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9023699 Resistive random access memory (RRAM) structure and method of making the RRAM structure  
The present disclosure provides a resistive random access memory (RRAM) cell. The RRAM cell includes a transistor, a bottom electrode adjacent to a drain region of the transistor and coplanar with...
9023711 Methods for forming a conductive material and methods for forming a conductive structure  
A method of forming a conductive material comprises forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least...
9012299 Metal-insualtor-metal (MIM) device and method of formation thereof  
In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on...
9012295 Compressive polycrystalline silicon film and method of manufacture thereof  
In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a...
9012298 Methods for reproducible flash layer deposition  
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing...
9006073 Fabrication method of phase change memory device having self-aligned bottom electrode  
A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor...
9006061 Vertical metal insulator metal capacitor  
A method of forming a capacitor comprises forming a first electrode of the capacitor over a substrate. The first electrode includes a bottom conductive plane and a plurality of first vertical...
8993404 Metal-insulator-metal capacitor formation techniques  
Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials...
8993405 Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers  
Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors...
8980653 Combinatorial optimization of interlayer parameters  
The embodiments describe methods and apparatuses for combinatorial optimization of interlayer parameters for capacitor stacks. The capacitor stacks may include a substrate, an insulating layer...
8975525 Corles multi-layer circuit substrate with minimized pad capacitance  
A multi layer interconnecting substrate has at least two spaced apart metal layers with a conductive pad on each one of the metal layers. Two different types of insulating layers are placed...
8969169 DRAM MIM capacitor using non-noble electrodes  
A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first...
8951859 Method for fabricating passive devices for 3D non-volatile memory  
A method for fabricating passive devices such as resistors and capacitors for a 3D non-volatile memory device. In a peripheral area of a substrate, alternating layers of a dielectric such as oxide...
8951914 Manufacturing method of device  
A device manufacturing method includes: sequentially forming a first sacrificial film, a first support film, a second sacrificial film, and a second support film on a semiconductor substrate;...
8946079 Semiconductor construct and manufacturing method thereof as well as semiconductor device and manufacturing method thereof  
A semiconductor construct includes a semiconductor substrate and connection pads provided on the semiconductor substrate. Some of the connection pads are connected to a common wiring and at least...
8946046 Guided path for forming a conductive filament in RRAM  
A method of forming a non-volatile memory device, includes forming a first electrode above a substrate, forming a dielectric layer overlying the first electrode, forming an opening structure in a...
8940601 Manufacturing method of semiconductor device  
A manufacturing method of a semiconductor device includes the following steps. Firstly, a lower electrode is formed over a substrate (semiconductor substrate). Successively, the lower electrode is...
8933429 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array  
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents...
8932933 Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures  
A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms....
8916436 MIM capacitor with plate having high melting point  
A method for producing an integrated device including an MIM capacitor. The method includes the steps of providing a functional substrate including functional circuits of the integrated device,...
8912629 Semiconductor devices and methods for fabricating the same  
A semiconductor device includes a substrate and a plurality of storage nodes on the substrate and extending in a vertical direction relative to the substrate. A lower support pattern is in contact...
8906773 Integrated circuits including integrated passive devices and methods of manufacture thereof  
Embodiments of integrated passive devices (e.g., metal insulator metal, or MIM, capacitors) and methods of their formation include depositing a composite electrode over a semiconductor substrate...
8901704 Integrated circuit and manufacturing method thereof  
An integrated circuit and a manufacturing method thereof are provided. A chip size can be reduced by forming a memory device in which a ferroelectric capacitor region is laminated on a DRAM. The...
8901705 3D integration of a MIM capacitor and a resistor  
The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which...
8889507 MIM capacitors with improved reliability  
A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer...
8889522 High breakdown voltage embedded MIM capacitor structure  
Methods and devices related to a plurality of high breakdown voltage embedded capacitors are presented. A semiconductor device may include gate material embedded in an insulator, a plurality of...
8884350 Semiconductor device  
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted...
8883606 Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same  
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor...
8884288 Semiconductor structure with means for testing metal-insulator-metal capacitors  
The present invention provides a semiconductor structure for testing MIM capacitors. The semiconductor structure comprises: a first metal layer comprising at least a first circuit area and a...
8877521 Semiconductor ferroelectric device, manufacturing method for the same, and electronic device  
A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a...
8878269 Band gap improvement in DRAM capacitors  
A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of an compound high k dielectric material. The dielectric material further comprises a...
8877594 CMOS device for reducing radiation-induced charge collection and method for fabricating the same  
A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly...
8878341 Graphene-based composite materials, method of manufacture and applications thereof  
Disclosed herein is a composite material comprising a relaxor ferroelectric material and a hydrazine-reduced graphene oxide, wherein the weight ratio of the composite material to the...
8871588 Reverse construction integrated circuit  
A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated...
8871559 Methods for fabricating phase change memory devices  
Provided is a method for fabricating a phase change memory device. The method includes forming a plurality of bottom electrodes on a substrate, forming a first mold layer on the substrate to...
8865558 Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device  
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process...
8866260 MIM decoupling capacitors under a contact pad  
An integrated circuit structure includes one or more external contact pads with decoupling capacitors, such as metal-insulator-metal (MIM) capacitors, formed directly thereunder. In an embodiment,...
8865536 Semiconductor device and manufacturing method thereof  
As for a bypass capacitor, a first capacitor insulating film, together with a tunnel insulating film of a storage element, is formed of a first insulating film, a first electrode being a lower...
8853053 Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus  
A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an...
8853049 Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices  
A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of a first electrode that serves as a template for promoting the high k phase of a...
8847353 Semiconductor device and data processing system using the same  
Capacitance blocks (first block and second block) respectively formed on two different adjacent common pad electrodes are electrically connected in series through an upper electrode. A distance...
8846542 Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material  
The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride...
8841748 Semiconductor device comprising a capacitor and an electrical connection via and fabrication method  
A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least...
8841749 Semiconductor device comprising a capacitor and an electrical connection via, and fabrication method  
A main blind hole is formed in a front face of a wafer having a rear face. A through capacitor is formed in the main blind hole including a conductive outer electrode, a dielectric intermediate...
8835274 Interconnects and semiconductor devices including at least two portions of a metal nitride material and methods of fabrication  
Metal-insulator-metal capacitors with a bottom electrode including at least two portions of a metal nitride material. At least one of the portions of the metal nitride material includes a...
8835252 Methods of fabricating semiconductor devices having increased areas of storage contacts  
Methods of fabricating semiconductor device are provided including forming first through third silicon crystalline layers on first through third surfaces of an active region; removing the first...
8835273 High temperature ALD process of metal oxide for DRAM applications  
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure...
8829356 Packaging substrate having a passive element embedded therein and method of fabricating the same  
A packaging substrate includes: a dielectric layer unit having top and bottom surfaces; a positioning pad embedded in the bottom surface of the dielectric layer unit; at least a passive element...
8828821 Fabrication of semiconductor stacks with ruthenium-based materials  
This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is...
8816475 Semiconductor devices including capacitors and methods of manufacturing the same  
Semiconductor devices having capacitors are provided. The semiconductor device includes spiral storage nodes disposed on a semiconductor substrate to vertically extend along spiral lines, a...