Matches 301 - 350 out of 1913 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7081385 Nanotube semiconductor devices and methods for making the same  
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a...
7078293 Method for fabricating optical interference display cell  
A method for fabricating an optical interference display cell is described. A first electrode and a sacrificial layer are sequentially formed on a transparent substrate and at least two openings...
7078310 Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies  
According to one embodiment, a structure comprises an electrode of a lower MIM capacitor situated in a first interconnect metal layer of a semiconductor die. The structure further comprises a...
7078309 Methods for producing a structured metal layer  
The invention provides methods which can be used to structure even precious metal electrodes with conventional CMP steps, in particular with the aid of conventional slurries such as are already...
7078242 Manufacturing method of semiconducter device  
An IrO x film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing...
7074624 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory  
A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a...
7074669 Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same  
A semiconductor integrated circuit device includes a plurality of capacitor elements, which are separated from each other by a first insulating film on a plane. Each of the plurality of capacitor...
7074670 Method of forming storage node of capacitor in semiconductor memory, and structure therefore  
In one embodiment, an etch stop layer and a mold layer is sequentially formed on a semiconductor substrate having an interlayer insulation layer. The interlayer insulation layer includes a...
7074667 Semiconductor memory device including storage nodes and resistors and method of manufacturing the same  
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments...
7074625 Semiconductor device and method of manufacturing the same  
There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of...
7071057 Methods of fabricating MIM capacitors of semiconductor devices  
Methods of fabricating a MIM capacitor and a dual damascene structure of a semiconductor device are disclosed. A disclosed method comprises forming a first conducting material as a lower...
7071007 Method of forming a low voltage drive ferroelectric capacitor  
A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing...
7071053 Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD  
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a...
7071056 Method of forming a dual-sided capacitor  
A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon...
7071071 Method of manufacturing semiconductor device  
A lower electrode of a capacitor element is formed by manufacturing a crown structure while using a first conducting material such as titanium nitride or the like excellent in mechanical strength...
7071055 Method of forming a contact structure including a vertical barrier structure and two barrier layers  
This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or...
7067385 Support for vertically oriented capacitors during the formation of a semiconductor device  
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is...
7064028 Semiconductor memory and method of producing the same  
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of...
7064043 Wafer bonded MOS decoupling capacitor  
A technique for forming a MOS capacitor ( 100 ) that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor ( 100 ) is formed separately from the particular circuit device ( 170...
7060557 Fabrication of high-density capacitors for mixed signal/RF circuits  
A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a...
7060584 Process to improve high performance capacitor properties in integrated MOS technology  
A method of fabricating a high performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the...
7056786 Self-aligned buried contact pair and method of forming the same  
A self-aligned buried contact (BC) pair includes a substrate having diffusion regions; an oxide layer exposing a pair of diffusion regions formed on the substrate; bit lines formed between adjacent...
7056803 Method for forming capacitor of semiconductor device  
Disclosed is a method for forming a capacitor of a semiconductor device. The method comprises the steps of: forming a nitride film for storage electrode on a semiconductor substrate; forming an...
7052951 Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices  
Ferroelectric memory devices and methods for fabricating such devices are provided. The ferroelectric memory device may comprise one or more interlayer dielectric layers on a semiconductor...
7052967 Method for fabricating capacitor array preventing crosstalk between adjacent capacitors in semiconductor device  
A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor...
7049205 Stacked capacitor and method for preparing the same  
The present invention discloses a stacked capacitor having interdigital electrodes and method for preparing the same. The stacked capacitor comprises a first interdigital electrode, a second...
7049204 High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process  
A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer...
7049203 Semiconductor device having a capacitor and method of fabricating same  
A semiconductor device comprises a semiconductor substrate and an interlayer insulating layer formed on the semiconductor substrate. The interlayer insulating layer preferably has a contact pad...
7041551 Device and a method for forming a capacitor device  
A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the...
7038296 Electrical component structure  
An electrical component structure ( 14 ) comprises a plurality of overlying substantially parallel layers ( 15, 16 ). Each layer ( 15, 16 ) provides a lattice ( 17, 20 ) comprising a first set of...
7037801 Method for forming capacitor of semiconductor device  
Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a...
7034350 Capacitors including a cavity containing a buried layer  
Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is...
7029970 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a...
7029984 Method for fabricating semiconductor device  
A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for...
7029983 Methods of forming MIM type capacitors by forming upper and lower electrode layers in a recess that exposes a source/drain region of a transistor and MIM capacitors so formed  
A MIM capacitor can be formed by forming an insulating layer on a source/drain region of a transistor. A first pattern is formed on the insulating layer. A recess is formed in the insulating layer...
7029968 Method of forming a PIP capacitor  
A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor in a mixed mode semiconductor device. A floating gate of a split gate transistor and a bottom electrode of a PIP capacitor...
7022569 Lower electrode contact structure and method of forming the same  
Lower electrode contact structures and methods of forming the same provide an interface having a large surface area between a lower electrode and the underlying layers. The lower electrode is in...
7023042 Method of forming a stacked capacitor structure with increased surface area for a DRAM device  
A process for forming a DRAM stacked capacitor structure with increased surface area, has been developed. The process features forming lateral grooves in the sides of a polysilicon storage node...
7022581 Interdigitaded capacitors  
The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations...
7020941 Method for manufacturing a multilayer ceramic capacitor  
A method for manufacturing a multilayer ceramic capacitor includes the steps of forming a ceramic slurry, forming ceramic green sheets from the ceramic slurry, printing internal electrode patterns...
7019351 Transistor devices, and methods of forming transistor devices and circuit devices  
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more...
7018854 Semiconductor device and method for manufacturing the same  
The invention provides a semiconductor device and a method for manufacturing the same that are capable of improving the product performance and operational efficiency of a cross-point FeRAM, as...
7018853 Stepped structure for a multi-rank, stacked polymer memory device and method of making same  
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective...
7015533 Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions  
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
7015093 Capacitor integration at top-metal level with a protection layer for the copper surface  
An on-chip decoupling capacitor ( 106 ) and method of fabrication. The decoupling capacitor ( 106 ) is integrated at the top metal interconnect level ( 104 ) and includes surface protection layer (...
7015094 Method of fabricating a ferromagnetic memory device  
A ferroelectric memory device and a method of fabricating the same are disclosed. Four interlayer dielectric layers are stacked on cell array and peripheral circuit regions on a semiconductor...
7015110 Method and structure of manufacturing high capacitance metal on insulator capacitors in copper  
An improved semiconductor integrated circuit device structure. The device structure includes a substrate. A thickness of first insulating material is overlying the substrate. A capacitor region...
7011999 Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfet  
A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and...
7012001 Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode  
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive...
7011978 Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions  
The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the...
Matches 301 - 350 out of 1913 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >