Patents in Class 438/443

Matches 1 - 50 out of 171

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Match	Document	Document Title
1	7560389	Method for fabricating semiconductor element A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
2	7524729	Method of manufacturing a semiconductor integrated circuit device having a trench A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in...
3	7494909	Method of manufacturing a chip Provided are a chip, a chip stack, and a method of manufacturing the same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a...
4	7416947	Method of fabricating trench MIS device with thick oxide layer in bottom of trench A trench MIS device includes a thick dielectric layer at the bottom of the trench. The thick dielectric layer can be formed by the deposition or thermal growth of a dielectric material, such as...
5	7393770	Backside method for fabricating semiconductor components with conductive interconnects A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a...
6	7354818	Process for high voltage superjunction termination A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each...
7	7348254	Method of fabricating fin field-effect transistors A method of fabricating a fin field-effect transistor that may enable a reduction in the number of process steps, by forming the fin structure by etching away a predetermined thickness of an...
8	7321141	Image sensor device and manufacturing method thereof A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and...
9	7297599	Method of fabricating semiconductor device A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode,...
10	7256100	Manufacturing method of semiconductor device having trench type element isolation A semiconductor substrate including a first region, a second region larger than the first region and an isolation region is provided. A mask layer is selectively formed on the first and second...
11	7189592	Manufacturable single-chip hydrogen sensor A robust single-chip hydrogen sensor and a method for fabricating such a sensor. By utilizing an interconnect metallization material that is the same or similar to the material used to sense...
12	7183173	Method for forming isolation film in semiconductor device A method for forming an isolation film of a semiconductor device is disclosed which includes forming trenches in a semiconductor substrate, forming a first HDP oxide film in the formed trenches,...
13	7141483	Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow...
14	7141485	Shallow trench isolation structure with low sidewall capacitance for high speed integrated circuits A method for reducing sidewall capacitance by 25% or more in an STI structure is described. A conformal barrier layer is deposited on sloped sidewalls in a shallow trench within a substrate. The...
15	7078312	Method for controlling etch process repeatability Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries...
16	7071076	Method of manufacturing semiconductor device A semiconductor device has an STI oxide film ( 106 ), of which surface is positioned higher than the surface of the silicon substrate ( 100 ) to prevent a pointed portion and a thin film thickness...
17	7064045	Laser based method and device for forming spacer structures for packaging optical reflection devices A method for forming a patterned silicon bearing material, e.g., silicon substrate. The method includes providing a silicon substrate, which has a surface region and a backside region. The method...
18	7045435	Shallow trench isolation method for a semiconductor wafer The present invention relates to a shallow trench isolation method of a semiconductor wafer which fills dielectric material into shallow trenches between components on the surface of the...
19	7013562	Method of using micro-contact imprinted features for formation of electrical interconnects for substrates An imprinting stamp to imprint an opening in a material layer in which the imprint stamp has a coating of a seed material. The seed material is transferred onto the surface within the opening to...
20	6997985	Semiconductor, semiconductor device, and method for fabricating the same Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature...
21	6933187	Method for forming narrow trench structures A method for forming narrow trench structures. A substrate covered by a layer to be defined is provided. A plurality of oxidable first masking islands is formed on the layer to be defined....
22	6897121	Method of removing HDP oxide deposition A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than...
23	6890832	Radiation hardening method for shallow trench isolation in CMOS A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (10 13 to 10 17 ions/cm 2 ) of a large atom group III element, such as B, Al, Ga or In at an...
24	6828209	Methods for manufacturing a semiconductor device including a trench isolation region Embodiments include semiconductor devices and a methods for manufacturing the same that suppress deficiencies in the transistor characteristics. A method for manufacturing a semiconductor device...
25	6797588	Method for manufacturing a semiconductor device having a trench and a thick insulation film at the trench opening A surface of a semiconductor substrate is selectively etched to form a first opening, which serves as the opening of a trench. A USG film is deposited on the first opening. A second opening, the...
26	6768130	Integration of semiconductor on implanted insulator A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic...
27	6723618	Methods of forming field isolation structures Field isolation structures and methods of forming field isolation structures are described. In one implementation, the method includes etching a trench within a monocrystalline silicon substrate....
28	6720233	Process for producing trench insulation in a substrate In a method of producing a trench insulation in a silicon substrate a first silicon-oxide layer is deposited on a front surface of a sequence of layers including the silicon substrate. Then the...
29	6699773	Shallow trench isolation type semiconductor device and method of forming the same A method of forming a shallow trench isolation type semiconductor device comprises forming an etch protecting layer pattern to define at least one active region on a substrate, forming at least one...
30	6682988	Growth of photoresist layer in photolithographic process A method of fabricating a feature of an integrated circuit in a layer of material includes providing a layer of photoresist having a first thickness over the layer of material; forming apertures in...
31	6677223	Transistor with highly uniform threshold voltage Embodiments of the present invention relate to processes utilized in the manufacturing of a semiconductor device having transistors to achieve high uniformity of threshold voltages. The invention...
32	6649489	Poly etching solution to improve silicon trench for low STI profile A method of etch polysilicon adjacent to a recessed STI structure feature is described. A substrate is provided with a dielectric layer thereon and a polysilicon layer on the dielectric layer. A...
33	6642124	Semiconductor device and manufacturing method thereof The present invention provides a semiconductor device that reduces the junction leak current and achieves an improvement in the reliability of the gate oxide film by minimizing divot formation and...
34	6613611	ASIC routing architecture with variable number of custom masks A customizable ASIC routing architecture is provided. The architecture utilizes the uppermost metal layers of an ASIC composed of an array of function blocks for routing among function blocks while...
35	6613639	Forming a semiconductor on implanted insulator A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic...
36	6610580	Flash memory array and a method and system of fabrication thereof In a first aspect of the present invention, a flash memory array is disclosed. The flash memory array comprises a substrate comprising active regions, wherein the active regions are defined by a...
37	6593165	Circuit-incorporating light receiving device and method of fabricating the same A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The...
38	6544839	Semiconductor integrated circuit device and a method of manufacturing the same A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in...
39	6514834	Method of manufacturing a semiconductor device having a low leakage current A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole...
40	6492229	Semiconductor device having reduced field oxide recess and method of fabrication A semiconductor device having reduced field oxide recess and method of fabrication is disclosed. The method of fabricating the semiconductor device begins by performing an HF dip process on a...
41	6482715	Method of forming shallow trench isolation layer in semiconductor device A method of forming a shallow trench isolation layer in a semiconductor device is provided, wherein a first trench and a second trench are formed in an area selected from a semiconductor substrate...
42	6479368	Method of manufacturing a semiconductor device having a shallow trench isolating region A method of manufacturing a semiconductor device, in which the depth of a divot in a shallow trench isolation can be decreased. The method comprises forming a trench in a semiconductor substrate,...
43	6440818	Method of reducing leakage current of a semiconductor wafer A semiconductor wafer includes a silicon substrate, an active area positioned on the silicon substrate, and a field oxide layer positioned on the surface of the silicon substrate surrounding the...
44	6436780	Semiconductor device A number of npn and pnp bipolar transistors are formed in a single chip of silicon, so that some of the transistors have a greater frequency response than others The higher frequency transistors...
45	6429077	Method of forming a lateral diffused metal-oxide semiconductor transistor The present invention provides a method of forming a lateral diffused metal-oxide semiconductor (LD MOS) transistor on a semiconductor wafer. An ion implantation process is performed on a...
46	6420241	Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is...
47	6331470	Process for manufacturing a semiconductor material wafer having power regions dielectrically insulated from circuitry regions A manufacturing process is carried out starting from an SOI type wafer including a top silicon layer and a bottom silicon layer separated from each other by a buried silicon dioxide layer. In the...
48	6331456	Fipos method of forming SOI CMOS structure The present invention discloses a method to form CMOS transistors for high speed and lower power applications. A high energy and low dose phosphorous is implanted in a silicon substrate to...
49	6284626	Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trench With the present invention, a filled isolation trench is fabricated as part of an integrated circuit on a semiconductor wafer using nitrogen implantation into at least one side wall of the...
50	6277675	Method of fabricating high voltage MOS device A method for fabricating a high voltage MOS device. A substrate has a first P-type well region and a N-type well region formed thereon. A field oxide is then formed on the N-well region and...

Matches 1 - 50 out of 171

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