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7560351 |
Integrated circuit arrangement with low-resistance contacts and method for production thereof
An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor...
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7560036 |
System and method for drug delivery and microfluidic applications using microneedles
The invention relates to a method of fabricating a microneedle array in a substrate, a drug delivery device comprising one or more microneedles extending upwards from the front surface of the...
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7544580 |
Method for manufacturing passive components
A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The...
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7491601 |
Methods of forming electronic devices including electrodes with insulating spacers thereon
An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate....
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7482239 |
Methods of forming integrated circuitry
In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the...
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7473951 |
Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor,...
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7468306 |
Method of manufacturing a semiconductor device
A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on...
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7456065 |
Fabricating method of DRAM cylindrical capacitor
A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an...
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7449412 |
Interconnect circuitry, multichip module, and methods of manufacturing thereof
Methods of electroless plating metal on a dielectric material includes dipping the dielectric in a solution containing attractive catalytic metal particles and a metal salt solution. A thicker...
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7432152 |
Methods of forming HSG layers and devices
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on...
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7427545 |
Trench memory cells with buried isolation collars, and methods of fabricating same
The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar....
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7416954 |
Enhanced on-chip decoupling capacitors and method of making same
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via...
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7407862 |
Method for manufacturing ferroelectric memory device
A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact...
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7407854 |
Method for fabricating capacitor of semiconductor device
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in...
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7400008 |
Semiconductor device and manufacturing process therefor
An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be...
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7393742 |
Semiconductor device having a capacitor and a fabrication method thereof
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
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7375003 |
Methods of manufacturing a semiconductor device
In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold...
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7374954 |
Ferroelectric register, and method for manufacturing capacitor of the same
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage...
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7368401 |
Integrated circuit having a doped porous dielectric and method of manufacturing the same
In one aspect of the invention, a method for forming an integrated circuit having an at least substantially doped porous dielectric includes forming a semiconductor device. The semiconductor device...
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7355234 |
Semiconductor device including a stacked capacitor
A stacked capacitor formed in a capacitor hole includes a bottom electrode, capacitor insulation film and a top electrode. The bottom electrode includes a plurality of islands formed on an...
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7332393 |
Method of fabricating a cylindrical capacitor
A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several...
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7332391 |
Method for forming storage node contacts in semiconductor device
A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen...
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7320924 |
Method of producing a chip-type solid electrolytic capacitor
A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The...
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7303927 |
Three-dimensional ferroelectric capacitor and method for manufacturing thereof as well as semiconductor memory device
A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization. In the ferroelectric capacitor, hemi-spherical...
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7273791 |
Methods for forming a conductive structure using oxygen diffusion through one metal layer to oxidize a second metal layer
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the...
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7271071 |
Method of forming a catalytic surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms
The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate...
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7253053 |
Methods of forming transistor devices and capacitor constructions
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more...
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7250350 |
Method and structure for integrated stacked capacitor formation
An integrated circuit device structure (and methods). The structure includes a semiconductor substrate comprising a surface. A first doped polysilicon liner is defined within a first trench region...
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7238585 |
Method of forming a storage electrode of a semiconductor device
In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer...
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7232721 |
Structures and methods for enhancing capacitors in integrated circuits
Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first...
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7229890 |
Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on...
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7153751 |
Method of forming a capacitor
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
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7152804 |
MOS electronic article surveillance, RF and/or RF identification tag/device, and methods for making and using the same
A RF MOS- or nonlinear device-based surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes (a) an inductor, (b) a first capacitor plate coupled...
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7141847 |
DRAM constructions, memory arrays and semiconductor constructions
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture...
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7115970 |
Capacitor for use in an integrated circuit
Capacitors for use in an integrated circuit are provided. One aspect of this disclosure relates to a method of making a capacitor. According to various embodiments of the method a bottom electrode...
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7112506 |
Method for forming capacitor of semiconductor device
Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a...
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7112503 |
Enhanced surface area capacitor fabrication methods
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
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7109081 |
Capacitor for semiconductor device and method of forming the same
A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode...
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7105405 |
Rugged metal electrodes for metal-insulator-metal capacitors
Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are...
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7101769 |
Method of forming a reliable high performance capacitor using an isotropic etching process
Disclosed herein is a method of forming a reliable high performance capacitor using an isotropic etching process to optimize the surface area of the lower electrodes while preventing an electrical...
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7101756 |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
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7094657 |
Method for protecting against oxidation of a conductive layer in said device
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
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7091101 |
Method of forming a device
A method of forming a device is disclosed. The method includes forming a capacitor, and forming the capacitor includes forming a first electrode. The first electrode includes at least one...
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7091084 |
Ultra-high capacitance device based on nanostructures
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin...
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7081385 |
Nanotube semiconductor devices and methods for making the same
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a...
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7081384 |
Method of forming a silicon dioxide layer
The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon...
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7071508 |
Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
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7071058 |
Methods of forming capacitors, and methods of forming DRAM circuitry
Capacitors, DRAM circuitry, and methods of forming the same are described. In one embodiment, a capacitor comprises a first container which is joined with a substrate node location and has an...
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7060615 |
Methods of forming roughened layers of platinum
A method of forming a roughened layer of platinum, including: a) providing a substrate within a reaction chamber; b) forming an adhesion layer over the substrate; c) flowing an oxidizing gas into...
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7041570 |
Method of forming a capacitor
A method of forming a capacitor is disclosed. The method includes forming a first substrate layer, and forming a first electrode on the first substrate layer. The first electrode includes at least...
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