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7618874 |
Methods of forming capacitors
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being...
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7611959 |
Zr-Sn-Ti-O films
A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
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7611958 |
Method of making a semiconductor element
A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode...
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7611945 |
Method and resulting structure for fabricating DRAM capacitor structure
A method for forming a capacitor structure for a dynamic random access memory device. The method includes forming a device layer overlying a semiconductor substrate, e.g., silicon wafer. The method...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7608517 |
Method for forming capacitor of semiconductor device
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps...
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7608503 |
Side wall active pin memory and manufacturing method
A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side...
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7605037 |
Manufacturing method for an integrated semiconductor memory device and corresponding semiconductor memory device
The present invention provides an integrated semiconductor memory device comprising: a semiconductor substrate; a plurality of active area lines formed in said semiconductor substrate, each of...
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7602599 |
Metal-metal capacitor and method of making the same
A method of making a metal-metal capacitor is disclosed, in which a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, and a third metal layer are formed...
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7601604 |
Method for fabricating conducting plates for a high-Q MIM capacitor
A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench...
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7595250 |
Semiconductor device and method of manufacturing the same
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the...
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7592657 |
Semiconductor device and method of manufacturing the same
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11 , a crystalline conductive film 21 , a first...
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7592220 |
Capacitance process using passivation film scheme
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
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7592218 |
Methods of forming vertical transistors
A vertical transistor forming method includes forming a first pillar above a first source/drain and between second and third pillars, providing a first recess between the first and second pillars...
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7585741 |
Methods of forming capacitors
The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive...
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7585723 |
Method for fabricating capacitor
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
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7579643 |
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The...
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7579253 |
Method for cleaning a semiconductor wafer
Bottom electrodes of stacked capacitor DRAM cells are formed by depositing a metal layer on the side walls of trenches within a hard mask layer, which serves as a mold for the bottom electrode...
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7576382 |
Semiconductor integrated device and method of providing shield interconnection therein
A method of providing shield interconnection, the method shielding an interconnection pattern to be shielded with shield interconnection patterns for shielding on the substrate of a semiconductor...
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7575940 |
Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric film
Provided are a dielectric film, a method of manufacturing the same, and a semiconductor capacitor having the dielectric film. The semiconductor capacitor includes a lower electrode, a ferroelectric...
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7573088 |
DRAM array and electronic system
The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention...
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7572711 |
Method of manufacturing a semiconductor device
In an embodiment, a simplified method of manufacturing a semiconductor device reduces a step between cell and peripheral areas. First and second openings are formed through a plurality of thin...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7572698 |
Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom...
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7572695 |
Hafnium titanium oxide films
Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of...
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7569460 |
Capacitor structure and method for preparing the same
A capacitor structure comprises a substrate having a contact plug, a conductive cylinder positioned on the substrate and an electroplating structure covering the conductive cylinder, wherein a...
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7569453 |
Contact structure
This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or...
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7566611 |
Manufacturing method for an integrated semiconductor structure
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a...
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7563688 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device includes forming a stack structure providing a plurality of open regions, the stack structure including an insulation layer and a hard...
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7563687 |
Method of fabricating a capacitor by using a metallic deposit in an interconnection dielectric layer of an integrated circuit
A manufacturing process for a capacitor in an interconnection layer includes the following stages: Deposit of a first metallic layer ( 21 ); Deposit of a first insulator layer ( 31 ) on the first...
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7563672 |
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
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7560796 |
Capacitor and capacitor array
In a capacitor and a capacitor array configured for reducing an effect of parasitic capacitance, the capacitor array can have a matrix configuration that includes a plurality of unit capacitors....
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7560334 |
Method and system for incorporating high voltage devices in an EEPROM
A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional...
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7557014 |
Semiconductor system-in-package
A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer...
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7557013 |
Methods of forming a plurality of capacitors
A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode...
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7557011 |
Semiconductor device and method for fabricating the same
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device....
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7557003 |
MIM capacitor manufacturing method
Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a...
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7553738 |
Method of fabricating a microelectronic device including embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer...
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7550362 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical...
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7547638 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes the steps of forming a circuit element on a semiconductor substrate, forming an insulation film covering the circuit element, forming a...
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7544967 |
Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate...
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7544580 |
Method for manufacturing passive components
A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The...
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7544562 |
Method for manufacturing a capacitor electrode structure
A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on...
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7541254 |
Method of manufacturing thin film capacitor
A first electrode layer having protrusions and depressions on its surface are formed on a lower insulating layer on a semiconductor substrate, and a sacrificial layer is formed on the first...
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7538007 |
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed...
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7538006 |
Annular damascene vertical natural capacitor
A method for forming a vertical natural capacitor in an integrated circuit is disclosed. In one embodiment, the method includes forming a first set of concentric conductive annular structures in a...
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7535745 |
Ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable...
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7534694 |
Methods of forming a plurality of capacitors
The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor...
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7534693 |
Thin-film capacitor with a field modification layer and methods for forming the same
A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top...
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7531422 |
Method for fabricating capacitor in semiconductor device using hafnium terbium oxide dielectric layer
The present invention relates to a method for fabricating a capacitor in a semiconductor device through the use of hafnium-terbium oxide (Hf 1-x Tb x O) as a dielectric layer. The method includes...
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