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8183667 |
Epitaxial growth of crystalline material
A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a...
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8173480 |
Image sensor and method for manufacturing the same
An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor...
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8173462 |
Manufacturing method of nitride crystalline film, nitride film and substrate structure
A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is...
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8163575 |
Grown photonic crystals in semiconductor light emitting devices
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The...
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8154050 |
Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same
A semiconductor device in which semiconductor epitaxial layers are embedded in the source/drain regions includes an element formation region formed in the major surface of a semiconductor...
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8154034 |
Method for fabricating vertical light emitting devices and substrate assembly for the same
In a method for fabricating a vertical light emitting device, the separation or lift-off of the substrate from the light emitting diode structure formed thereon is facilitated by forming voids at...
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8137995 |
Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive...
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8133803 |
Method for fabricating semiconductor substrates and semiconductor devices
A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening...
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8129205 |
Solid state lighting devices and associated methods of manufacturing
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium...
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8114691 |
Semiconductor light emitting device having textured structure and method of manufacturing the same
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer...
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8105955 |
Integrated circuit system with carbon and non-carbon silicon
An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region,...
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8101447 |
Light emitting diode element and method for fabricating the same
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to...
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8090229 |
Method and device for providing electronic circuitry on a backplate
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
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8080434 |
Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer
A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and...
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8071404 |
Method for fabricating light emitting device
By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material...
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8044381 |
Light emitting diode (LED)
A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum...
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8039371 |
Reduced defect semiconductor-on-insulator hetero-structures
A semiconductor-on-insulator hetero-structure and a method for fabricating the semiconductor -on-insulator hetero-structure include a crystalline substrate and a dielectric layer located thereupon...
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8030108 |
Epitaxial growth of in-plane nanowires and nanowire devices
Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned...
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8030110 |
Nitride semiconductor light-emitting device and method for fabrication thereof
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a...
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8026156 |
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of...
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8017489 |
Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over...
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7994017 |
Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications
A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown...
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7989238 |
Group III nitride-based compound semiconductor light-emitting device and production method therefor
Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a...
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7985610 |
Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell
A method for forming emitter layer of a solar cell includes preparing a substrate including a first impurity of a first conductive type, diffusing a second impurity of a second conductive type...
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7981705 |
Method of manufacturing a vertical type light-emitting diode
In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate....
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7981709 |
Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the...
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7977706 |
Tri-gate field-effect transistors formed by aspect ratio trapping
Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched...
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7968363 |
Manufacture method for ZnO based semiconductor crystal and light emitting device using same
A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity...
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7968356 |
Light-emitting element with improved light extraction efficiency, light-emitting device including the same, and methods of fabricating light-emitting element and light-emitting device
Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element...
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7968361 |
GaN based semiconductor light emitting device and lamp
A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp...
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7960292 |
Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate
A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO...
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7955880 |
Method of producing semiconductor optical device
A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on...
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7955883 |
Polymer replicated interdigitated electrode array for (bio) sensing applications
Interdigitated electrode arrays are very promising devices for multi-parameter (bio)sensing, for example the label-free detection of nucleic acid hybridization for diagnostic applications. The...
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7947569 |
Method for producing a semiconductor including a foreign material layer
A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material...
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7939448 |
Semiconductor device having electrode and manufacturing method thereof
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate...
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7935554 |
Semiconductor light emitting device and method of manufacturing the same
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a...
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7927977 |
Method of making damascene diodes using sacrificial material
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first...
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7903710 |
Nitride semiconductor light-emitting device
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect...
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7903708 |
Nitride semiconductor light-emitting device and method for fabrication thereof
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a...
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7901968 |
Heteroepitaxial deposition over an oxidized surface
Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the...
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7903707 |
Nitride semiconductor light-emitting device
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect...
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7888779 |
Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate,...
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7875511 |
CMOS structure including differential channel stressing layer compositions
A CMOS structure includes an n-FET device comprising an n-FET channel region and a p-FET device comprising a p-FET channel region. The n-FET channel region includes a first silicon material layer...
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7867846 |
Organic light emitting display (OLED) having a gas vent groove to decrease edge open failures
An Organic Light Emitting Display (OLED) and its fabrication method has a pixel defining layer provided on a first electrode which is formed with a gas vent groove to allow gas to vent when the...
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7858417 |
Dielectric VCSEL gain guide
A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an...
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7858414 |
Nitride semiconductor device and manufacturing method thereof
A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the...
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7838372 |
Methods of manufacturing semiconductor devices and structures thereof
Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region...
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7821017 |
Light-emitting diode and method for fabricating the same
The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an...
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7799592 |
Tri-gate field-effect transistors formed by aspect ratio trapping
Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched...
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7799593 |
Light emitting diode structure and method for fabricating the same
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction...
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