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7612400 |
MIM device and electronic apparatus
An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film...
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7592220 |
Capacitance process using passivation film scheme
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
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7588992 |
Integrated thin-film capacitor with etch-stop layer, process of making same, and packages containing same
A thin-film capacitor assembly includes a first metal bottom electrode, a dielectric layer, a second metal etch-stop layer, and a subsequent metal top electrode. The first metal bottom electrode is...
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7557015 |
Methods of forming pluralities of capacitors
The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes...
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7544580 |
Method for manufacturing passive components
A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The...
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7534694 |
Methods of forming a plurality of capacitors
The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor...
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7531420 |
Semiconductor memory cell and corresponding method of producing same
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one...
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7524732 |
Semiconductor device with L-shaped spacer and method of manufacturing the same
A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating...
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7524724 |
Method of forming titanium nitride layer and method of fabricating capacitor using the same
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition...
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7517753 |
Methods of forming pluralities of capacitors
The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes anodically etching individual capacitor electrode...
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7504300 |
Method for fabricating semiconductor memory device having cylinder type storage node
Disclosed is a method for fabricating a semiconductor memory device capable of preventing a bunker defect caused by a pinhole or a crack on a single metal layer used as a storage node. The method...
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7491619 |
Methods of fabricating semiconductor devices
Disclosed are methods of fabricating semiconductor devices. A method may include forming a first conductive layer, a first dielectric layer, a second conductive layer, a second dielectric layer,...
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7482239 |
Methods of forming integrated circuitry
In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the...
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7468306 |
Method of manufacturing a semiconductor device
A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on...
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7456077 |
Method for interconnecting anodes and cathodes in a flat capacitor
A method includes connecting together one or more anode connection members of one or more anode foils and one or more cathode connection members of one or more cathode foils and electrically...
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7449383 |
Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same
In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided...
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7435644 |
Method of manufacturing capacitor of semiconductor device
Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating...
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7416954 |
Enhanced on-chip decoupling capacitors and method of making same
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via...
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7407862 |
Method for manufacturing ferroelectric memory device
A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact...
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7371636 |
Method for fabricating storage node contact hole of semiconductor device
A method for fabricating a storage node contact hole of a semiconductor device includes: forming an inter-layer insulation layer over a substrate; forming a hard mask over the inter-layer...
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7364967 |
Methods of forming storage capacitors for semiconductor devices
Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a...
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7361548 |
Methods of forming a capacitor using an atomic layer deposition process
Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a...
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7338610 |
Etching method for manufacturing semiconductor device
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as...
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7332391 |
Method for forming storage node contacts in semiconductor device
A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen...
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7329576 |
Double-sided container capacitors using a sacrificial layer
Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The...
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7329574 |
Methods of forming capacitor electrodes using fluorine and oxygen
A method of forming a capacitor can include etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode.
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7329572 |
Method of forming PIP capacitor
A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a...
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7320924 |
Method of producing a chip-type solid electrolytic capacitor
A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The...
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7312131 |
Method for forming multilayer electrode capacitor
A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of...
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7312130 |
Methods of forming capacitor structures including L-shaped cavities
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on...
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7312118 |
Semiconductor device and method of manufacturing the same
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode...
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7265019 |
Elastomeric CMOS based micro electromechanical varactor
A micro electro-mechanical system (MEMS) variable capacitor is described, wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate and are...
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7235452 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device is disclosed. The method comprises the steps of: forming an interlayer insulating film on a semiconductor substrate, which includes a...
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7232736 |
Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same
Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A...
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7214584 |
Method for forming semiconductor device capable of preventing bunker defect
Disclosed is a method for preventing a bunker defect generation on a lower portion of a cylinder type metal bottom electrode. The method includes the steps of: forming an etch stop layer on a...
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7186625 |
High density MIMCAP with a unit repeatable structure
A structure, apparatus and method for utilizing vertically interdigitated electrodes serves to increase the capacitor area surface while maintaining a minimal horizontal foot print. Since...
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7183171 |
Pyramid-shaped capacitor structure
A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at...
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7169665 |
Capacitance process by using passivation film scheme
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
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7161205 |
Semiconductor memory device with cylindrical storage electrode and method of manufacturing the same
There are provided a semiconductor memory device including a cylindrical storage electrode and a method of manufacturing the same. The semiconductor memory device includes an interlevel dielectric...
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7132345 |
Method for fabricating flash memory device
A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer;...
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7125781 |
Methods of forming capacitor devices
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
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7112506 |
Method for forming capacitor of semiconductor device
Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a...
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7109090 |
Pyramid-shaped capacitor structure
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at...
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7105418 |
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes...
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7081385 |
Nanotube semiconductor devices and methods for making the same
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a...
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7078311 |
Substrate-embedded capacitor, production method thereof, and circuit board
There is provided a capacitor embedded in a substrate having a small thickness and requiring only a small space for short connection lines. The substrate-embedded capacitor comprises a substrate...
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7078308 |
Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a...
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7064028 |
Semiconductor memory and method of producing the same
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of...
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7060584 |
Process to improve high performance capacitor properties in integrated MOS technology
A method of fabricating a high performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the...
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7056788 |
Method for fabricating a semiconductor device
A semiconductor device comprises: a lower contact electrode 1 ; an adhesion improving layer 3 formed on the lower contact electrode 1 ; and a capacitor including a lower electrode 4 in a...
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