Matches 1 - 50 out of 160 1 2 3 4 >
Match Document Document Title
7622359 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a...
7605443 Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods  
The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance...
7605025 Methods of forming MOSFETS using crystalline sacrificial structures  
A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate...
7602038 Damascene structure having a reduced permittivity and manufacturing method thereof  
A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier...
7585744 Method of forming a seal for a semiconductor device  
In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal...
7585743 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method  
A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming...
7579255 Semiconductor device and method for isolating the same  
The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one...
7560344 Semiconductor device having a pair of fins and method of manufacturing the same  
Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading...
7507634 Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment  
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor...
7504699 Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections  
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
7482261 Interconnect structure for BEOL applications  
A semiconductor interconnect structure is provided that includes a new capping layer/dielectric material interface which is embedded inside the dielectric material. In particular, the new interface...
7439092 Thin film splitting method  
A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding...
7422940 Layer arrangement  
A process for producing a layer arrangement, in which a plurality of electrically conductive structures are formed on a substrate, a first electrically insulating layer is formed on the plurality...
7396739 Method for integrating an electronic component or similar into a substrate  
A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete...
7396736 Magnetic sensor of very high sensitivity  
A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of...
7394144 Trench semiconductor device and method of manufacturing it  
Consistent with an example embodiment, a reduced surface field effect type (RESURF) semiconductor device is manufactured having a drift region over a drain region. Trenches are formed through...
7378306 Selective silicon deposition for planarized dual surface orientation integration  
A semiconductor process and apparatus provide a planarized hybrid substrate ( 225 ) having a more uniform polish surface ( 300 ) by thickening an SOI semiconductor layer ( 210 ) in relation to a...
7371653 Metal interconnection structure of semiconductor device and method of forming the same  
Provided is a metal interconnection structure of a semiconductor device, having: a lower metal layer disposed on an insulating layer formed on a semiconductor device; a contact plug disposed on the...
7364964 Method of fabricating an interconnection layer above a ferroelectric capacitor  
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H 2 attack without damaging the function of an interlayer insulating film covering...
7358148 Adjustable self-aligned air gap dielectric for low capacitance wiring  
An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent...
7351648 Methods for forming uniform lithographic features  
Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first...
7332406 Air gap interconnect structure and method  
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is...
7326603 Semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device  
A semiconductor device includes a semiconductor substrate that has an oxide film selectively formed on a part thereof; a semiconductor layer that is formed on the oxide film by epitaxial growth; a...
7300823 Apparatus for housing a micromechanical structure and method for producing the same  
Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a...
7297593 Method of manufacturing a floating gate of a flash memory device  
A method of forming a floating gate of a flash memory device wherein a hard mask nitride film is stripped using two or more etching steps. Accordingly, a seam can be prevented when depositing a...
7294568 Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures  
A method of forming air gaps in the interconnect structure of an integrated circuit device. The air gaps may be formed by depositing sacrificial layer over a dielectric layer and then depositing a...
7294536 Process for manufacturing an SOI wafer by annealing and oxidation of buried channels  
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the...
7285474 Air-gap insulated interconnections  
Air-gap insulated interconnection structures and methods of fabricating the structures, the methods including: forming a dielectric layer on a substrate; forming a capping layer on a top surface of...
7282423 Method of forming fet with T-shaped gate  
An FET has a T-shaped gate. The FET has a halo diffusion self-aligned to the bottom portion of the T and an extension diffusion self aligned to the top portion. The halo is thereby separated from...
7256077 Method for removing a semiconductor layer  
A method of forming a semiconductor device includes forming a first layer over a semiconductor substrate and forming a second layer over the first layer. The second layer includes silicon and has...
7235456 Method of making empty space in silicon  
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor...
7229894 Active cell isolation body of a semiconductor device and method for forming the same  
An active cell isolation body of a semiconductor device and a method for forming the same are disclosed. An example active cell isolation body of a semiconductor device includes a trench with a...
7169664 Method of reducing wafer contamination by removing under-metal layers at the wafer edge  
According to the present invention, a metal and a barrier material, such as copper and a tantalum-based barrier material, are effectively removed from the wafer edge and especially from the bevel...
7132348 Low k interconnect dielectric using surface transformation  
Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure. One embodiment...
7105420 Method to fabricate horizontal air columns underneath metal inductor  
A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the...
7101770 Capacitive techniques to reduce noise in high speed interconnections  
Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. The present invention offers an...
7094682 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7091611 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
7078352 Methods for selective integration of airgaps and devices made by such methods  
A method for the production of airgaps in a semiconductor device and device produced therefrom. The formation of airgaps is accomplished, in part, by chemically and/or mechanically changing the...
7071091 Method of forming air gaps in a dielectric material using a sacrificial film  
A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air...
7049219 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7045468 Isolated junction structure and method of manufacture  
A MOSFET structure in which the channel region is contiguous with the semiconductor substrate while the source and drain junctions are substantially isolated from the substrate, includes a...
7045382 Method for producing micromechanic sensors and sensors produced by said method  
Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are...
7041571 Air gap interconnect structure and method of manufacture  
A dual layer of polymeric material is deposited with a base layer and top layer resist onto an integrated circuit structure with topography. The base layer planarizes the surface and fills in the...
7037851 Methods for selective integration of airgaps and devices made by such methods  
Method for the production of airgaps in a semiconductor device, the semiconductor device comprising a stack of layers, the stack of layers comprising at least one iteration of a sub-stack of layers.
7033927 Apparatus and method for thermal isolation, circuit cooling and electromagnetic shielding of a wafer  
The disclosure relates to method and apparatus for isolating sensitive regions of a semiconductor device by providing a thermal path or an electromagnetic shield. The thermal path may include vias...
7022582 Microelectronic process and structure  
The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of: a. applying a layer of a dielectric ( 2 ) which is to be patterned...
6984577 Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers  
A damascene interconnect that reduces interconnect intra-layer capacitance and/or inter-layer capacitance is provided. The damascene interconnect structure has air gaps between metal lines and/or...
6955997 Laser thermal annealing method for forming semiconductor low-k dielectric layer  
A method of manufacturing a semiconductor device, including depositing a first layer of dielectric material onto the device, laser thermal annealing a surface of the first layer, and depositing a...
6949476 Method of creating shielded structures to protect semiconductor devices  
An apparatus on a wafer, comprising: a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising: one or more base frames, a fourth metal layer of...
Matches 1 - 50 out of 160 1 2 3 4 >