Patents in Class 438/424

Matches 1 - 50 out of 1324

Match	Document	Document Title
1	7622769	Isolation trench A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, an oxygen barrier is deposited into the...
2	7622369	Device isolation technology on semiconductor substrate A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon,...
3	7618857	Method of reducing detrimental STI-induced stress in MOSFET channels A method for reducing STI processing induced stress on a substrate during fabrication of a MOSFET. The method includes providing a substrate, wells (including dopants), and STIs in an upper layer...
4	7612427	Apparatus for confining inductively coupled surface currents A deep n-well is formed beneath the area of an inductor coil. The use of a deep n-well lessens the parasitic capacitance by placing a diode in series with the interlayer dielectric cap. The deep...
5	7611980	Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n...
6	7611963	Method for forming a multi-layer shallow trench isolation structure in a semiconductor device A method for forming a multi-layer shallow trench isolation structure in a semiconductor device is described. In one embodiment, the method includes etching a shallow trench in a silicon substrate...
7	7611962	Method for fabricating semiconductor device A method for fabricating a semiconductor device can prevent a leakage current and the decrease of threshold voltage by rounding corners of a trench. The method may include the steps of forming a...
8	7608534	Interconnection of through-wafer vias using bridge structures Bridge structures provide a surface on which to form interconnections to components through through-hole vias. The bridge structures at least partially, and preferably fully, span the gap between...
9	7608519	Method of fabricating trench isolation of semiconductor device In a method of fabricating a trench isolation structure of a semiconductor device, excellent gap filling properties are attained, without the generation of defects. In one aspect, the method...
10	7605025	Methods of forming MOSFETS using crystalline sacrificial structures A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate...
11	7601609	Method for manufacturing device isolation film of semiconductor device A method for manufacturing device isolation film of semiconductor device is disclosed. The method utilizes a plasma oxidation of a liner nitride film exposed by etching a liner oxide the film in...
12	7601608	Memory array buried digit line A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
13	7601607	Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in...
14	7601582	Method for manufacturing a semiconductor device having a device isolation trench A method for manufacturing a semiconductor device includes forming a semiconductor substrate to have a SOI structure by an epitaxial process for forming a gate while forming an insulating film...
15	7601576	Method for fabricating semiconductor device The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12 , and a silicon nitride film 14 having a...
16	7598177	Methods of filling trenches using high-density plasma deposition (HDP) Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
17	7598155	Method of manufacturing an overlay mark A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two...
18	7598151	Semiconductor device fabrication method According to the present invention, there is provided a semiconductor device fabrication method having: coating a semiconductor substrate with a silazane perhydride polymer solution prepared by...
19	7595258	Overlay vernier of semiconductor device and method of manufacturing the same After a mother vernier pattern is formed in a scribe region of a semiconductor substrate, a child vernier pad is formed on the inner region of a mother vernier, and a child vernier is formed on the...
20	7595254	Method of manufacturing a semiconductor device Embodiments relate to a method for manufacturing a semiconductor device, which may reduce damage due to stress of an STI bottom corner during an ion implantation and annealing being subsequent...
21	7595253	Method of forming the semiconductor device Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling...
22	7595252	Method of manufacturing a semiconductor memory device A method of manufacturing a semiconductor device comprises providing a semiconductor substrate, forming trenches in predetermined regions of the semiconductor substrate, forming isolation...
23	7595224	Method for manufacturing integrated circuit In a method for manufacturing a light detector that is provided with an apertured part for incident light on an upper structural layer stack laminated on a semiconductor substrate, a polyimide...
24	7595010	Method for producing a doped nitride film, doped oxide film and other doped films Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film...
25	7589028	Hydroxyl bond removal and film densification method for oxide films using microwave post treatment Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various...
26	7585746	Process integration scheme of SONOS technology In an non-limiting example, we provide a substrate having a cell region, and non-cell regions. We form a tunneling dielectric layer, a charge storing layer, a top insulating layer (e.g., ONO), over...
27	7585745	Semiconductor device and a method of manufacturing the same A technique is provided which permits formation within a single chip both a field effect transistor of high reliability capable of suppressing the occurrence of a crystal defect and a field effect...
28	7585744	Method of forming a seal for a semiconductor device In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal...
29	7582523	Method of manufacturing semiconductor device including insulated-gate field-effect transistors A method of manufacturing a semiconductor device including MOS transistors is disclosed. N-type and p-type semiconductor films are formed respectively above first and second surface regions of a...
30	7579256	Method for forming shallow trench isolation in semiconductor device using a pore-generating layer A method for forming shallow trench isolation in a semiconductor device including forming a pad oxide, a pad nitride, and a pore-generating layer on an entire surface of a semiconductor substrate...
31	7579255	Semiconductor device and method for isolating the same The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one...
32	7575992	Method of forming micro patterns in semiconductor devices A method of forming a micro pattern in a semiconductor device is disclosed. An oxide film mask is divided into a cell oxide film mask and a peri oxide film mask. Therefore, a connection between the...
33	7575981	Method for fabricating isolation layer in semiconductor device A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer...
34	7575972	Method of manufacturing nonvolatile memory device A method of manufacturing a nonvolatile memory device is disclosed. The method includes the steps of forming a tunnel oxide layer, a first conductive layer for a floating gate, and a hard mask...
35	7572713	Method of fabricating semiconductor device with STI structure A semiconductor device such as a flash memory includes a semiconductor substrate having a surface, and a plurality of trenches formed in the substrate so as to be open at the surface of the...
36	7572712	Method to form selective strained Si using lateral epitaxy Embodiments for FET devices with stress on the channel region by forming stressor regions under the source/drain regions or the channel region and forming a selective strained Si using lateral...
37	7563690	Method for forming shallow trench isolation region A method for forming a shallow trench isolation (STI) structure is provided. A pad oxide layer and a nitride silicon layer are formed on a provided substrate sequentially. The pad oxide layer, the...
38	7563689	Method for fabricating nonvolatile memory device A method for fabricating a nonvolatile memory device includes forming a gate insulation layer, a first gate conductive layer, a first sacrificial layer, and a second sacrificial layer over a...
39	7560358	Method of preparing active silicon regions for CMOS or other devices A method of preparing active silicon regions for CMOS or other devices includes providing a structure including a silicon substrate ( 210, 410 ) having formed thereon first and second silicon...
40	7560357	Method for creating narrow trenches in dielectric materials A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls...
41	7557415	Trench isolation type semiconductor device and related method of manufacture A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an...
42	7557048	Methods of forming semiconductor constructions The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive...
43	7553741	Manufacturing method of semiconductor device Even if the insulated isolation structure which makes element isolation using partial and full isolation combined use technology is manufactured, the manufacturing method of a semiconductor device...
44	7553740	Structure and method for forming a minimum pitch trench-gate FET with heavy body region A field effect transistor is formed as follows. Openings are formed in a masking layer extending over a surface of a silicon region. A trench is formed in the silicon region through each opening in...
45	7550363	Method of fabricating a semiconductor device having first and second trenches using non-concurrently formed hard mask patterns A semiconductor device comprising a trench device isolation layer and a method for fabricating the semiconductor device are disclosed. The method comprises forming a plurality of first trenches on...
46	7547616	Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid...
47	7547610	Method of making a semiconductor device comprising isolation trenches inducing different types of strain By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted...
48	7544592	Method for increasing etch rate during deep silicon dry etch A method of increasing etch rate during deep silicon dry etch by altering the geometric shape of the etch mask is presented. By slightly altering the shape of the etch mask, the etch rate is...
49	7541629	Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process A method and structure for reducing leakage currents in integrated circuits based on a direct silicon bonding (DSB) fabrication process. After recessing a top semiconductor layer and an underlying...
50	7541260	Trench diffusion isolation in semiconductor devices A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The...

Matches 1 - 50 out of 1324

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