Method for manufacturing a stack arrangement of a memory module
A method of stacking semiconductor chips includes providing four semiconductor chips that each include a top surface with central bond pads. Each of the bond pads is electrically coupled to second...
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7192841 |
Method of wafer/substrate bonding
A method of bonding two components by depositing an amorphous and non-hydrogenated intermediate layer ( 2 ) on one of the components ( 1,4 ) and arranging the components ( 1,4 ) in spaced...
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7192843 |
Method of fabricating semiconductor device
The present invention is a method of fabricating a semiconductor device by transferring a semiconductor chip supported on a flexible support film to a mount member by means of a robot arm. This...
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7189304 |
Substrate layer cutting device and method
An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a...
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7185417 |
Method for shaping an air bearing surface of a magnetic head slider
A method for shaping an ABS of a magnetic head slider including a step of holding at least one row bar with a plurality of aligned thin-film magnetic head elements by adhering a first surface of...
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7183177 |
Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and...
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7183137 |
Method for dicing semiconductor wafers
A method is disclosed for dicing a wafer having a base material with a diamond structure. The wafer first undergoes a polishing process, in which a predetermined portion of the wafer is polished...
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7183178 |
Method of manufacturing semiconductor wafer
A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the...
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7183179 |
System and method for hydrogen exfoliation gettering
A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying...
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7183176 |
Method of forming through-wafer interconnects for vertical wafer level packaging
A wafer is provided having through-holes therein to form a through-hole via wafer. A substrate of a sacrificial wafer is provided. The substrate is coated with a polymer having low adhesion to...
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7182234 |
Substrate cutting device and method
An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source...
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7179718 |
Structure and method of manufacturing the same
A method of manufacturing a structure in which a substrate can be removed easily from a structure that has been formed on the substrate by using a film forming technology. The method of...
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7179719 |
System and method for hydrogen exfoliation
A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate,...
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7176102 |
Method for producing SOI wafer and SOI wafer
A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion...
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7176108 |
Method of detaching a thin film at moderate temperature after co-implantation
A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the...
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RE39484 |
Process for the production of thin semiconductor material films
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar...
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7169248 |
Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods
Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods. A method for processing a microfeature workpiece in accordance...
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7166520 |
Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface...
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