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8182710 |
Structuring method
A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be...
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8178405 |
Resistor random access memory cell device
A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the...
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8178404 |
Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer...
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8168448 |
Ferroelectric register, and method for manufacturing capacitor of the same
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage...
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8169015 |
Semiconductor device and manufacturing method therefor
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted...
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8164131 |
Nonvolatile semiconductor memory device and method of manufacturing the same
A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity...
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8129251 |
Metal-insulator-metal-structured capacitor formed with polysilicon
A METAL-INSULATOR-METAL structured capacitor is formed with polysilicon instead of an oxide film as a sacrificial layer material that defines a storage electrode region. A MPS (Meta-stable Poly...
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8080474 |
Method for making electrode
The present invention provides a method for making an electrode. Firstly, a conducting substrate is provided. Secondly, a plurality of nano-sized structures is formed on the conducting substrate by...
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8062950 |
Method of manufacturing semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film
A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a...
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8039344 |
Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same
In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and...
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8003481 |
Method for fabricating a capacitor
A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a...
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7951682 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device includes forming an insulation layer over a substrate, forming a storage node contact plug passing through the insulation layer and...
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7897475 |
Semiconductor device having projection on lower electrode and method for forming the same
A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower...
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7871886 |
Nanocrystal memory with differential energy bands and method of formation
A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first...
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7868338 |
Liquid crystal display array board and method of fabricating the same
A liquid crystal display array board includes a plurality of gate wiring lines formed on a substrate and a plurality of data wiring lines crossing the plurality of gate wiring lines, a plurality of...
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7858465 |
Semiconductor device comprising transistor and capacitor and method of manufacturing the same
A semiconductor device according to an embodiment of the present invention includes: a transistor including, a gate insulator formed of an insulating layer deposited on a substrate, and a gate...
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7855113 |
Method for fabricating semiconductor memory device
A method for fabricating a semiconductor memory device includes: forming a lower conductive layer over a semiconductor substrate; forming an insulation layer over the lower conductive layer;...
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7846809 |
Method for forming capacitor of semiconductor device
A method for forming a capacitor of a semiconductor device includes the steps of forming first and second sacrificial insulation layers over a semiconductor substrate divided into first and second...
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7825043 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device includes: forming a bottom electrode; forming a ZrxAlyOz dielectric layer on the bottom electrode using an atomic layer deposition...
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7824998 |
Method of forming a semiconductor capacitor using amorphous carbon
A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening...
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7812450 |
Electrode with nano-sized structures
The present invention relates to an electrode 100 with high capacitance. The electrode includes a conducting substrate 10 with a number of nano-sized structures 13 thereon and a coating 15. The...
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7781298 |
Methods for fabricating a capacitor
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer....
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7754576 |
Method of forming inside rough and outside smooth HSG electrodes and capacitor structure
A container capacitor and method of forming the container capacitor are provided. The container capacitor comprises a lower electrode fabricated by forming a layer of doped polysilicon within a...
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7749854 |
Method for making a self-converged memory material element for memory cell
A self-converged memory material element is created during the manufacture of a memory cell comprising a base layer, with a bottom electrode, and an upper layer having a third, planarization stop...
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7745827 |
Memory device
Conventionally, the layer of the insulator between a cathode and an anode is formed by a droplet discharge method, vapor deposition, or the like separately from an interlayer insulating film formed...
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7741176 |
Method for fabricating a cylindrical capacitor including implanting impurities into the upper sections of the lower electrode to prevent the formation of hemispherical grain silicon on the upper sections
A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical...
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7736972 |
Method for forming storage electrode of semiconductor memory device
In order to form a storage electrode of a semiconductor memory device, an interlayer dielectric layer is formed on a semiconductor substrate having a bit line thereon. A contact hole exposing the...
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7727850 |
Method for forming capacitor of semiconductor device
A method for forming a capacitor of a semiconductor device includes forming a first capacitor in a storage node contact region to form a two-stage structured capacitor, thereby increasing the...
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7709367 |
Method for fabricating storage node contact in semiconductor device
A method for fabricating a storage node contact in a semiconductor device includes forming a landing plug over a substrate, forming a first insulation layer over the landing plug, forming a bit...
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7700454 |
Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
A method of fabricating a uniformly wrinkled capacitor lower electrode without the need to perform a high-temperature heat treatment and a method of fabricating a capacitor including the uniformly...
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7700433 |
MIM type capacitor
A method of fabricating an MIM type capacitor includes at least one of: Forming a first trench within an insulating interlayer formed on a semiconductor substrate. Forming a lower electrode layer...
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7670921 |
Structure and method for self aligned vertical plate capacitor
A method of forming a metal-insulator-metal (MIM) capacitor includes forming a first planar dielectric layer with a first metallization layer therein; forming a first passivation layer on top...
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7667257 |
Capacitor and process for manufacturing the same
Method for solving the problem caused when forming a crown-structure capacitor in a trench which is formed in an insulating film, and having difficulty in electrical by connecting a first upper...
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7666738 |
Method for fabricating capacitor of semiconductor device
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in...
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7662694 |
Capacitor having adjustable capacitance, and printed wiring board having the same
The capacitance of a capacitor is adjusted by forming openings in one of a pair of electrodes of the capacitor, the openings having different sizes d1, d2, d3, . . . , wherein d1>d2>d3> . . . and...
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7560036 |
System and method for drug delivery and microfluidic applications using microneedles
The invention relates to a method of fabricating a microneedle array in a substrate, a drug delivery device comprising one or more microneedles extending upwards from the front surface of the...
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7560351 |
Integrated circuit arrangement with low-resistance contacts and method for production thereof
An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor...
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7544580 |
Method for manufacturing passive components
A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The...
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7491601 |
Methods of forming electronic devices including electrodes with insulating spacers thereon
An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate....
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7482239 |
Methods of forming integrated circuitry
In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the...
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7473951 |
Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor,...
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7468306 |
Method of manufacturing a semiconductor device
A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on...
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7456065 |
Fabricating method of DRAM cylindrical capacitor
A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an...
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7449412 |
Interconnect circuitry, multichip module, and methods of manufacturing thereof
Methods of electroless plating metal on a dielectric material includes dipping the dielectric in a solution containing attractive catalytic metal particles and a metal salt solution. A thicker...
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7432152 |
Methods of forming HSG layers and devices
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on...
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7427545 |
Trench memory cells with buried isolation collars, and methods of fabricating same
The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar....
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7416954 |
Enhanced on-chip decoupling capacitors and method of making same
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via...
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7407862 |
Method for manufacturing ferroelectric memory device
A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact...
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7400008 |
Semiconductor device and manufacturing process therefor
An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be...
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7393742 |
Semiconductor device having a capacitor and a fabrication method thereof
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
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