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7402500 Methods of forming shallow trench isolation structures in semiconductor devices  
Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer...
7402499 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element...
7402498 Methods of forming trench isolation regions  
The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one...
7402473 Semiconductor device and process for producing the same  
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any...
7399679 Narrow width effect improvement with photoresist plug process and STI corner ion implantation  
A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A...
7396739 Method for integrating an electronic component or similar into a substrate  
A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete...
7396729 Methods of forming semiconductor devices having a trench with beveled corners  
A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of...
7393756 Method for fabricating a trench isolation structure having a high aspect ratio  
A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the...
7393755 Dummy fill for integrated circuits  
A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical...
7393751 Semiconductor structure including laminated isolation region  
A semiconductor structure and a related method for fabrication thereof include an isolation region located within an isolation trench within a semiconductor substrate. The isolation region...
7381267 Heteroatomic single-crystal layers  
A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different,...
7375004 Method of making an isolation trench and resulting isolation trench  
A method of forming and resulting isolation region, which allows for densification of an oxide layer in the isolation region. One exemplary embodiment of the method includes the steps of forming a...
7371658 Trench isolation structure and a method of manufacture therefor  
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure...
7368800 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368366 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368365 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7364981 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7364975 Semiconductor device fabrication methods  
Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active...
7361572 STI liner modification method  
A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed...
7358190 Methods of filling gaps by deposition on materials having different deposition rates  
Methods of forming material in a gap in a substrate include forming a pattern to define a gap on a substrate. A bottom oxide layer is formed on a surface of the substrate and substantially filling...
7358150 Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same  
By forming a non-oxidizable liner in isolation trenches, the creation of compressive stress may be significantly reduced, wherein, in illustrative embodiments, silicon nitride may be used as liner...
7358144 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes forming first, second, and third device structures in a semiconductor substrate. Each device structure includes a first film, a second film...
7354818 Process for high voltage superjunction termination  
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each...
7348256 Methods of forming reduced electric field DMOS using self-aligned trench isolation  
A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first...
7344942 Isolation regions for semiconductor devices and their formation  
A hard mask layer is formed and patterned overlying a semiconductor substrate of a semiconductor device. The patterned hard mask layer exposes two or more areas of the substrate for future...
7332409 Methods of forming trench isolation layers using high density plasma chemical vapor deposition  
A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen....
7332408 Isolation trenches for memory devices  
Methods and apparatus are provided. A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug...
7329586 Gapfill using deposition-etch sequence  
Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are...
7320926 Shallow trench filled with two or more dielectrics for isolation and coupling for stress control  
A method for forming shallow trenches having different trench fill materials is described. A stop layer is provided on a substrate. A plurality of trenches is etched through the stop layer and into...
7319062 Trench isolation method with an epitaxially grown capping layer  
A trench isolation method for a semiconductor device, wherein a capping layer formed of an insulating material fills a recess generated at a border edge between an active area and an inactive area....
7297609 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes the steps of sequentially forming a pad oxide layer and a pad nitride layer on a substrate, the pad oxide layer including a first oxide...
7294555 Method of forming trench in semiconductor device using polish stop layer and anti-reflection coating  
A method of forming a trench in a semiconductor device includes forming a polish stop layer on a semiconductor substrate. The polish stop layer and the semiconductor substrate are then etched to...
7279394 Method for forming wall oxide layer and isolation layer in flash memory device  
Disclosed herein are methods for forming wall oxide films in flash memory devices and methods for forming isolation films. After trenches are formed in the substrate, an ISSG (In-Situ Steam...
7279393 Trench isolation structure and method of manufacture therefor  
The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing an integrated circuit including the trench...
7273796 Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry  
A method of fabricating integrated circuitry includes depositing a spin-on-dielectric over a semiconductor substrate. The spin-on-dielectric comprises a polysilazane. Only some of the polysilazane...
7273795 Method for forming a trench element separation region in a semiconductor substrate  
A semiconductor device having a trench element separation region is disclosed. A pad oxide film ( 2 ), and a silicon nitride film ( 3 ) may be formed on a semiconductor substrate ( 1 ). A trench (...
7273792 Semiconductor device and fabricating method thereof  
A semiconductor device including a semiconductor substrate, a device isolation region formed by filling a trench in the semiconductor substrate with dielectric material and defining device regions...
7271074 Trench insulation in substrate disks comprising logic semiconductors and power semiconductors  
Disclosed is a layer arrangement ( 4 b, 5 b, 9 b, 10, 9 a, 5 a, 4 a ) within an insulating trench, which insulates circuits with little distortion while being suitable for electrically...
7268057 Methods of filling openings with oxide, and methods of forming trenched isolation regions  
The invention includes methods in which oxide is formed within openings in a three-step process. A first step is deposition of oxide under a pressure of greater than 15 mTorr. A second step is...
7265025 Method for filling trench and relief geometries in semiconductor structures  
A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high...
7262111 Method for providing a deep connection to a substrate or buried layer in a semiconductor device  
A system and method is disclosed for providing a deep connection to a substrate or buried layer of a semiconductor device. Three shallow trenches are etched halfway through a layer of epitaxial...
7262110 Trench isolation structure and method of formation  
In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another...
7259078 Method for forming isolation layer in semiconductor memory device  
Disclosed herein is a method for forming an isolation film of a semiconductor memory device. According to the disclosure, in a pre-treatment cleaning process performed before a tunnel oxide film is...
7235458 Method of forming an element isolation film of a semiconductor device  
Disclosed herein is a method of forming an element isolation film of a semiconductor device. An aluminum oxide film of a high wet etch rate is used as a pad oxide film, a trench is formed, and top...
7229896 STI process for eliminating silicon nitride liner induced defects  
The present invention discloses an improved shallow trench isolation process. A semiconductor substrate having a pad oxide disposed thereon and a pad nitride disposed directly on the pad oxide is...
7229895 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7214596 Method for the fabrication of isolation structures  
A method for manufacturing insulating structures in a semiconductor substrate includes forming a first insulating layer on the semiconductor substrate, forming a stop layer on the first insulating...
7214595 Method of producing semiconductor devices  
A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of:...
7208391 Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films  
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation...
7205240 HDP-CVD multistep gapfill process  
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
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