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7625809 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an...
7611937 High performance transistors with hybrid crystal orientations  
A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes...
7579256 Method for forming shallow trench isolation in semiconductor device using a pore-generating layer  
A method for forming shallow trench isolation in a semiconductor device including forming a pad oxide, a pad nitride, and a pore-generating layer on an entire surface of a semiconductor substrate...
7563706 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device  
A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having...
7560313 SOI wafer and method for producing the same  
The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI...
7560389 Method for fabricating semiconductor element  
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
7528056 Low-cost strained SOI substrate for high-performance CMOS technology  
A cost-effective and simple method of fabricating strained semiconductor-on-insulator (SSOI) structures which avoids epitaxial growth and subsequent wafer bonding processing steps is provided. In...
7528078 Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer  
A process of forming an electronic device can include patterning a semiconductor layer to define an opening extending to an insulating layer, wherein the insulating layer lies between a substrate...
7507647 Method of manufacturing a high voltage semiconductor device including a deep well and a gate oxide layer simultaneously  
A method of manufacturing a high voltage semiconductor device including forming a P-type region implanted with P-type impurities and an N-type region implanted with N-type impurities in a silicon...
7498233 Method of forming an insulation layer structure having a concave surface and method of manufacturing a memory device using the same  
A method of forming an isolation layer structure for a semiconductor device includes forming a first structure on a substrate, the first structure including an insulation layer pattern having a...
7439153 Semiconductor device and manufacturing method thereof for reducing the area of the memory cell region  
A structure is adopted for a layout of an SRAM cell which provides a local wiring 3 a between a gate 2 a and gate 2 b and connects an active region 1 a and an active region 1 b . This...
7432149 CMOS on SOI substrates with hybrid crystal orientations  
Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the...
7425495 Method of manufacturing semiconductor substrate and semiconductor device  
A method of manufacturing a semiconductor substrate and semiconductor device is disclosed and comprises forming a first monocrystalline semiconductor layer on a semiconductor base material, forming...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7390696 Wafer, semiconductor device, and fabrication methods therefor  
In order to fabricate a semiconductor device that can perform at its full capacity, in which (i) a single-crystal silicon integrated circuit is formed on an insulating substrate without an adhesive...
7384857 Method to fabricate completely isolated silicon regions  
The construction of Shallow Trench Isolation, STI, regions is integrated in to a SIMOX fabrication process for a Silicon On Insulator, SOI, wafer. Prior to the beginning of the SOI process, a...
7382031 Component including a fixed element that is in a silicon layer and is mechanically connected to a substrate via an anchoring element and method for its manufacture  
A method and device are for anchoring fixed structural elements and, e.g., for anchoring electrodes for components, e.g., SOI wafer components, whose component structure is formed in a silicon...
7358586 Silicon-on-insulator wafer having reentrant shape dielectric trenches  
A bonded SOI wafer and a method for forming a bonded SOI wafer are provided. According to the disclosed method, a first semiconductor wafer is provided, having a first dielectric layer disposed at...
7354812 Multiple-depth STI trenches in integrated circuit fabrication  
Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause...
7351616 Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device  
A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different...
7348254 Method of fabricating fin field-effect transistors  
A method of fabricating a fin field-effect transistor that may enable a reduction in the number of process steps, by forming the fin structure by etching away a predetermined thickness of an...
7348255 Semiconductor device and method for fabricating a semiconductor device  
A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers...
7323394 Method of producing element separation structure  
A method of producing an element separation structure includes the steps of: forming a first thermal oxide film on the substrate; forming a silicon nitride film on the first thermal oxide film;...
7316979 Method and apparatus for providing an integrated active region on silicon-on-insulator devices  
A method and apparatus for providing integrated active regions on silicon-on-insulator (SOI) devices by oxidizing a portion of the active layer. When the active layer of the SOI wafer is relatively...
7297608 Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition  
A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then...
7294573 Method for controlling poly 1 thickness and uniformity in a memory array fabrication process  
According to one exemplary embodiment, a method includes planarizing a layer of polysilicon situated over field oxide regions on a substrate to form polysilicon segments, where the polysilicon...
7288462 Buffer zone for the prevention of metal migration  
Particle migration, such as silver electro-migration, on a flat ceramic surface is effectively eliminated by an upward vertical barrier formed on the surface or a groove formed in the surface...
7279769 Semiconductor device and manufacturing method thereof  
To suppress occurrence of dislocation in a substrate of a semiconductor device at an end portion of a gate electrode. Provided is a semiconductor device having a plurality of element formation...
7273904 Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same  
Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through...
7220654 Method for manufacturing semiconductor substrate  
An epitaxial layer is formed on a high-resistance semiconductor substrate containing interstitial oxygen at a high concentration, and then a heat treatment is performed to the semiconductor...
7217634 Methods of forming integrated circuitry  
The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within...
7208354 Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates  
Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from...
7205205 Ramp temperature techniques for improved mean wafer before clean  
A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least...
7205248 Method of eliminating residual carbon from flowable oxide fill  
Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems...
7199017 Methods of forming semiconductor circuitry  
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a...
7176101 Method of forming isolation oxide layer in semiconductor integrated circuit device  
A method is provided in which a first oxide layer is deposited on a silicon substrate and etched to form openings. A first silicon epitaxial layer is grown on the substrate in the openings, forming...
7153753 Strained Si/SiGe/SOI islands and processes of making same  
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
7112850 Non-volatile memory device with a polarizable layer  
This invention concerns a non-volatile memory device with a polarizable layer. The apparatus concerns a substrate, a buried oxide layer within the substrate, and a polarizable layer within the...
7109091 Method for processing a substrate to form a structure  
A method for processing a substrate to produce a structure, for example an insulating trench, uses a lithographic mask exposure process. Conventionally, the optical resolution limit prescribes the...
7091107 Method for producing SOI wafer and SOI wafer  
There is disclosed a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by, at least implanting at least one kind of ion of hydrogen ion and a rare gas ion into...
7071530 Multiple layer structure for substrate noise isolation  
A method of forming a semiconductor structure, comprising: providing a substrate having a buried insulative layer and a heavily doped layer; forming a first trench within the substrate around a...
7053451 Semiconductor device having impurity region under isolation region  
In formation of a source/drain region of an NMOS transistor, a gate-directional extension region < 41 a > of an N + block region < 41 > in an N + block resist film < 51 >...
7029980 Method of manufacturing SOI template layer  
A vacancy injecting process for injecting vacancies in template layer material of an SOI substrate. The template layer material has a crystalline structure that includes, in some embodiments, both...
7029995 Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy  
Methods for forming epitaxial films involve forming a buffer layer on a single crystal substrate, depositing an amorphous layer on the buffer layer, then forming an epitaxial film from the...
7018904 Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same  
A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base...
6998324 Methods of fabricating silicon on insulator substrates for use in semiconductor devices  
Example methods of fabricating a silicon on insulator substrate are disclosed. One example method may include forming a plurality of trenches on a substrate, forming an insulation layer on the...
6989315 SIMOX using controlled water vapor for oxygen implants  
An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×10 6 /cm 2 , includes a fluid port in the ion implantation chamber for...
6984570 Wafer bonding method of forming silicon-on-insulator comprising integrated circuitry  
A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the...
6982460 Self-aligned gate MOSFET with separate gates  
A structure and method of manufacturing a double-gate integrated circuit which includes forming a laminated structure having a channel layer and first insulating layers on each side of the channel...
6977204 Method for forming contact plug having double doping distribution in semiconductor device  
The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing an increase of contact resistance caused by a decrease in dopant concentration and...
Matches 1 - 50 out of 310 1 2 3 4 5 6 7 >