Matches 101 - 150 out of 347 < 1 2 3 4 5 6 7 >
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6709948 Process for manufacturing a two-axis mirror  
A process for manufacturing a wafer from a layer of material such as silicon and having a multiplicity of MEMS devices such as mirrors with gimbals formed thereon is disclosed. The features of the...
6699770 Method of making a hybride substrate having a thin silicon carbide membrane layer  
A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiO x ) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide...
6664169 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus  
In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first...
6660606 Semiconductor-on-insulator annealing method  
The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less...
6656806 SOI structure and method of producing same  
A Silicon On Insulator (SOI) structure and method of producing an SOI structure that can prevent a short circuit between a Local Inter-Connect (LIC) and a well in the SOI structure is disclosed....
6645833 Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method  
The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate...
6641662 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same  
A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO 3 half-wave plate, comprises ion implanting a bulk...
6635550 Semiconductor on insulator device architecture and method of construction  
An SOI architecture is provided that comprises an inner substrate 10 which has a buried conductor layer 12 formed on an outer surface thereof. A bonding layer 14 is used to provide a cohesive...
6624047 Substrate and method of manufacturing the same  
In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded...
6613652 Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance  
A method to form SOI devices using wafer bonding. A first substrate is provided having trenches in a first side. A first insulating layer is formed over the first side of the first substrate and...
6613643 Structure, and a method of realizing, for efficient heat removal on SOI  
In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate, involving the steps of providing a first silicon substrate and a second silicon substrate;...
6611024 Method of forming PID protection diode for SOI wafer  
An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during...
6605518 Method of separating composite member and process for producing thin film  
To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the...
6593204 Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material  
A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and...
6589811 Method for transferring semiconductor device layers to different substrates  
A method for transferring layers containing semiconductor devices and/or circuits to substrates other than those on which these semiconductor devices and/or circuits have been originally...
6586338 Methods for creating elements of predetermined shape and apparatus using these elements  
Methods for forming elements having a predetermined shape and for assembling the elements. In one example of a method, each of the elements includes a functional component which is disposed on a...
6583024 High resistivity silicon wafer with thick epitaxial layer and method of producing same  
A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by:...
6566255 SOI annealing method and SOI manufacturing method  
The HF defect density in an SOI is reduced. An SOI having a thickness of 200 nm or less is annealed in an inert atmosphere at a temperature between the eutectic temperature (e.g., 966° C.) of a...
6562692 Dielectric isolated wafer and its production method  
In a photolithography process in which a resist film having window is provided on the surface of silicon wafer during the production of a dielectric isolated wafer, after coating back surface...
6558990 SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrate  
A manufacturing method of a SOI substrate ( 10 ) comprises the steps of: forming an oxide film ( 12 ) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon...
6555914 Integrated circuit package via  
A method of forming a via in a circuit, such that parasitic capacitance is reduced. The surface layers of the circuit are identified, to which continuity with the via is desired, and secondary...
6551897 Wafer trench article and process  
A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30 . Voids 36 in the...
6548375 Method of preparing silicon-on-insulator substrates particularly suited for microwave applications  
A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning...
6544431 Thin film lithium niobate structure and method of making the same  
A method of forming thin film waveguide regions in lithium niobate uses an ion implant process to create an etch stop at a predetermined distance below the lithium niobate surface. Subsequent to...
6524890 Method for manufacturing semiconductor device having element isolation structure  
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating...
6506665 Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same  
An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and...
6503778 Thin film device and method of manufacturing the same  
A first device unit is formed by adhering a backside support substrate to a backside of a first device layer. A second device unit is formed by adhering a surface support substrate to a surface of...
6503811 Substrate having a semiconductor layer, and method for fabricating the same  
A method for fabricating a substrate having a semiconductor layer lowing thinning of the semiconductor layer while ensuring accuracy its thickness and a small surface roughness is provided. First,...
6492195 Method of thinning a semiconductor substrate using a perforated support substrate  
Disclosed herein is a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time. Described specifically, a hole-free...
6479366 Method of manufacturing a semiconductor device with air gaps formed between metal leads  
A semiconductor device is fabricated first by thermocompression-bonding a silicon oxide film onto a plurality of conductive films under vacuum using a film having the silicon oxide film formed...
6468880 Method for fabricating complementary silicon on insulator devices using wafer bonding  
A method to form a silicon on insulator (SOI) device using wafer bonding. A first substrate is provided having an insulating layer over a first side. A second substrate is provided having first...
6459107 Photodetector having a mixed crystal layer of SiGeC  
A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C.
6455396 SOI semiconductor device capable of preventing floating body effect  
The present invention provides an SOI device preventing the floating body effect, and a method for manufacturing the same. Disclosed is a method comprising the steps of: forming an isolation layer...
6451668 Method of producing calibration structures in semiconductor substrates  
The invention relates to a method of producing calibration structures in semiconductor substrates in the manufacture of components, specifically micro-mechanical systems with integrated...
6451634 Method of fabricating a multistack 3-dimensional high density semiconductor device  
A multistack 3-D semiconductor structure comprising a first level structure comprising a first semiconductor substrate and first active devices; and a second level structure comprising a SOI...
6448155 Production method of semiconductor base material and production method of solar cell  
When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the...
6429095 Semiconductor article and method of manufacturing the same  
A method of manufacturing a semiconductor article comprises forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a...
6429096 Method of making thinned, stackable semiconductor device  
A method of manufacturing a semiconductor device, comprising preparing a semiconductor device wafer which is formed with an LSI; working the semiconductor device wafer from the back surface...
6428620 Substrate processing method and apparatus and SOI substrate  
An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to...
6426270 Substrate processing method and method of manufacturing semiconductor substrate  
In a method of bonding first and second substrates to prepare a bonded substrate stack and then separating the bonded substrate stack at a porous layer to manufacture an SOI substrate,...
6417069 Substrate processing method and manufacturing method, and anodizing apparatus  
A porous layer is formed on an Si substrate using an anodizing apparatus having a conductive partition inserted between a cathode and an anode. First, the cathode and Si substrate are brought into...
6417075 Method for producing thin substrate layers  
The present invention relates to a method of producing very thin substrate layers, particularly thin semiconductor areas, which may comprise integrated circuits. In the method two substrates ( 1, 2...
6403450 Heat treatment method for semiconductor substrates  
The invention concerns a method for treating, a substrate comprising a semi-conducting layer ( 4 ) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a...
6372600 Etch stops and alignment marks for bonded wafers  
There is described a method of making a bonded wafer by diffusing regions of a first wafer proximate a first major surface. Trenches are etched a predetermined distance into the first wafer from...
6368938 Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate  
A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from thermally oxidized silicon wafer so that processing temperatures are limited to 900°...
6365488 Method of manufacturing SOI wafer with buried layer  
A method of forming a silicon-on-insulator device having a buried layer is described. Ions are implanted into a first semiconductor substrate where it is not covered by a photoresist mask to form...
6352905 Method and structure of high and low K buried oxide for SOI technology  
A method and structure for forming an integrated circuit wafer comprises forming a substrate having first and second portions, depositing a first insulator over the substrate, patterning the first...
6350702 Fabrication process of semiconductor substrate  
SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, conservation of resources and reduction of cost are realized by reuse of the wafer and the...
6335258 Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element  
The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic...
6331208 Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor  
A crystal silicon substrate is anodized to form a porous layer thereon, and a thin-film crystal is grown by epitaxial growth on the porous layer. Openings extending from the surface of the grown...
Matches 101 - 150 out of 347 < 1 2 3 4 5 6 7 >