Matches 251 - 300 out of 345 < 1 2 3 4 5 6 7 >
Match Document Document Title
5484738 Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits  
A bonded, SOI wafer which has stepped isolation trenches and sublayer interconnections first formed in a bulk silicon wafer. After these process steps are complete, a thin polysilicon layer is...
5478758 Method of making a getterer for multi-layer wafers  
A method of making a gettering structure for dielectrically isolated wafer structures, such as bonded wafers. A getterer layer is deposited over the wafer having semiconductor regions isolated from...
5474952 Process for producing a semiconductor device  
A process for producing a semiconductor service of the type having a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate; a first element formed in a region of...
5468674 Method for forming low and high minority carrier lifetime layers in a single semiconductor structure  
A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer...
5466631 Method for producing semiconductor articles  
A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the...
5461001 Method for making semiconductor structures having environmentally isolated elements  
A first semiconductor wafer having a semiconductor element such as a piezoresistive element or any integrated circuit located on a top surface thereof is bonded to a second semiconductor wafer so...
5459104 Process for production of semiconductor substrate  
The invention relates to a process of production of a semiconductor substrate by binding etc. involving the direct polishing of an oxide film with step differences. A silicon oxide film (3) having...
5449638 Process on thickness control for silicon-on-insulator technology  
A method for forming a thin, uniform top silicon layer using bonded-wafer SOI technology is described. A dielectric layer is formed on a first surface of a first silicon substrate. A trench is...
5443661 SOI (silicon on insulator) substrate with enhanced gettering effects  
A silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon...
5444014 Method for fabricating semiconductor device  
Disclosed is a method of fabricating an SOI substrate, comprising the steps of forming a first insulating layer on a single crystal silicon substrate; patterning the first insulating layer to form...
5437762 Method and apparatus for semiconductor memory  
The invention concerns a method of forming various kinds of SOI structures and semiconductor memory devices using the forming technique. It is useful, for example, in SRAM or EEPROM devices. In...
5436173 Method for forming a semiconductor on insulator device  
A method for forming a semiconductor on insulator device is provided that begins with an outer semiconductor layer (16). Trenches (12) of a predetermined depth are formed in outer semiconductor...
5420064 Method of manufacturing a dielectric isolation substrate  
According to this invention, there is provided a method of manufacturing a semiconductor device, including the steps of anisotropically etching a surface of an n-type monocrystalline silicon...
5413952 Direct wafer bonded structure method of making  
A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature...
5401670 Technique to manufacture a SOI wafer and its applications in integrated circuits manufacturing  
A SOI wafer is produced by employing a bonding tool set which can be repeatedly used to reduce manufacturing cost. The use of a bonding tool set enables its application in the fabrication of IC...
5399231 Method of forming crystalline silicon devices on glass  
A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon...
5369050 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device includes the steps of forming a semiconductor layer having a convex device area and a convex alignment mark on an insulating layer. The insulating...
5366923 Bonded wafer structure having a buried insulation layer  
A wafer structure and a method of making the same, upon which semiconductor devices may be formed, comprises first and second wafers. The first wafer comprises a first substrate having a thin oxide...
5362659 Method for fabricating vertical bipolar junction transistors in silicon bonded to an insulator  
A method is provided for manufacturing a bipolar transistor, comprising the teps of: 1) abutting a polished surface of a substantially single crystal silicon wafer with a polished surface of an...
5352625 Method of manufacturing semiconductor substrate  
In manufacturing a semiconductor substrate having a dielectric isolation structure, a dielectric film is formed at a semiconductor layer formed by epitaxial growth. Grooves for carrying out...
5346848 Method of bonding silicon and III-V semiconductor materials  
A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V...
5336634 Dielectrically isolated substrate and a process for producing the same  
A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite...
5308776 Method of manufacturing SOI semiconductor device  
A method of manufacturing an SOI type substrate by forming a poly-Si layer on the surface of the one Si single crystal wafer (A), then forming a SiO 2 film on the surface of the other Si single...
5298449 Semiconductor substrate having a silicon-on-insulator structure and method of fabricating the same  
The invention provides a silicon-on-insulator semiconductor substrate structure and a method of fabricating the same. The structure includes a base silicon substrate, a mono-crystalline silicon...
5290715 Method of making dielectrically isolated metal base transistors and permeable base transistors  
The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon...
5286670 Method of manufacturing a semiconductor device having buried elements with electrical characteristic  
There are disclosed a semiconductor device having electrical elements buried a SOI substrate and a manufacturing method thereof, the manufacturing method of the invention comprising the steps of:...
5277748 Semiconductor device substrate and process for preparing the same  
A process for preparing a semiconductor device substrate comprises a step of making at least one surface of a first substrate composed of Si material porous, a step of oxidizing inside walls of...
5278102 SOI device and a fabrication process thereof  
A method for fabricating a semiconductor device comprises the steps of forming a depression on a substrate, bonding a plate of a single crystal semiconductor material on the substrate to establish...
5272104 Bonded wafer process incorporating diamond insulator  
A semiconductor-on-insulator structure incorporating a layer of diamond material and method for preparing such. The structure comprises a layer containing diamond material and having a first...
5268326 Method of making dielectric and conductive isolated island  
A dielectric and conductive isolated island is fabricated by providing an active wafer having a first and a second major surface, a doped region extending from the first surface, and a trench...
5266511 Process for manufacturing three dimensional IC's  
A first semiconductor substrate comprises an integrated circuit formed therein and an alignment mark formed thereon. The top surface of the first semiconductor substrate is covered with a first...
5262346 Nitride polish stop for forming SOI wafers  
A method of forming a SOI integrated circuit includes defining thin silicon mesas by wet etching a device layer having the <100> orientation down to the underlying insulator so that the (111)...
5258323 Single crystal silicon on quartz  
A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such...
5238865 Process for producing laminated semiconductor substrate  
A first semiconductor substrate provided with an oxide film having protruded portions on a principal surface thereof is laminated and thermally bonded to a second substrate having recessed portions...
5234535 Method of producing a thin silicon-on-insulator layer  
A method of forming a thin silicon SOI layer by wafer bonding, the thin silicon SOI layer being substantially free of defects upon which semiconductor structures can be subsequently formed, is...
5223450 Method of producing semiconductor substrate having dielectric separation region  
A dielectric buried layer is formed inside substrates which are directly bonded together. Firstly, a groove or a recess, or both are formed on the principal bonding plane of one of at least two...
5213993 Method of manufacturing semiconductor substrate dielectric isolating structure  
A manufacturing method of this invention improves nonuniformity in film thickness of a circuit element formation region produced due to a poor flatness of a semiconductor substrate in the...
5204282 Semiconductor circuit structure and method for making the same  
A semiconductor circuit structure including a semiconductor substrate portion and at least one region provided on one main surface thereof insulatedly isolated from other regions provided on the...
H001137 Wafer bonding technique for dielectric isolation processing  
A process for forming a dielectrically isolated wafer is disclosed. In particular, the conventional process is altered to replace the step of growing the thick polysilicon handle layer with the...
5164218 Semiconductor device and a method for producing the same  
A semiconductor device of vertical arrangement includes an anode region formed of a first semiconductor substrate and a second semiconductor substrate joined with the first semiconductor substrate....
5124274 Method for production of dielectric-separation substrate  
After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and...
5098861 Method of processing a semiconductor substrate including silicide bonding  
A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar...
5096854 Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns  
The present invention relates to a method for polishing a silicon wafer. The method comprises the steps of: (a) supplying a polishing fluid to a polishing surface, the polishing fluid including an...
5097314 Dielectrically isolated substrate with isolated high and low breakdown voltage elements  
A dielectrically isolated substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semicondcutor wafer with a first insulating layer interposed...
5091330 Method of fabricating a dielectric isolated area  
A dielectric isolated area is formed by bonding a first and a second wafer. A first wafer having a first and a second major surface is provided. A second wafer having a first and a second major...
5086011 Process for producing thin single crystal silicon islands on insulator  
A semiconductor fabrication process uses an epitaxial layer as an etch stop in a plasma etch process. In one embodiment, mechanical stops and an epitaxial layer are used in combination for stopping...
5084408 Method of making complete dielectric isolation structure in semiconductor integrated circuit  
For controlling unwanted production of crystal defects from corners of isolated regions in a complete dielectric isolation structure, after at least one trench or groove is provided through a mask...
5064771 Method of forming crystal array  
A method for forming an array of single crystalline seed crystals separated by an insulator and suitable for use in the formation of infrared detector elements is disclosed. The seed crystals are...
5051378 Method of thinning a semiconductor wafer  
A method for manufacture of a semiconductor wafer in a manner to attain a high uniformity in the thickness of a semiconductor layer, by first forming hardly polishable stoppers of mutually...
5036021 Method of producing a semiconductor device with total dielectric isolation  
A method of producing a semiconductor device comprises the steps of preparing a stacked structure having an n - -type semiconductor substrate, an n + -type diffusion layer formed on the n - ...
Matches 251 - 300 out of 345 < 1 2 3 4 5 6 7 >