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7569431 Semiconductor device and manufacturing method thereof  
A semiconductor device and method of manufacturing the same includes an n − -single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon...
7556977 Semiconductor manufacturing method and semiconductor laser device manufacturing method  
There are provided preflow periods t 11 , t 12 in which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor),...
7517717 Wide dynamic range sensor having a pinned diode with multiple pinned voltages  
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional...
7508011 Semiconductor light generating device  
The semiconductor light generating device comprises a light generating region 3, a first Al X1 Ga 1-X1 N semiconductor (0≦X1≦1) layer 5 and a second Al X2 Ga 1-X2 N semiconductor...
7501666 Method for forming p-type semiconductor region, and semiconductor element  
A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101 , and a GaN buffer film 105 , an undoped GaN film 107 , and a GaN film 109 ...
7485476 Terahertz radiating device based on semiconductor coupled quantum wells  
A method is presented for fabricating a semiconductor device operable to generate a THz spectral range radiation in response to an external field. According to this method, a heterostructure is...
7485485 Method and apparatus for making a MEMS scanner  
Devices are formed on a semiconductor wafer in an interdigitated relationship and are released by deep reactive ion etching. MEMS scanners are formed without a surrounding frame. Mounting pads...
7486437 Apparatus and method for optical amplification in indirect-gap semiconductors  
Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention...
7482190 Micromechanical strained semiconductor by wafer bonding  
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon...
7473570 Method for forming epitaxial layers of gallium nitride-based compound semiconductors  
The present invention relates to a structure and a manufacturing method of epitaxial layers of gallium nitride-based compound semiconductors with less dislocation densities. Surface treatment is...
7459354 Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor  
The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore,...
7396745 Formation of ultra-shallow junctions by gas-cluster ion irradiation  
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
7384808 Fabrication method of high-brightness light emitting diode having reflective layer  
A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a...
7381267 Heteroatomic single-crystal layers  
A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different,...
7361518 Semiconductor element, semiconductor device, and method for fabrication thereof  
A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.
7341787 Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers  
The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system...
7332416 Methods to manufacture contaminant-gettering materials in the surface of EUV optics  
Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface...
7314794 Low-cost high-performance planar back-gate CMOS  
A method of fabricating a high-performance planar back-gate CMOS structure having superior short-channel characteristics and reduced capacitance using processing steps that are not too lengthy or...
7259036 Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products  
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such...
7256426 Rare earth element-doped silicon/silicon dioxide lattice structure  
Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a...
7256062 Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof  
In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer...
7229899 Process for the transfer of a thin film  
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function...
7223641 Semiconductor device, method for manufacturing the same, liquid crystal television and EL television  
A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step...
7208338 Method of manufacturing semiconductor light emitting device  
A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type...
7166485 Superlattice nanocrystal Si-SiO2 electroluminescence device  
A superlattice nanocrystal Si—SiO 2 electroluminescence (EL) device and fabrication method have been provided. The method comprises: providing a Si substrate; forming an initial SiO 2 layer...
7160748 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device  
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by...
7157730 Angled wafer rotating ion implantation  
Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted...
7135387 Method of manufacturing semiconductor element  
A method for stably activating pn-successive layers in a semiconductor element in a short time is disclosed. Pulsed beams, each of which has a pulse shape that is approximately rectangular, are...
7135772 Nitride semiconductor laser  
The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which...
7118928 Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices  
Light-emitting devices having a semiconductor phosphor layer formed by metalorganic chemical vapor deposition (MOCVD). The semiconductor phosphor layer may be any Group III nitride semiconductor...
7078256 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof  
A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the...
7075119 Optical semiconductor device and method of fabricating optical semiconductor device  
In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current...
7056755 P-type nitride semiconductor and method of manufacturing the same  
A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by...
7037743 Semiconductor device and method for producing the same  
A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an...
7030419 Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof  
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for...
6992321 Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials  
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing...
6960486 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material  
A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr 2+ thin film of controllable thickness on the ZnS...
6939728 Method of fabricating silicon emitter with a low porosity heavily doped contact layer  
A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer...
6927080 Structures for analyzing electromigration, and methods of using same  
The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating...
6924163 Semiconductor light emitting device and its manufacturing method  
Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer...
6906353 High speed implanted VCSEL  
A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a...
6878562 Method for shifting the bandgap energy of a quantum well layer  
A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers....
6876686 Method of fabricating active layers in a laser utilizing InP-based active regions  
A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a...
6872967 Nitride-based semiconductor device and manufacturing method thereof  
In the manufacture of a semiconductor laser device, sequentially grown on a sapphire substrate in the following order are a buffer layer, a first undoped GaN layer, a first super lattice defect...
6849473 Semiconductor light-emitting device and method for manufacturing thereof  
In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap...
6829814 Process of making an all-silicon microphone  
A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The...
6824697 Method for fabricating mems and microfluidic devices using smile, latent masking, and delayed locos techniques  
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The...
6812052 Method for fabricating low-temperature polysilicon organic electroluminescent device  
A method for fabricating a low temperature polysilicon organic electroluminescent substrate comprises the following steps: providing a substrate; forming an amorphous silicon layer on the...
6791257 Photoelectric conversion functional element and production method thereof  
An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a...
6756290 Method for the production of a semiconductor device  
A method for making a semiconductor device having a pattern of highly doped regions located some distance apart in a semiconductor substrate and regions of low doping located between the highly...
Matches 1 - 50 out of 248 1 2 3 4 5 >