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7416956 Self-aligned trench filling for narrow gap isolation regions  
Self-aligned trench filling is used to isolate devices in high-density integrated circuits. A deep, narrow trench isolation region is formed in a substrate between devices. The trench region...
7416955 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first...
7416948 Trench FET with improved body to gate alignment  
A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. Each trench is partially filled with one or more materials. A dual-pass...
7413960 Method of forming floating gate electrode in flash memory device  
A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be...
7413959 Semiconductor device including a planarized surface and method thereof  
A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The...
7410891 Method of manufacturing a superjunction device  
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered...
7410858 Isolation structure configurations for modifying stresses in semiconductor devices  
An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The...
7407864 Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same  
Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the...
7402886 Memory with self-aligned trenches for narrow gap isolation regions  
Self-aligned trench filling is used to isolate devices in high-density integrated circuits. A deep, narrow trench isolation region is formed in a substrate between devices. The trench region...
7402499 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element...
7402498 Methods of forming trench isolation regions  
The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one...
7402466 Strained silicon CMOS on hybrid crystal orientations  
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a...
7400010 Semiconductor device and method of manufacturing the same  
A semiconductor device including a semiconductor substrate having trenches oriented in a predetermined direction; a gate insulating film overlaying the semiconductor substrate interposed between...
7396739 Method for integrating an electronic component or similar into a substrate  
A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete...
7396738 Method of forming isolation structure of flash memory device  
A method of forming a semiconductor memory device includes providing a semiconductor substrate having a cell region and a peripheral region. A gate dielectric layer is formed over the semiconductor...
7396737 Method of forming shallow trench isolation  
A method of manufacturing a semiconductor device including forming a pad oxide layer on a semiconductor substrate, forming a spacer oxide layer pattern on sidewalls of the pad oxide layer, and...
7396728 Methods of improving drive currents by employing strain inducing STI liners  
A method forms a semiconductor device comprising isolation structures that selectively induce strain into active regions of NMOS and PMOS devices. Form a hard mask layer over a semiconductor body....
7393789 Protective coating for planarization  
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed,...
7393756 Method for fabricating a trench isolation structure having a high aspect ratio  
A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the...
7390716 Method of manufacturing flash memory device  
A method of manufacturing a flash memory device. An etch process for controlling the effective field height of isolation layers is performed using a dry etch process on condition that an excessive...
7390701 Method of forming a digitalized semiconductor structure  
A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate...
7387943 Method for forming layer for trench isolation structure  
A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon...
7375016 Method for fabricating semiconductor device  
Disclosed herein is a method for fabricating a memory device. According to the present invention, during an etching process for forming a recess gate region, a device isolation film is etched using...
7375004 Method of making an isolation trench and resulting isolation trench  
A method of forming and resulting isolation region, which allows for densification of an oxide layer in the isolation region. One exemplary embodiment of the method includes the steps of forming a...
7371658 Trench isolation structure and a method of manufacture therefor  
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure...
7371657 Method for forming an isolating trench with a dielectric material  
The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.
7371655 Method of fabricating low-power CMOS device  
A low-power CMOS device can be fabricated by forming a shallow trench on a silicon substrate using a gate mask and negative photoresist. This enables an extremely low profile for a junction after...
7371654 Manufacturing method of semiconductor device with filling insulating film into trench  
Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of...
7368365 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
7368364 Method for manufacturing element isolation structural section  
A plurality of element forming regions and an element isolation structural section forming region which separates the plurality of element forming regions from one another, are set to a substrate....
7368363 Method of manufacturing semiconductor device and method of treating semiconductor surface  
A method of manufacturing a semiconductor device includes the steps of: exposing a semiconductor surface of a substrate; annealing the substrate in a hydrogen atmosphere at a hydrogen pressure...
7368353 Trench power MOSFET with reduced gate resistance  
A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.
7368346 Method for forming gate structure in flash memory device  
Device isolation insulation layers passing through an insulation layer and a substrate, are formed, and a portion of them is removed. The insulation layer is removed. A gate oxide layer and a first...
7364980 Manufacturing method of semiconductor substrate  
Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a...
7364975 Semiconductor device fabrication methods  
Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active...
7361572 STI liner modification method  
A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed...
7361571 Method for fabricating a trench isolation with spacers  
A method for forming a shallow trench isolation (STI) in a semiconductor device, is presented. In one embodiment, the method includes successively forming a pad oxide and a pad nitride on a silicon...
7358588 Trench isolation type semiconductor device which prevents a recess from being formed in a field region  
A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type...
7358190 Methods of filling gaps by deposition on materials having different deposition rates  
Methods of forming material in a gap in a substrate include forming a pattern to define a gap on a substrate. A bottom oxide layer is formed on a surface of the substrate and substantially filling...
7354786 Sensor element with trenched cavity  
A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity....
7351661 Semiconductor device having trench isolation layer and a method of forming the same  
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a...
7351643 Method of manufacturing a semiconductor device  
Even though photolithography with a diameter of 0.20 μm or less is employed, a contact hole having a tapered shape with a required width including a positioning tolerance can be formed in a...
7351642 Deglaze route to compensate for film non-uniformities after STI oxide processing  
A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the...
7348256 Methods of forming reduced electric field DMOS using self-aligned trench isolation  
A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first...
7348255 Semiconductor device and method for fabricating a semiconductor device  
A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers...
7348254 Method of fabricating fin field-effect transistors  
A method of fabricating a fin field-effect transistor that may enable a reduction in the number of process steps, by forming the fin structure by etching away a predetermined thickness of an...
7348252 Method of forming silicon-on-insulator wafer having reentrant shape dielectric trenches  
A method for forming a bonded SOI wafer is provided in which a first wafer having a single-crystal semiconductor region has a first dielectric layer disposed at an outer surface of the first wafer...
7348189 Field transistor monitoring pattern for shallow trench isolation defects in semiconductor device  
A field transistor monitoring pattern has two active areas, i.e., a source region and a drain region, spaced apart from each other by an STI area intervening therebetween. The STI area is generally...
7344996 Helium-based etch process in deposition-etch-deposition gap fill  
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced...
7344942 Isolation regions for semiconductor devices and their formation  
A hard mask layer is formed and patterned overlying a semiconductor substrate of a semiconductor device. The patterned hard mask layer exposes two or more areas of the substrate for future...
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