Matches 1 - 38 out of 38
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7396735 Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same  
A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a...
7223671 Chemical conversion film of tantalum or niobium, method for forming the same and electrolytic capacitor using the same  
The present invention provides an electrolytic capacitor that operates stably even when used for a long period of time under severe conditions, and forms an intermediate composition portion of...
7179716 Method of forming a metal-containing layer over selected regions of a semiconductor substrate  
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
7116573 Switching element method of driving switching element rewritable logic integrated circuit and memory  
A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with...
7084043 Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor  
A method for producing a silicon-on-insulator layer structure on a silicon surface with any desired geometry can locally produce the silicon-on-insulator structure. The method includes formation of...
7060630 Method of forming isolation film of semiconductor device  
Disclosed is a method of forming the isolation film in the semiconductor device. The method comprises the steps of sequentially forming a pad oxide film and a pad nitride film on a silicon...
6838354 Method for forming a passivation layer for air gap formation  
Dummy features ( 64, 65, 48 a, 48 b ) are formed within an interlevel dielectric layer ( 36 ). Passivation layers ( 32 and 54 ) are formed by electroless deposition to protect the underlying...
6835633 SOI wafers with 30-100 &angst buried oxide (BOX) created by wafer bonding using 30-100 &angst thin oxide as bonding layer  
A method of fabricating a SOI wafer having a gate-quality, thin buried oxide region is provided. The wafer is fabricating by forming a substantially uniform thermal oxide on a surface of a...
6673693 Method for forming a trench in a semiconductor substrate  
A method for forming a trench in a semiconductor substrate includes configuring a mask on the substrate. The mask has a window in which a substrate surface is uncovered. The substrate is...
6664169 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus  
In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first...
6656806 SOI structure and method of producing same  
A Silicon On Insulator (SOI) structure and method of producing an SOI structure that can prevent a short circuit between a Local Inter-Connect (LIC) and a well in the SOI structure is disclosed....
6641662 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same  
A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO 3 half-wave plate, comprises ion implanting a bulk...
6602757 Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI  
A silicon-on-insulator substrate having improved thickness uniformity as well as a method of fabricating the same is provided. Specifically, improved thickness uniformity of a SOI substrate is...
6559069 Process for the electrochemical oxidation of a semiconductor substrate  
In a process for the electrochemical oxidation of a semiconductor substrate that has recesses, such as for example, capacitor trenches or mesopores, formed in a silicon surface region, self-limited...
6515845 Method for preparing nanoporous carbon materials and electric double-layer capacitors using them  
Disclosed herein is the fabrication method of producing nanoporous carbon materials with pore sizes ranging from 2 nanometer to 20 nanometer which can be used as electrode materials for a...
6417069 Substrate processing method and manufacturing method, and anodizing apparatus  
A porous layer is formed on an Si substrate using an anodizing apparatus having a conductive partition inserted between a cathode and an anode. First, the cathode and Si substrate are brought into...
6368938 Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate  
A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from thermally oxidized silicon wafer so that processing temperatures are limited to 900°...
6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide  
Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle...
6352893 Low temperature self-aligned collar formation  
A method for fabricating a semiconductor device, in accordance with the present invention, includes the steps of providing a semiconductor wafer having exposed p-doped silicon regions and placing...
6274456 Monolithic device isolation by buried conducting walls  
Surface to surface electrical isolation of integrated circuits has been achieved by forming N type moats that penetrate the silicon as deeply as required, including across the full thickness of a...
6261892 Intra-chip AC isolation of RF passive components  
A method of fabricating an integrated circuit having active components, conductors and isolation regions on a substrate is disclosed, including forming a portion of at least one of the isolation...
6197654 Lightly positively doped silicon wafer anodization process  
A method of anodizing a lightly doped wafer wherein there is provided a lightly p-typed doped silicon wafer having a frontside and a backside. A p-type region is formed on the backside doped...
6140210 Method of fabricating an SOI wafer and SOI wafer fabricated thereby  
In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of...
6020250 Stacked devices  
Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar...
5994189 High withstand voltage semiconductor device and manufacturing method thereof  
An n - layer is formed on a main surface of a p-type semiconductor substrate. A p - diffusion region is formed at a surface of n - layer. A p diffusion region is formed contiguous to one end of...
5950094 Method for fabricating fully dielectric isolated silicon (FDIS)  
The present invention provides a method of fabricating fully dielectric isolated silicon (FDIS) by anodizing a buried doped silicon layer through trenches formed between active areas to form a...
5830532 Method to produce ultrathin porous silicon-oxide layer  
A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period...
4554059 Electrochemical dielectric isolation technique  
Plane indicating moats are formed extending through an epitaxial layer into a substrate simultaneous with the formation of the isolation moats which terminate within the epitaxial layer. The...
4292730 Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization  
A memory cell having two mesa bipolar transistors separated by a valley in which two doped polycrystalline load resistors are formed. Doped polycrystalline conductors connect the resistors to a...
4268348 Method for making semiconductor structure  
1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure,...
4193836 Method for making semiconductor structure  
Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body...
4056414 Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators  
Thermoprocessing of integrated-circuit devices and ionizing radiation environments create electronic charges in dielectric isolation materials and in dielectric-semiconductor interface regions....
3944447 Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation  
Structure: An integrated circuit structure with full dielectric isolation comprising a supporting substrate having a planar surface of dielectric material and a semiconductor layer on said...
3776788 METHOD OF PRODUCING INSULATED SEMICONDUCTOR REGIONS  
A process for producing insulated semiconductor regions. To produce an insulated region on a semiconductor wafer, a semiconductor substrate of one conductance type is etched to the region of...
3661741 FABRICATION OF INTEGRATED SEMICONDUCTOR DEVICES BY ELECTROCHEMICAL ETCHING  
Grid-like zones of P or N type high conductivity material are formed in the surface of an N type higher resistivity epitaxially deposited layer on a high conductivity substrate of a body of silicon...
3616345 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES IN WHICH A SELECTIVE ELECTROLYTIC ETCHING PROCESS IS USED  
A method of manufacturing semiconductor devices comprising a thin film of single crystal silicon. In this process, the surface of one side of a plate-shaped single crystal of silicon substrate of N...
3536600 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING AN ELECTROLYTIC ETCHING PROCESS AND SEMICONDUCTOR DEVICE MANUFACTURED BY THIS METHOD  
3471922 MONOLITHIC INTEGRATED CIRCUITRY WITH DIELECTRIC ISOLATED FUNCTIONAL REGIONS  
Matches 1 - 38 out of 38