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7387943 Method for forming layer for trench isolation structure  
A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon...
7368366 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7364981 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7358190 Methods of filling gaps by deposition on materials having different deposition rates  
Methods of forming material in a gap in a substrate include forming a pattern to define a gap on a substrate. A bottom oxide layer is formed on a surface of the substrate and substantially filling...
7358150 Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same  
By forming a non-oxidizable liner in isolation trenches, the creation of compressive stress may be significantly reduced, wherein, in illustrative embodiments, silicon nitride may be used as liner...
7338850 Method for manufacturing device isolation film of semiconductor device  
A method for manufacturing device isolation film of semiconductor device is disclosed. The method utilizes a plasma oxidation of a liner nitride film exposed by etching a liner oxide the film in...
7332409 Methods of forming trench isolation layers using high density plasma chemical vapor deposition  
A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen....
7319062 Trench isolation method with an epitaxially grown capping layer  
A trench isolation method for a semiconductor device, wherein a capping layer formed of an insulating material fills a recess generated at a border edge between an active area and an inactive area....
7314809 Method for forming a shallow trench isolation structure with reduced stress  
A method for forming a shallow trench isolation (STI) structure with reduced stress is described. An amorphous silicon layer is deposited on a trench surface of a shallow trench isolation...
7309646 De-fluoridation process  
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist...
7303951 Method of manufacturing a trench isolation region in a semiconductor device  
A method of manufacturing a semiconductor device for preventing dielectric breakdown of gate electrodes attributable to needle-like protrusions caused inside a trench in the step of forming element...
7297609 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes the steps of sequentially forming a pad oxide layer and a pad nitride layer on a substrate, the pad oxide layer including a first oxide...
7265026 Method of forming a shallow trench isolation structure in a semiconductor device  
An isolation method in a semiconductor device is disclosed. The example method sequentially forms a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride...
7265025 Method for filling trench and relief geometries in semiconductor structures  
A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high...
7250376 Method for fabricating semiconductor integrated circuit device  
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and...
7235459 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7214595 Method of producing semiconductor devices  
A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of:...
7199022 Manufacturing method of semiconductor device  
In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of...
7189662 Methods of forming semiconductor constructions  
The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive...
7176039 Dynamic modification of gap fill process characteristics  
A method for process optimization to extend the utility of the HDP CVD gap fill technique modifies the characteristics of the HDP process (deposition and sputter components) in a dynamic mode in...
7169697 Semiconductor device and manufacturing method of the same  
Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second...
7163869 Shallow trench isolation structure with converted liner layer  
A STI (shallow trench isolation) structure is formed with a liner layer that is converted from an initial material to a subsequent material. For example, the liner layer is initially comprised of...
7160789 Shallow trench isolation and method of forming the same  
A shallow trench isolation (STI) structure and a method of forming the STI structure. The STI structure defines an active region formed with a recess channel transistor. The STI structure includes...
7157351 Ozone vapor clean method  
A method for cleaning and forming an oxide film on a surface, particularly a silicon surface. The surface is initially cleaned and then exposed to ozone vapor, which forms the oxide film on the...
7151043 Method of manufacturing a semiconductor device  
Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field...
7141485 Shallow trench isolation structure with low sidewall capacitance for high speed integrated circuits  
A method for reducing sidewall capacitance by 25% or more in an STI structure is described. A conformal barrier layer is deposited on sloped sidewalls in a shallow trench within a substrate. The...
7122443 Method of fabricating flash memory device  
A method of fabricating a flash memory device is disclosed where a trench formation process and a wall oxide film formation process are performed separately depending on a pattern density, and wall...
7118988 Vertically wired integrated circuit and method of fabrication  
A static random access memory (SRAM) cell structure is created in a three-dimensional format as a vertical stack of wired transistors. These transistors are fabricated from crystalline silicon, and...
7118987 Method of achieving improved STI gap fill with reduced stress  
A shallow trench isolation (STI) structure and method of forming the same with reduced stress to improve charge mobility the method including providing a semiconductor substrate comprising at least...
7115479 Sacrificial annealing layer for a semiconductor device and a method of fabrication  
Numerous embodiments of a method and apparatus for a sacrificial annealing layer are disclosed. In one embodiment, a method of forming a sacrificial annealing layer for a semiconductor device...
7115478 Method of fabricating a semiconductor device and a method of generating a mask pattern  
At least a groove for separating a semiconductor substrate into a first region of a relatively large area and a second region of a relatively small area is formed. An insulating film is formed on...
7112511 CMOS image sensor having prism and method for fabricating the same  
A method for fabricating a CMOS image sensor with a prism includes the steps of: forming a plurality of photodiodes corresponding to respective unit pixels on a substrate; sequentially forming an...
7101771 Spin coating for maximum fill characteristic yielding a planarized thin film surface  
A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with...
7081396 Method for manufacturing device isolation film of semiconductor device  
The present invention discloses method for manufacturing device isolation film wherein a high selectivity slurry containing M x P y O z is used for polishing nitride film to prevent the generation...
7081395 Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials  
A method of forming a strained silicon layer created via a material mis-match with adjacent trench isolation (TI), regions filled with a dielectric layer comprised with either a higher, or lower...
7060588 Semiconductor device using shallow trench isolation and method of fabricating the same  
A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided...
7053007 Method for fabricating semiconductor integrated circuit device  
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and...
7052971 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion...
7049206 Device isolation for semiconductor devices  
Exemplary embodiments of the present invention disclose a semiconductor assembly having at least one isolation structure formed. The semiconductor assembly comprises: a first trench in a...
7046319 Polarizing member, optical member and liquid-crystal display device  
A polarizing member is constituted by an absorption type polarizing film, and one polymer material layer or two or more polymer material layers provided on one or both of opposite surfaces of the...
7022584 Method of manufacturing a shallow trench isolation structure  
A semiconductor device is improved in reliability by suppressing the electric-field concentration at a top edge of a trench or the leak current at a bottom edge thereof. A first thermal oxide film...
7022565 Method of fabricating a trench capacitor of a mixed mode integrated circuit  
A method of fabricating a trench capacitor of a mixed mode integrated circuit includes forming shallow trench isolation regions for isolating active/passive devices on a semiconductor substrate....
7015116 Stress-relieved shallow trench isolation (STI) structure and method for forming the same  
A shallow trench isolation (STI) structure in a semiconductor substrate and a method for forming the same are provided. A trench is formed in a semiconductor substrate. A first dielectric layer is...
6998326 Method for manufacturing shallow trench isolation in semiconductor device  
The method for manufacturing a shallow trench isolation (STI) in a semiconductor device with an enhanced gap-fill property and without a detrimental effect of fluorine by introducing a two-stage...
6991994 Method of forming rounded corner in trench  
A method for forming a trench having rounded corners in a semiconductor device comprises providing a substrate; forming a first pad oxide layer, a first silicon nitride layer, and a first oxide...
6984569 Shallow trench isolation (STI) region with high-K liner and method of formation  
A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being...
6972242 Methods to fabricate semiconductor devices  
Semiconductor device fabrication methods are disclosed. According to one example, a method includes forming a pad oxide layer and a nitride layer sequentially on a silicon substrate, and forming a...
6967141 Method of manufacturing a semiconductor integrated circuit device having a trench  
A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in...
6964913 Method for forming floating gate in flash memory device  
The present invention is provided to form a floating gate of a flash memory device capable of restricting a thickness of a buffer oxide film to a thickness less than 50 Å to minimize increment in...
6964905 Semiconductor device and method of manufacturing therefor  
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of: a trench; a silicon oxide film formed on the inner...
Matches 1 - 50 out of 357 1 2 3 4 5 6 7 8 >