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8183567 |
Array substrate for liquid crystal display device and method of fabricating the same
An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor...
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8173991 |
Optoelectronic semiconductor chip having a multiple quantum well structure
An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a...
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8138002 |
Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
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8137995 |
Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive...
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8090229 |
Method and device for providing electronic circuitry on a backplate
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
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8058155 |
Integrated nanowires/microelectrode array for biosensing
The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with...
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8053262 |
Method for manufacturing nitride semiconductor laser element
A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on...
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8017931 |
LED and fabrication method thereof
Disclosed is a quantum-dot LED and fabrication method thereof. The quantum-dot LED includes: a substrate; a n-type semiconductor layer formed on the substrate; an insulator layer formed on the...
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7998770 |
Method for forming a semiconductor light-emitting device
A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The...
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7977134 |
Nitride-based semiconductor light emitting diode and method of manufacturing the same
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially...
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7964872 |
Organic light emitting device
An organic light emitting device includes a transistor having gate, source, and drain electrodes, and first electrode connected to one of the source or drain electrodes. The device also includes an...
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7951630 |
Method of fabricating light emitting diode chip
The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method...
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7947520 |
Semiconductor laser and method of making the same
In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is...
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7943406 |
LED fabrication via ion implant isolation
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type...
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7943407 |
Method for manufacturing semiconductor laser
A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group...
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7943408 |
Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package
The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green...
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7923277 |
Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package
The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green...
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7897422 |
Semiconductor light-emitting device and a method to produce the same
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from...
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7884466 |
Semiconductor device with double-sided electrode structure and its manufacturing method
According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated...
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7871842 |
Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package
The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green...
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7867798 |
Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the...
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7863197 |
Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
A method for fabricating the semiconductor structure include a semiconductor substrate having a cross-section hourglass shaped channel region. A stress imparting layer is located adjacent the...
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7816155 |
Mounted semiconductor device and a method for making the same
A method for mounting a semiconductor device onto a composite substrate, including a submount and a heat sink, is described. According to one aspect of the invention, the materials for the submount...
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7807489 |
Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms
A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al)...
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7799590 |
Semiconductor device and manufacturing method thereof
The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are...
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7799591 |
Semiconductor device and method for manufacturing the same
A semiconductor device comprises a first contact plug, a first structure and a second insulating layer, or comprises a first contact plug, a first structure, a protruding region and a second...
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7781796 |
Nitride semiconductor laser element
A nitride semiconductor laser element includes a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in...
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7781240 |
Integrated circuit device
An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and...
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7745245 |
Semiconductor light emitting device
At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding...
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7736923 |
Optical semiconductor device and method for fabricating the same
An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a...
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7718456 |
Package for housing light-emitting element and method for manufacturing package for housing light-emitting element
A package for housing a light-emitting element wherein a via hole for wiring provided so as to pass through an insulating substrate is arranged in such a manner that it is positioned under a...
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7713769 |
Method for fabricating light emitting diode structure having irregular serrations
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction...
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7704763 |
Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more...
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7691655 |
Method of manufacturing semiconductor optical device
Method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material;...
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7687376 |
Method of manufacturing vertical gallium nitride-based light emitting diode
A method of manufacturing a vertical GaN-based LED comprises preparing an n-type GaN substrate; sequentially forming an active layer and a p-type nitride semiconductor layer on the n-type GaN...
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7678648 |
Subresolution silicon features and methods for forming the same
Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an...
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7662650 |
Providing photonic control over wafer borne semiconductor devices
Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710)....
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7662672 |
Manufacturing process of leadframe-based BGA packages
A manufacturing process of a leadframe-based BGA package is disclosed. A leadless leadframe with an upper layer and a lower layer is provided for the package. The upper layer includes a plurality...
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7651946 |
Wet etch processing
A method of wet etching produces high-precision microneedle arrays for use in medical applications. The method achieves precise process control over microneedle fabrication, at single wafer or...
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7612498 |
Display element, optical device, and optical device manufacturing method
An array substrate includes an almost rectangular effective portion which is formed on the major surface of the substrate and includes a plurality of pixels for displaying images. An organic EL...
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7598104 |
Method of forming a metal contact and passivation of a semiconductor feature
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor...
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7595206 |
Manufacturing method for semiconductor light emitting device
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a...
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7541204 |
Method of manufacturing an optical semiconductor element
A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being...
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7527704 |
Method for preparing film structure comprising ferroelectric single crystal layer
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a...
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7521721 |
Surface-emitting type device and its manufacturing method
A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the...
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7517710 |
Method of manufacturing field emission device
A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes...
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7511311 |
Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type...
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7510891 |
Organic light emitting display device and method of manufacturing the same
A method of manufacturing an organic light emitting display device and the organic light emitting display device which reduces generation of dark spots by particles are disclosed. The method of...
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7492417 |
Method of manufacturing liquid crystal display device
Disclosed is an active matrix liquid crystal display device designed mainly for alternating electric current drive, in which orientation processing (monostabilization) is performed by a direct...
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7482189 |
Light emitting diode and method of fabricating the same
A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED...
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