Patents in Class 438/407

Matches 1 - 50 out of 181

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Match	Document	Document Title
1	7666721	SOI substrates and SOI devices, and methods for forming the same An improved semiconductor-on-insulator (SOI) substrate is provided, which contains a patterned buried insulator layer at varying depths. Specifically, the SOI substrate has a substantially planar...
2	7662696	Method for fabricating semiconductor devices According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on...
3	7659178	Semiconductor device structures with reduced junction capacitance and drain induced barrier lowering and methods for fabricating such device structures and for fabricating a semiconductor-on-insulator substrate Semiconductor device structures with reduced junction capacitance and drain induced barrier lowering, methods for fabricating such device structures, and methods for forming a...
4	7645676	Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The semiconductor structure comprises a shaped-modified isolation region that is formed in a trench generally...
5	7632735	Process for manufacturing silicon-on-insulator substrate A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon...
6	7615465	Creation of high mobility channels in thin-body SOI devices A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of...
7	7611975	Method of implanting a substrate and an ion implanter for performing the method An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround...
8	7601606	Method for reducing the trap density in a semiconductor wafer The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the...
9	7566601	Method of making a one transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a...
10	7566629	Patterned silicon-on-insulator layers and methods for forming the same In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon...
11	7560313	SOI wafer and method for producing the same The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI...
12	7541257	Semiconductor device having three-dimensional construction and method for manufacturing the same A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the...
13	7531430	Method for producing a semiconductor-on-insulator structure The invention relates to a process of treating a structure for electronics or optoelectronics, wherein the structure that has a substrate, a first oxide layer, an intermediate layer, a second oxide...
14	7504314	Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom The invention relates generally to a method for fabricating oxygen-implanted semiconductors, and more particularly to a method for fabricating oxygen-implanted silicon-on-insulation (“SOI”)...
15	7494901	Methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass....
16	7494902	Method of fabricating a strained multi-gate transistor A method is disclosed for relaxing strain in a multi-gate device, the method comprising providing a substrate with a strained material, patterning a plurality of fins in the strained material,...
17	7485541	Creation of high mobility channels in thin-body SOI devices A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of...
18	7482243	Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming...
19	7476594	Methods of fabricating silicon nitride regions in silicon carbide and resulting structures A method is disclosed for fabricating a silicon nitride regions in silicon carbide. The method includes the steps of implanting a sufficient dose and energy of nitrogen ions into a silicon carbide...
20	7473614	Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop...
21	7456080	Semiconductor on glass insulator made using improved ion implantation process Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to multiple ion implantation processes to...
22	7452785	Method of fabrication of highly heat dissipative substrates The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions. The...
23	7452758	Process for making FinFET device with body contact and buried oxide junction isolation There is a FinFET device. The device has a silicon substrate, an oxide layer, and a polysilicone gate. The silicon substrate defines a planar body, a medial body, and a fin. The planar body, the...
24	7425495	Method of manufacturing semiconductor substrate and semiconductor device A method of manufacturing a semiconductor substrate and semiconductor device is disclosed and comprises forming a first monocrystalline semiconductor layer on a semiconductor base material, forming...
25	7422956	Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers A semiconductor device comprising a substrate having a first crystal orientation is provided. A first insulating layer overlies the substrate and a plurality of silicon layers overlie the first...
26	7413959	Semiconductor device including a planarized surface and method thereof A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The...
27	7378330	Cleaving process to fabricate multilayered substrates using low implantation doses A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer...
28	7361570	Semiconductor device having an implanted precipitate region and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor and an integrated circuit including the same. The semiconductor device 100 , among other things, may include...
29	7348253	High-quality SGOI by annealing near the alloy melting point A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single...
30	7338857	Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
31	7323370	SOI device with reduced junction capacitance An SOI FET comprising a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region is disclosed. The doped region has a dielectric constant...
32	7320925	SOI substrate, semiconductor substrate, and method for production thereof A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI...
33	7312092	Methods for fabrication of localized membranes on single crystal substrate surfaces A method is provided for fabricating thin membrane structures in localized surface regions of a single crystal substrate. In the method, ion implantation masks are patterned on the surface of the...
34	7285473	Method for fabricating low-defect-density changed orientation Si The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first...
35	7217629	Epitaxial imprinting The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said...
36	7211497	Method for fabricating semiconductor devices According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on...
37	7205632	Anti-scattering attenuator structure for high energy particle radiation into integrated circuits A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor...
38	7183172	Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby A method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby, is provided. The method includes forming sequentially buried oxide, diffusion barrier and SOI...
39	7173260	Removing byproducts of physical and chemical reactions in an ion implanter An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter...
40	7141483	Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow...
41	7129138	Methods of implementing and enhanced silicon-on-insulator (SOI) box structures Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a...
42	7118978	Semiconductor device and method for producing the same A method for producing a semiconductor device with an SOI substrate having a support substrate 1 and a semiconductor layer 3 that interpose a first insulating film 2 between them includes the...
43	7115463	Patterning SOI with silicon mask to create box at different depths The present invention provides a method of fabricating a patterned silicon-on-insulator substrate which includes dual depth SOI regions or both SOI and non-SOI regions within the same substrate....
44	7112509	Method of producing a high resistivity SIMOX silicon substrate The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the...
45	7112850	Non-volatile memory device with a polarizable layer This invention concerns a non-volatile memory device with a polarizable layer. The apparatus concerns a substrate, a buried oxide layer within the substrate, and a polarizable layer within the...
46	7105426	Method of forming a semi-insulating region A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating...
47	7102141	Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed.
48	7094663	Semiconductor device and method of manufacturing the same The semiconductor device has a low-resistance layer provided under the interconnection extending from the signal input to a gate of MOSFET. The low-resistance layer decreases the substrate...
49	7060585	Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization A method utilizing in-place bonding and amorphization/templated recrystallization (ATR) is provided for making bulk and semiconductor-on-insulator substrates having coplanar semiconductor layers of...
50	7029986	Bonded products and methods of fabrication therefor This invention relates to a method of fabricating a bonded product comprising at least two components that are bonded together, the method comprising the steps of: a) bringing the components...

Matches 1 - 50 out of 181

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