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8178418 Method for fabricating intra-device isolation structure  
A method for fabricating intra-device isolation structure is provided, including providing a semiconductor substrate with a mask layer formed thereover. A plurality of first trenches is formed in...
8030171 Method of forming element isolation film and nonvolatile semiconductor memory  
An element isolation film is formed by filling an oxide in a trench formed in an element isolation region of a semiconductor substrate to thereby form an insulation film for element isolation. A...
7998806 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device includes forming an oxidation film over a first and a second device region, forming an first etching preventing film extending over a first and a...
7994006 Manufacturing method of semiconductor device  
A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer...
7968421 Method for manufacturing SOI structure in desired region of a semiconductor device  
Manufacturing a semiconductor device includes defining bulb-type trenches having spherical portions in a silicon substrate. Oxide layers are formed in surfaces of spherical portions of the...
7960244 Process for the aligned manufacture of electronic semiconductor devices in a SOI substrate  
A process for manufacturing an electronic semiconductor device, wherein a SOI wafer is provided, formed by a bottom layer of semiconductor material, an insulating layer, and a top layer of...
7957330 Failsafe management of periodic communications during system upgrade for a network device  
The invention is directed to techniques for failsafe management of periodic communications between network devices. A first network device, for example, establishes with a second network device a...
7951679 Method for fabricating semiconductor device  
First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of...
7947561 Methods for oxidation of a semiconductor device  
Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a...
7939423 Method for manufacturing nonvolatile semiconductor memory device structure  
A non-volatile semiconductor manufacturing method comprises the steps of making element isolation/insulation films that partitions element-forming regions in a semiconductor substrate; stacking a...
7867871 System and method for increasing breakdown voltage of LOCOS isolated devices  
An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming...
7863145 Method and resulting structure using silver for LCOS devices  
A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor...
7858466 Different-voltage device manufactured by a CMOS compatible process and high-voltage device used in the different-voltage device  
A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at...
7851329 Semiconductor device having EDMOS transistor and method for manufacturing the same  
A semiconductor device having an EDMOS transistor and a method for forming the same are provided. The semiconductor device includes source and drain regions formed separately in a semiconductor...
7816226 Method for forming self-alignment insulation structure  
A method for forming a self-align insulation of a passing gate is disclosed. First, a substrate is provided. A deep trench filled with silicon material and a shallow trench isolation adjacent to...
RE41696 Semiconductor device and manufacturing method thereof  
The present invention provides a semiconductor device that reduces the junction leak current and achieves an improvement in the reliability of the gate oxide film by minimizing divot formation and...
7790541 Method and structure for forming multiple self-aligned gate stacks for logic devices  
A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack...
7736932 Method of manufacturing sensor with photodiode and charge transfer transistor  
A method of manufacturing a photodiode sensor and an associated charge transfer transistor includes forming an insulation region on a substrate, forming the diode on a first side of the insulation...
7709348 Method for manufacturing semiconductor device  
The present invention provides a method for manufacturing a semiconductor device, comprising the steps of preparing a substrate having a quartz support substrate and a silicon layer, forming a base...
7687356 Formation of shallow siGe conduction channel  
A method of forming a silicon germanium conduction channel under a gate stack of a semiconductor device, the gate stack being formed on a silicon layer on an insulating layer, the method including...
7651921 Semiconductor device having a frontside contact and vertical trench isolation and method of fabricating same  
There is a method of forming a contact post and surrounding isolation trench in a semiconductor-on-insulator (SOI) substrate. The method comprises etching a contact hole and surrounding isolation...
7648878 Method for fabricating semiconductor device with recess gate  
A pad oxide layer is formed on a substrate. A pad nitride layer is formed on the pad oxide layer. The pad nitride layer and the pad oxide layer are patterned. Predetermined portions of the...
7645680 Method of manufacturing isolation layer pattern in a semiconductor device and isolation layer pattern using the same  
Disclosed is a method of manufacturing an isolation layer pattern in a semiconductor device and an isolation layer pattern in a semiconductor device. A device at a low voltage device formation...
7625783 Semiconductor element and method for manufacturing the same  
A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is...
7560389 Method for fabricating semiconductor element  
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
7514285 Isolation scheme for reducing film stress in a MEMS device  
A method of electrically isolating a MEMS device is provided. In one example, a piezo-resistive pressure sensor having an exposed silicon region undergoes a Local Oxidation of Silicon (LOCOS)...
7498226 Method for fabricating semiconductor device with step gated asymmetric recess  
A method for fabricating a semiconductor device with a step gated asymmetric recess is provided. The method includes: forming an organic bottom anti-reflective coating (BARC) layer over a...
7491623 Method of making a semiconductor structure  
The invention is directed to a structure and method of forming a structure having a sealed gate oxide layer. The structure includes a gate oxide layer formed on a substrate and a gate formed on the...
7488647 System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device  
A system and method is disclosed that prevents the formation of a vertical bird's beak structure in the manufacture of a semiconductor device. A polysilicon filled trench is formed in a substrate...
7482190 Micromechanical strained semiconductor by wafer bonding  
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon...
7465644 Isolation region bird's beak suppression  
A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern...
7459758 Transistor structure and method for making same  
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a...
7338881 Method for manufacturing semiconductor element  
A method for manufacturing a semiconductor element includes preparing an SOI layer having a transistor forming area and an element isolation area, forming an oxidation-resistant mask layer on the...
7250351 Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors  
Enhanced silicon-on-insulator transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced silicon-on-insulator (SOI) transistors include a thin...
7244661 Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate  
A method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate is provided. A patterned first dielectric layer is formed on a semiconductor...
7232697 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof  
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a...
7199023 Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed  
A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7192840 Semiconductor device fabrication method using oxygen ion implantation  
A method of fabricating a semiconductor device having a silicon layer disposed on an insulating film. Oxygen ions are implanted into selected parts of the silicon layer, which are then oxidized to...
7190036 Transistor mobility improvement by adjusting stress in shallow trench isolation  
A method of improving transistor carrier mobility by adjusting stress through recessing shallow trench isolation is presented. A trench is formed in a substrate. The trench is filled with a...
7163869 Shallow trench isolation structure with converted liner layer  
A STI (shallow trench isolation) structure is formed with a liner layer that is converted from an initial material to a subsequent material. For example, the liner layer is initially comprised of...
7160772 Structure and method for integrating MIM capacitor in BEOL wiring levels  
A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level,...
7144785 Method of forming isolation trench with spacer formation  
A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through...
7112849 Method of preventing semiconductor layers from bending and semiconductor device formed thereby  
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one...
7071076 Method of manufacturing semiconductor device  
A semiconductor device has an STI oxide film (106), of which surface is positioned higher than the surface of the silicon substrate (100) to prevent a pointed portion and a thin film thickness of a...
7060579 Increased drive current by isotropic recess etch  
A method (100) of forming a transistor includes forming a gate structure (108) over a semiconductor body and forming recesses (112) using an isotropic etch using the gate structure as an etch mask....
7060551 Method of fabricating read only memory and memory cell array  
A method of fabricating a read only memory cell array is described. A patterned film is formed over the substrate to define the predetermined positions of bit lines on the substrate and exposing a...
7045435 Shallow trench isolation method for a semiconductor wafer  
The present invention relates to a shallow trench isolation method of a semiconductor wafer which fills dielectric material into shallow trenches between components on the surface of the...
7038289 Deep insulating trench  
Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty...
7026232 Systems and methods for low leakage strained-channel transistor  
The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor...
7015115 Method for forming deep trench isolation and related structure  
According to one embodiment, a structure comprises a substrate and a field oxide region, where the field oxide region has a top surface, and where the top surface of the field oxide region...
Matches 1 - 50 out of 300 1 2 3 4 5 6 >