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8124496 Cable connector assembly with improved printed circuit board  
A cable connector assembly (100) comprises a mating member (3) assembled with a plurality of contacts (33, 34), a printed circuit board (2), a cable (7) having a plurality of wires (71) and a...
8115271 Reducing device performance drift caused by large spacings between active regions  
A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in...
7977202 Reducing device performance drift caused by large spacings between active regions  
A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in...
7968424 Method of implantation  
Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate,...
7951679 Method for fabricating semiconductor device  
First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of...
7709350 Method for manufacturing a semiconductor elemental device  
A method for manufacturing a semiconductor elemental device including an SOI structure in which an SOI layer is laminated, includes the steps of setting transistor forming regions and a device...
7659179 Method of forming transistor using step STI profile in memory device  
A method of forming a memory device includes forming first and second isolation structures on a semiconductor substrate, the first and second isolation structures defining an active region...
7601610 Method for manufacturing a high integration density power MOS device  
A process for the realization of a high integration density power MOS device includes the following steps of: providing a doped semiconductor substrate with a first type of conductivity; forming,...
7566482 SOI by oxidation of porous silicon  
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a...
7550355 Low-leakage transistor and manufacturing method thereof  
A boron ion stream may be used to implant ions, such as boron ions, into the sidewalls of an active area, such as an NFET active area. The boron ion stream has both vertical tilt and horizontal...
7541260 Trench diffusion isolation in semiconductor devices  
A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The...
7429514 Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device  
A sidewall oxidation process for use during the formation of a transistor such as a flash memory cell allows for improved control of a gate oxide profile. The method comprises doping transistor...
7300834 Methods of forming wells in semiconductor devices  
Disclosed herein are methods of forming a well in a semiconductor device, in which a well end point under a trench is formed deeper than other area by well implantation prior to trench filling and...
7244661 Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate  
A method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate is provided. A patterned first dielectric layer is formed on a semiconductor...
7235460 Method of forming active and isolation areas with split active patterning  
A process for forming isolation and active regions, wherein the patterning of an oxidation-barrier active stack is performed separately in the PMOS and NMOS regions. After the active stack is in...
7157340 Method of fabrication of semiconductor device  
A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less...
6949445 Method of forming angled implant for trench isolation  
A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an...
6861320 Method of making starting material for chip fabrication comprising a buried silicon nitride layer  
The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND3+, instead of implanting...
6855618 Radiation hardened semiconductor device  
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region...
6846722 Method for isolating a hybrid device in an image sensor  
The present disclosure relates to a method for fabricating an image sensor capable of improving dark current characteristics. The method includes: forming sequentially a pad oxide layer and a pad...
6790752 Methods of controlling VSS implants on memory devices, and system for performing same  
The present invention is generally directed to various methods of controlling Vss implants on memory devices, and a system for performing same. In one illustrative embodiment, the method comprises...
6706638 Method of forming opening in dielectric layer  
A method of forming openings in the dielectric layer. The method includes an ion implantation step to reduce a lateral etching in a chemical vapor etching step, and to provide a high etching...
6642120 Semiconductor circuit  
A semiconductor circuit is provided which has a high breakdown voltage and is capable of outputting a large current. Field transistors (Q1, Q11) are cross-coupled. The gate of the first field...
6620704 Method of fabricating low stress semiconductor devices with thermal oxide isolation  
A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A...
6583044 Buried channel in a substrate and method of making same  
A buried channel and a method of fabricating a buried channel in a substrate including depositing a layer of masking material onto a surface of a substrate, etching a groove in the masking layer,...
6583018 Method of ion implantation  
An ion implantation method which can accurately control the effective dose amount even in ion implantation at a very low energy. This ion implantation method comprises the steps of carrying out...
6528390 Process for fabricating a non-volatile memory device  
A method for fabricating a semiconductor structure includes growing regions of oxide on a first structure, to form bit-line regions; wherein said semiconductor structure includes a semiconducting...
6482719 Semiconductor field region implant methodology  
An MOS device is provided having a channel-stop implant placed between active regions and beneath field oxides. The channel-stop dopant material is a p-type material of atomic weight greater than...
6426273 Preprocessing method of metal film forming process  
A preprocessing method of a metal film formation process before formation of a BLM film on a resist film of a substrate to be processed, wherein the resist film of substrate to be processed is...
6372607 Photodiode structure  
A circuit that includes an isolation boundary formed to a depth in a substrate defining an active area of the substrate, a primary junction formed in the active area to a primary junction depth in...
6358819 Dual gate oxide process for deep submicron ICS  
An improved dual gate oxide process for dual-gated devices using oxygen ion implantation to vary the thickness of gate oxide layers. The desired layers are identified by photoresist layer...
6342431 Method for eliminating transfer gate sacrificial oxide  
A method of forming a semiconductor device, includes forming a layer of oxide on a semiconductor substrate, forming a layer of silicon nitride on the oxide layer, forming isolation regions in the...
6340624 Method of forming a circuitry isolation region within a semiconductive wafer  
A method of forming a circuitry isolation region within a semiconductive wafer comprises defining active area and isolation area over a semiconductive wafer. Semiconductive wafer material within...
6313006 Method of field implantation  
A method of field implantation. Using a photo-resist layer as a mask, a substrate is implanted with ions to forming a selectively distributed ion field.
6268298 Method of manufacturing semiconductor device  
In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment...
6268266 Method for forming enhanced FOX region of low voltage device in high voltage process  
A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate,...
RE37158 High performance sub-micron P-channel transistor with germanium implant  
Implantation of germanium (45) into a PMOS buried channel to permits the enhancement implant profile (to 45) to be made more shallow. The shallow profile will reduce or eventually solve P-channel...
6194288 Implant N2 into a pad oxide film to mask the active region and grow field oxide without Si3N4 film  
A method whereby the region where the field oxide has to be grown is defined with a layer of photoresist. The present invention teaches the implantation of N2 into the layer of silicon dioxide...
6146976 Method for producing bridged doped zones  
Bridged, doped zones are formed in a semiconductor. A silicon nitride layer is deposited and structured on a semi-conductor region with a predetermined dopant concentration. The structure is...
6133117 Method of forming trench isolation for high voltage device  
A trench isolation structure for high voltage device is provided including a high voltage well, a low voltage well, and trench oxide. The high voltage well is formed first to be the deep junction...
6121115 Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers  
An integrated circuit memory device includes a semiconductor substrate having a memory cell area and a select transistor area. A first field insulation layer is included in the memory cell area,...
6117721 Semiconductor processing method of forming a static random access memory cell and static random access memory cell  
A semiconductor processing method of forming a static random access memory cell having an n-channel access transistor includes, providing a bulk semiconductor substrate; patterning the substrate...
6090682 Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top  
Disclosed are an isolation film of a semiconductor device and a method for fabricating the same, which prevent the isolation film from being damaged due to misalignment when forming a contact hole...
6074933 Integrated circuit fabrication  
Undesirable birds beak pull back due to ion implant damage is alleviated by additional oxide growth.
6048760 Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions  
A method of manufacturing a semiconductor device comprising the steps of masking element areas of a silicon substrate of a first conductivity type with a masking layer; forming a field oxide film...
6013560 Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate  
A semiconductor processing method of forming field oxide regions includes, a) providing a sacrificial pad oxide layer over a semiconductor substrate; b) providing a Gex Siy layer over the pad oxide...
5950095 Semiconductor memory cell fabrication method  
A semiconductor device includes a substrate having an active region between field oxide films, a gate formed on the substrate with a gate oxide therebetween, and a first impurity region formed...
5950096 Process for improving device yield in integrated circuit fabrication  
In the fabrication of an integrated circuit, undesirable bird's beak pull back due to damage caused during ion implantation is alleviated by means of rapid thermal annealing step prior to chemical...
5913136 Process for making a transistor with self-aligned source and drain contacts  
The invention relates to a process for making a transistor with self-aligned contact points and comprises the following steps: formation of multiple layers on a substrate (100) and etching of the...
5804493 Method for preventing substrate damage during semiconductor fabrication  
A method for preventing substrate damage during semiconductor fabrication, comprising, forming a pad oxide layer on the substrate, depositing a polysilicon buffer layer on the pad oxide layer,...
Matches 1 - 50 out of 136 1 2 3 >