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8175131 |
Laser media with controlled concentration profile of active laser ions and method of making the same
A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second...
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8173463 |
Method of fabricating a light emitting device with a p-type dopant
Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and...
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8173991 |
Optoelectronic semiconductor chip having a multiple quantum well structure
An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a...
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8159109 |
Microresonator
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an...
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8153456 |
Bifacial solar cell using ion implantation
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
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8119428 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of manufacturing nitride semiconductor light emitting device
An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is...
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8120010 |
Quantum dot electroluminescent device and method for fabricating the same
A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot...
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8114693 |
Method of fabricating solid state gas dissociating device by laser doping
A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a...
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8097891 |
Group III nitride semiconductor light emitting device and method for producing the same
The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1),...
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8090229 |
Method and device for providing electronic circuitry on a backplate
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
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8084282 |
Wafer-level In-P Si bonding for silicon photonic apparatus
Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation...
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8084284 |
Complementary metal oxide semiconductor image sensor and method for fabricating the same
A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a...
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8071403 |
Method of manufacturing liquid crystal display device
A method of manufacturing a liquid crystal display device of the present invention includes a color defect compensation process for compensating for a color defect if it is present in a color...
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8062918 |
Surface treatment to improve resistive-switching characteristics
This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a...
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8053867 |
Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one...
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8049227 |
Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the...
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8026117 |
Semiconductor light emitting device with lateral current injection in the light emitting region
A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include...
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8012783 |
Semiconductor element and method for manufacturing same
The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with...
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8008672 |
Light emitting device
A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second...
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8008686 |
Light emitting diode chip
An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type...
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7993947 |
Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The...
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7989275 |
Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating film, a semiconductor film, an...
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7981707 |
Method for enhancing optical characteristics of multilayer optoelectronic components
The method of the invention consists of implanting ions into the surface of multilayer optical waveguides, in the highly doped layer, in a defined pattern so as to modify the refractive index of...
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7972879 |
Multi-level integrated photonic devices
A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second...
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7972878 |
Quantum dot memory
A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for...
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7968363 |
Manufacture method for ZnO based semiconductor crystal and light emitting device using same
A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity...
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7964868 |
Semiconductor light-emitting device and method of manufacturing the same
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with...
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7964425 |
Method for manufacturing p type gallium nitride based device
A method for manufacturing a p-type gallium nitride-based (GaN) device is disclosed. In accordance with the method, an Mg in an MgNx layer disposed on p-type gallium nitride is diffused into the...
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7960198 |
Method of making a semiconductor device with surge current protection
A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through...
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7951624 |
Method of manufacturing light emitting diode
A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package...
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7943407 |
Method for manufacturing semiconductor laser
A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group...
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7923288 |
Zinc oxide thin film electroluminescent devices
A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in...
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7913195 |
Method for creating mask layout data, apparatus for creating mask layout data, and method for manufacturing semiconductor device
According to mask layout data created for a particular factory facility, transistors constituting a semiconductor device are classified into multiple groups depending on the gate length....
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7901962 |
Method for preparing organic light-emitting diode including two light-emitting layers with two solvents
The present invention relates to a method for preparing an organic light-emitting diode, including: (A) providing a substrate with a first electrode thereon; (B) using a first solution to form a...
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7897497 |
Overvoltage-protected light-emitting semiconductor device, and method of fabrication
A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group...
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7892872 |
Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The...
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7883913 |
Manufacturing method of image sensor of vertical type
A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a...
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7880183 |
Light emitting device having a plurality of light emitting cells and method of fabricating the same
Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal...
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RE42074 |
Manufacturing method of light emitting device
A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming...
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7875559 |
Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a...
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7867791 |
Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction...
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7863067 |
Silicon substrate with reduced surface roughness
The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one...
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7863068 |
Method for making a light emitting diode having a P-N junction doped with one or more luminescent activator ions
A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED...
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7858407 |
Microresonator
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an...
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7833834 |
Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source
A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser...
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7816163 |
Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a...
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7804042 |
Pryometer for laser annealing system compatible with amorphous carbon optical absorber layer
In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a...
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7791166 |
Formation of dummy features and inductors in semiconductor fabrication
A structure and a method for forming the same. The structure includes (a) a substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate...
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7785911 |
Semiconductor laser diode with current restricting layer and fabrication method thereof
Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited...
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7772587 |
Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same
Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based...
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