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7625783 |
Semiconductor element and method for manufacturing the same
A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is...
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7560389 |
Method for fabricating semiconductor element
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
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7514285 |
Isolation scheme for reducing film stress in a MEMS device
A method of electrically isolating a MEMS device is provided. In one example, a piezo-resistive pressure sensor having an exposed silicon region undergoes a Local Oxidation of Silicon (LOCOS)...
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7498226 |
Method for fabricating semiconductor device with step gated asymmetric recess
A method for fabricating a semiconductor device with a step gated asymmetric recess is provided. The method includes: forming an organic bottom anti-reflective coating (BARC) layer over a...
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7491623 |
Method of making a semiconductor structure
The invention is directed to a structure and method of forming a structure having a sealed gate oxide layer. The structure includes a gate oxide layer formed on a substrate and a gate formed on the...
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7488647 |
System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device
A system and method is disclosed that prevents the formation of a vertical bird's beak structure in the manufacture of a semiconductor device. A polysilicon filled trench is formed in a substrate...
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7482190 |
Micromechanical strained semiconductor by wafer bonding
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon...
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7465644 |
Isolation region bird's beak suppression
A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern...
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7459758 |
Transistor structure and method for making same
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a...
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7338881 |
Method for manufacturing semiconductor element
A method for manufacturing a semiconductor element includes preparing an SOI layer having a transistor forming area and an element isolation area, forming an oxidation-resistant mask layer on the...
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7250351 |
Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors
Enhanced silicon-on-insulator transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced silicon-on-insulator (SOI) transistors include a thin...
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7244661 |
Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate
A method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate is provided. A patterned first dielectric layer is formed on a semiconductor...
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7232697 |
Semiconductor device having enhanced photo sensitivity and method for manufacture thereof
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a...
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7199023 |
Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
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7192840 |
Semiconductor device fabrication method using oxygen ion implantation
A method of fabricating a semiconductor device having a silicon layer disposed on an insulating film. Oxygen ions are implanted into selected parts of the silicon layer, which are then oxidized to...
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7190036 |
Transistor mobility improvement by adjusting stress in shallow trench isolation
A method of improving transistor carrier mobility by adjusting stress through recessing shallow trench isolation is presented. A trench is formed in a substrate. The trench is filled with a...
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7163869 |
Shallow trench isolation structure with converted liner layer
A STI (shallow trench isolation) structure is formed with a liner layer that is converted from an initial material to a subsequent material. For example, the liner layer is initially comprised of...
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7160772 |
Structure and method for integrating MIM capacitor in BEOL wiring levels
A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level,...
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7144785 |
Method of forming isolation trench with spacer formation
A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through...
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7115480 |
Micromechanical strained semiconductor by wafer bonding
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first...
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7112849 |
Method of preventing semiconductor layers from bending and semiconductor device formed thereby
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one...
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7071076 |
Method of manufacturing semiconductor device
A semiconductor device has an STI oxide film ( 106 ), of which surface is positioned higher than the surface of the silicon substrate ( 100 ) to prevent a pointed portion and a thin film thickness...
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7060579 |
Increased drive current by isotropic recess etch
A method ( 100 ) of forming a transistor includes forming a gate structure ( 108 ) over a semiconductor body and forming recesses ( 112 ) using an isotropic etch using the gate structure as an etch...
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7060551 |
Method of fabricating read only memory and memory cell array
A method of fabricating a read only memory cell array is described. A patterned film is formed over the substrate to define the predetermined positions of bit lines on the substrate and exposing a...
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7053007 |
Method for fabricating semiconductor integrated circuit device
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and...
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7045435 |
Shallow trench isolation method for a semiconductor wafer
The present invention relates to a shallow trench isolation method of a semiconductor wafer which fills dielectric material into shallow trenches between components on the surface of the...
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7038289 |
Deep insulating trench
Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty...
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7026232 |
Systems and methods for low leakage strained-channel transistor
The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor...
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7015115 |
Method for forming deep trench isolation and related structure
According to one embodiment, a structure comprises a substrate and a field oxide region, where the field oxide region has a top surface, and where the top surface of the field oxide region...
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7008850 |
Method for manufacturing a semiconductor device
A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are...
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6991983 |
Method of manufacturing high voltage transistor in flash memory device
Disclosed is a method of manufacturing a high voltage transistor in a flash memory device. The method can prohibit a punch leakage current of an isolation film while satisfying active...
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6977205 |
Method for manufacturing SOI LOCOS MOSFET with metal oxide film or impurity-implanted field oxide
This invention provides a semiconductor device with an element isolation implemented by a method of manufacturing a semiconductor device comprising the steps of: forming a pad oxide film 140 and...
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6958283 |
Method for fabricating trench isolation
A method for forming a trench isolation. A semiconductor substrate with an opening is provided, on which a mask layer is formed. A first insulating layer is conformably formed on the semiconductor...
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6955957 |
Method of forming a floating gate in a flash memory device
Disclosed is a method of forming the floating gate in the flash memory device. After the first polysilicon film is deposited on the semiconductor substrate, the trench is formed on the first...
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6949448 |
Local oxidation of silicon (LOCOS) method employing graded oxidation mask
A method for forming a local oxidation of silicon (LOCOS) isolation region on a silicon substrate. A series of patterned graded oxidation mask layers formed of a material comprising silicon, oxygen...
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6933207 |
Method of forming integrated circuitry
Memory integrated circuitry includes an array of memory cells formed over a semiconductive substrate and occupying area thereover, at least some memory cells of the array being formed in lines of...
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6930018 |
Shallow trench isolation structure and method
Disclosed is a shallow trench isolation (STI) structure and methods of manufacturing the same. The methods eliminate the requirement for design size adjustments (DSA) in manufacturing the STI...
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6924209 |
Method for fabricating an integrated semiconductor component
A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal...
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6900094 |
Method of selective removal of SiGe alloys
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a...
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6894363 |
Semiconductor device using shallow trench isolation and method of fabricating the same
A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided...
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6890832 |
Radiation hardening method for shallow trench isolation in CMOS
A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (10 13 to 10 17 ions/cm 2 ) of a large atom group III element, such as B, Al, Ga or In at an...
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6881645 |
Method of preventing semiconductor layers from bending and semiconductor device formed thereby
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one...
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6861320 |
Method of making starting material for chip fabrication comprising a buried silicon nitride layer
The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND 3 + , instead of implanting...
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6846721 |
Manufacturing method of semiconductor device
A semiconductor device ensuring an isolation of elements by a trench is provided. A method of manufacturing the semiconductor device includes the step of forming a silicon nitride film having an...
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6833328 |
Method for removing a coating from a substrate, and related compositions
A method for selectively removing one or more coatings from the surface of a substrate is described. The coating is treated with an aqueous composition which includes an acid of the formula H x AF...
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6818495 |
Method for forming high purity silicon oxide field oxide isolation region
A method for forming within a silicon semiconductor substrate employed within a microelectronics fabrication a silicon oxide dielectric layer. There is provided a silicon semiconductor substrate....
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6812533 |
SOI based bipolar transistor having a majority carrier accumulation layer as subcollector
An electronic circuit comprises a bipolar transistor that includes a conductive back electrode, an insulator layer over the conductive back electrode and a semiconductor layer of either an n-type...
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6787877 |
Method for filling structural gaps and integrated circuitry
A semiconductor processing method for filling structural gaps includes depositing a substantially boron free silicon oxide comprising material at a first average deposition rate over an exposed...
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6774016 |
Silicon-on-insulator (SOI) substrate and method for manufacturing the same
Disclosed are an SOI substrate and a method for manufacturing the same. The SOI substrate comprises a silicon substrate including an active region defined by a field region. The field region...
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6768130 |
Integration of semiconductor on implanted insulator
A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic...
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