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7615465 |
Creation of high mobility channels in thin-body SOI devices
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of...
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7611928 |
Method for producing a substrate
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer,...
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7598153 |
Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred...
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7592239 |
Flexible single-crystal film and method of manufacturing the same
The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a...
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7588994 |
Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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7585793 |
Method for applying a high temperature heat treatment to a semiconductor wafer
The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments,...
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7579268 |
Method of manufacturing an integrated circuit
A method of manufacturing an integrated circuit including a first isolated chip electrically and mechanically connected via wafer bonding to a second isolated chip, wherein the active faces of the...
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7547609 |
Method and structure for implanting bonded substrates for electrical conductivity
A process for forming multi-layered substrates, e.g., silicon on silicon. The process includes providing a first substrate, which has a thickness of material to be removed. The thickness of...
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7547579 |
Underfill process
A method and apparatus for underfilling a gap between a semiconductor die or device and a substrate, where the semiconductor die or device is electrically connected to the substrate so that an...
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7541629 |
Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process
A method and structure for reducing leakage currents in integrated circuits based on a direct silicon bonding (DSB) fabrication process. After recessing a top semiconductor layer and an underlying...
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7541263 |
Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including:
a) a step for forming a...
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7541261 |
Flexible electronics using ion implantation to adhere polymer substrate to single crystal silicon substrate
An electronic apparatus uses a single crystalline silicon substrate disposed adjacent to a flexible substrate. The electronic apparatus may be a flexible flat panel display, or a flexible printed...
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7536780 |
Method of manufacturing wiring substrate to which semiconductor chip is mounted
The present invention discloses a method of manufacturing a wiring substrate to which a semiconductor chip mounted. The method includes the steps of forming a base, forming a peeling layer on the...
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7531429 |
Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices
Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The...
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7531428 |
Recycling the reconditioned substrates for fabricating compound material wafers
Methods for fabricating compound material wafers are described. An embodiment of the method includes providing a donor substrate having a surface, forming a weakened zone in the donor substrate to...
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7528050 |
High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods
The present invention provides a semiconductor structure that includes a high performance field effect transistor (FET) on a semiconductor-on-insulator (SOI) in which the insulator thereof is a...
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7528049 |
Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby
A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating...
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7518236 |
Power circuit package and fabrication method
A power circuit package includes a base including a substrate, a plurality of interconnect circuit layers over the substrate with each including a substrate insulating layer patterned with...
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7510945 |
Element formation substrate, method of manufacturing the same, and semiconductor device
A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major...
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7498235 |
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate...
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7485571 |
Method of making an integrated circuit
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and...
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7485541 |
Creation of high mobility channels in thin-body SOI devices
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of...
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7452785 |
Method of fabrication of highly heat dissipative substrates
The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions. The...
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7442622 |
Silicon direct bonding method
A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming...
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7422958 |
Method of fabricating a mixed substrate
A method for fabricating a mixed substrate that include insulating material layer portions buried in a substrate of semiconductor material. The method includes providing a support substrate made of...
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7422956 |
Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers
A semiconductor device comprising a substrate having a first crystal orientation is provided. A first insulating layer overlies the substrate and a plurality of silicon layers overlie the first...
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7407863 |
Adhesive bonding with low temperature grown amorphous or polycrystalline compound semiconductors
Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth,...
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7405466 |
Method of fabricating microelectromechanical system structures
A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one...
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7396734 |
Substrate manufacturing method
In a method of manufacturing a bonded substrate stack by bonding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is...
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7396407 |
Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the...
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7381624 |
Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate
By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed,...
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7378330 |
Cleaving process to fabricate multilayered substrates using low implantation doses
A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer...
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7358586 |
Silicon-on-insulator wafer having reentrant shape dielectric trenches
A bonded SOI wafer and a method for forming a bonded SOI wafer are provided. According to the disclosed method, a first semiconductor wafer is provided, having a first dielectric layer disposed at...
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7358161 |
Methods of forming transistor devices associated with semiconductor-on-insulator constructions
The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass....
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7358147 |
Process for producing SOI wafer
There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer...
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7348252 |
Method of forming silicon-on-insulator wafer having reentrant shape dielectric trenches
A method for forming a bonded SOI wafer is provided in which a first wafer having a single-crystal semiconductor region has a first dielectric layer disposed at an outer surface of the first wafer...
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7344956 |
Method and device for wafer scale packaging of optical devices using a scribe and break process
A multilayered integrated optical and circuit device. The device has a first substrate comprising at least one integrated circuit chip thereon, which has a cell region and a peripheral region....
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7338884 |
Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device
An interconnecting substrate for carrying a semiconductor device, comprising: an insulating layer; an interconnection set on an obverse surface of the insulating layer; an electrode which is set on...
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7335996 |
Method of room temperature covalent bonding
A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by...
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7300853 |
Thin layer semi-conductor structure comprising a heat distribution layer
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer ( 2 ) separated from a support substrate ( 1 ) by an intermediate zone ( 3 ), the intermediate...
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7291539 |
Amorphization/templated recrystallization method for hybrid orientation substrates
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid...
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7285841 |
Method of manufacturing signal processing apparatus
In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate,...
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7285473 |
Method for fabricating low-defect-density changed orientation Si
The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first...
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7276428 |
Methods for forming a semiconductor structure
Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on...
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7276424 |
Fabrication of aligned nanowire lattices
Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and...
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7229892 |
Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first...
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7217631 |
Semiconductor device and method for fabricating the device
There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though...
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7214582 |
Semiconductor substrate and semiconductor circuit formed therein and fabrication methods
A semiconductor substrate and a semiconductor circuit formed therein and associated fabrication methods are provided. A multiplicity of depressions with a respective dielectric layer and a...
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7205625 |
Junction substrate and method of bonding substrates together
A junction substrate includes a first substrate, a buffer film formed on one surface of the first substrate, a metal containing film formed on the buffer film and having a lower resistance than the...
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7195987 |
Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein
CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on...
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