Matches 51 - 100 out of 345 < 1 2 3 4 5 6 7 >
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7214582 Semiconductor substrate and semiconductor circuit formed therein and fabrication methods  
A semiconductor substrate and a semiconductor circuit formed therein and associated fabrication methods are provided. A multiplicity of depressions with a respective dielectric layer and a...
7205625 Junction substrate and method of bonding substrates together  
A junction substrate includes a first substrate, a buffer film formed on one surface of the first substrate, a metal containing film formed on the buffer film and having a lower resistance than the...
7195987 Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein  
CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on...
7192841 Method of wafer/substrate bonding  
A method of bonding two components by depositing an amorphous and non-hydrogenated intermediate layer ( 2 ) on one of the components ( 1,4 ) and arranging the components ( 1,4 ) in spaced...
7186576 Stacked die module and techniques for forming a stacked die module  
Embodiments of the present technique relate to forming die stacks. Specifically, embodiments of the present technique include a method of forming and testing semiconductor die comprising forming a...
7176102 Method for producing SOI wafer and SOI wafer  
A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion...
7169683 Preventive treatment method for a multilayer semiconductor structure  
A preventive treatment method for a multilayer semiconductor structure having a support substrate, at least one intermediate layer and a surface layer in which the surface layer is to be subjected...
7151041 Methods of forming semiconductor circuitry  
The invention includes a method of forming semiconductor circuitry wherein a first semiconductor structure comprising a first monocrystalline semiconductor substrate is bonded to a second...
7148119 Process for production of semiconductor substrate  
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the...
7135383 Composite structure with high heat dissipation  
A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at...
7122442 Method and system for dopant containment  
According to one embodiment, a semiconductor device is provided. The semiconductor device includes an oxide layer. The semiconductor device also includes a silicon layer disposed outwardly from the...
7118978 Semiconductor device and method for producing the same  
A method for producing a semiconductor device with an SOI substrate having a support substrate 1 and a semiconductor layer 3 that interpose a first insulating film 2 between them includes the...
7109092 Method of room temperature covalent bonding  
A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by...
7091108 Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices  
Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The...
7074693 Plasma spraying for joining silicon parts  
A method of joining two silicon members and the bonded assembly in which the members are assembled to place them into alignment across a seam. Silicon derived from silicon powder is plasma sprayed...
7071530 Multiple layer structure for substrate noise isolation  
A method of forming a semiconductor structure, comprising: providing a substrate having a buried insulative layer and a heavily doped layer; forming a first trench within the substrate around a...
7064391 Bond and back side etchback transistor fabrication process  
A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the...
7029986 Bonded products and methods of fabrication therefor  
This invention relates to a method of fabricating a bonded product comprising at least two components that are bonded together, the method comprising the steps of: a) bringing the components...
7008855 Glass frit bond and process therefor  
A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate...
7008854 Silicon oxycarbide substrates for bonded silicon on insulator  
A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor...
6995455 Semiconductor device  
Semiconductor device includes a pair of substrates ( 1, 2 ) disposed oppositely, semiconductor elements ( 5, 6 ) formed in the substrates ( 1, 2 ), respectively, and having semiconductor circuits (...
6982208 Method for producing high throughput strained-Si channel MOSFETS  
A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using...
6979629 Method and apparatus for processing composite member  
A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second...
6955971 Semiconductor structure and methods for fabricating same  
A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material...
6939778 Method of joining an insulator element to a substrate  
Bonding methods and articles produced thereby are provided wherein an insulator, such as glass, is bonded to a solder with the assistance of an electric field.
6939777 Method for manufacturing semiconductor device  
An alignment mark section on a semiconductor substrate has two grooves which are filled with silicon oxide. The surface of the portion of the semiconductor substrate sandwiched by these grooves is...
6933205 Integrated circuit device and method of manufacturing the same  
The present invention provides an integrated circuit, comprising a semiconductor substrate, an active element formed on the side of one main surface of the semiconductor substrate, an insulating...
6908828 Support-integrated donor wafers for repeated thin donor layer separation  
Processes that may be used in producing electronic, optoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of...
6900108 High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane  
Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The...
6887342 Field-assisted fusion bonding  
A method of field-assisted fusion bonding produces multiple-layer devices. Contacts ( 301, 303, 305, 307, 309 ) are placed at various points along different surfaces of a combination of two or more...
6884693 Silicon-on-insulator wafer and method of manufacturing the same  
In a silicon-on-insulator (SOI) wafer and a method of manufacturing the same, the SOI wafer includes a first semiconductor wafer including an isolation insulating film formed to define an active...
6878605 Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate  
A method of manufacturing an SOI substrate for semiconductor devices is described. The method includes forming a low density impurity region in a first semiconductor substrate and a high density...
6867508 Method and apparatus for fabricating semiconductor laser device  
After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which...
6864176 Fabrication process for bonded wafer precision layer thickness control and its non-destructive measurement method  
A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer...
6844236 Method and structure for DC and RF shielding of integrated circuits  
A method for electromagnetically shielding circuits which combine to form an integrated circuit device provides isolated silicon islands surrounded laterally and subjacently by conductive material....
6835633 SOI wafers with 30-100 &angst buried oxide (BOX) created by wafer bonding using 30-100 &angst thin oxide as bonding layer  
A method of fabricating a SOI wafer having a gate-quality, thin buried oxide region is provided. The wafer is fabricating by forming a substantially uniform thermal oxide on a surface of a...
6815312 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof  
The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In x (Ga 1−y Al y ) 1−x P on a GaAs substrate 12 to form...
6801679 Multifunctional intelligent optical modules based on planar lightwave circuits  
Since the bandwidth-intensive applications such as Internet access, electronic commerce, multimedia applications, and distributed computing are rapidly increasing the volume of telecommunication...
6790748 Thinning techniques for wafer-to-wafer vertical stacks  
Methods for thinning wafer-to-wafer vertical stacks in the fabrication of stacked microelectronic devices. The methods include physically removing unsupported portions of a wafer to be thinned in...
6784071 Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement  
A new silicon structure is provided. Under a first embodiment of the invention, a first silicon substrate having a < 100 > crystallographic orientation is bonded to the surface of a second...
6770542 Method for fabricating semiconductor layers  
A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to...
6770507 Semiconductor wafer and method for producing the same  
There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of...
6767802 Methods of making relaxed silicon-germanium on insulator via layer transfer  
Methods of forming a SiGe layer overlying an insulator are provided. A layer of SiGe is deposited on a substrate and implanted with ion to form a defect region within the SiGe material below its...
6764917 SOI device with different silicon thicknesses  
A method of manufacturing a semiconductor device includes providing a silicon semiconductor layer over an insulating layer, and partially removing a first portion of the silicon layer. The silicon...
6759308 Silicon on insulator field effect transistor with heterojunction gate  
A field effect transistor (FET) is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The channel region is lightly doped with a...
6759310 Method for making a semiconductor substrate comprising a variant porous layer  
A semiconductor substrate includes a porous semiconductor having: a porous layer, with an impurity concentration on varying in the depth direction, or having a porous semiconductor containing an...
6753239 Bond and back side etchback transistor fabrication process  
A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the...
6743662 Silicon-on-insulator wafer for RF integrated circuit  
An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide...
6709948 Process for manufacturing a two-axis mirror  
A process for manufacturing a wafer from a layer of material such as silicon and having a multiplicity of MEMS devices such as mirrors with gimbals formed thereon is disclosed. The features of the...
6699770 Method of making a hybride substrate having a thin silicon carbide membrane layer  
A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiO x ) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide...
Matches 51 - 100 out of 345 < 1 2 3 4 5 6 7 >