Matches 251 - 300 out of 1913 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7163859 Method of manufacturing capacitors for semiconductor devices  
Capacitors for semiconductor devices and methods of fabricating such capacitors are provided. The disclosed capacitor comprises an interlayer dielectric layer (ILD) pattern having an opening...
7160817 Dielectric material forming methods  
A dielectric material forming method includes forming a first monolayer and forming a second monolayer on the first monolayer, one of the first and second monolayers comprising tantalum and oxygen...
7160772 Structure and method for integrating MIM capacitor in BEOL wiring levels  
A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level,...
7161205 Semiconductor memory device with cylindrical storage electrode and method of manufacturing the same  
There are provided a semiconductor memory device including a cylindrical storage electrode and a method of manufacturing the same. The semiconductor memory device includes an interlevel dielectric...
7160785 Container capacitor structure and method of formation thereof  
Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the...
7157348 Method for fabricating capacitor device  
After a capacitor device including a lower electrode, a capacitor dielectric film made from a ferroelectric film and an upper electrode is formed on a substrate, an insulating film covering the...
7157330 Process for fabricating semiconductor device  
A semiconductor device comprising: a first insulation film 60 formed above a base substrate 10 ; a second insulation film 61 formed on the first insulation film and having different etching...
7153751 Method of forming a capacitor  
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
7153752 Methods for forming capacitors and contact holes of semiconductor devices simultaneously  
A method for forming a capacitor and a contact hole of a semiconductor device substantially simultaneously is disclosed. According to one example, a metal layer and a TiN layer are deposited in...
7153704 Method of fabricating a ferroelectric capacitor having a ferroelectric film and a paraelectric film  
A method of fabricating a ferroelectric capacitor that can inhibit ferroelectric characteristics from deteriorating includes forming a lower electrode film over from on a top surface of a plug...
7153727 Semiconductor device and method of manufacturing the same  
Disclosed herein are a semiconductor device and a method of manufacturing the same that increases the reliability of these devices as size design limitations decrease. Generally, a first insulating...
7153739 Method for manufacturing a capacitor of a semiconductor device  
The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a...
7151039 Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same  
In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group...
7151026 Semiconductor processing methods  
Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is...
7151025 Method of manufacturing a semiconductor device with self-aligned contacts  
A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said...
7148146 Method of fabricating an integral capacitor and gate transistor having nitride and oxide polish stop layers using chemical mechanical polishing elimination  
A system, apparatus and/or method is provided for fabricating an integrated capacitor during the fabrication of a transistor employing chemical mechanical polishing of a gate electrode of the...
7135369 Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9  
An atomic layer deposited ZrAl x O y dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7132326 Method of fabricating semiconductor device by exposing upper sidewalls of contact plug to form charge storage electrode  
According to some embodiments, a method includes forming at least two contact plugs that penetrate an insulating layer to connect with a semiconductor substrate. The contact plugs have an upper...
7132709 Semiconductor device including a capacitor having a capacitive insulating film of an insulating metal oxide  
A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A...
7129129 Vertical device with optimal trench shape  
A method of forming a trench in a semiconductor substrate includes a step of converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to...
7129133 Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film  
Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an...
7125767 Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same  
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein...
7125781 Methods of forming capacitor devices  
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
7125766 Method of forming capacitor for semiconductor device  
A method of forming a capacitor for a semiconductor device is disclosed. According to the method, a silicon germanium layer and an oxide layer are used as mold layers for forming a storage...
7126206 Distributed capacitor array  
A capacitor structure in an integrated circuit includes a capacitor region defined within the boundaries thereof with an active circuit layer formed on the surface of the semiconductor substrate. A...
7126182 Memory circuitry  
The invention includes memory circuitry. In one implementation, memory circuitry includes a memory array comprising a plurality of memory cell capacitors. Individual of the capacitors include a...
7122441 Method of fabricating a plurality of ferroelectric capacitors  
In one embodiment, a plurality of bottom electrodes spaced apart from each other are formed on a lower insulating layer. A high-k dielectric layer and an upper conductive layer are sequentially and...
7122440 Semiconductor device and fabrication method thereof  
A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes...
7118985 Method of forming a metal-insulator-metal capacitor in an interconnect cavity  
A metal-insulator-metal capacitor is embedded in an interconnect layer of an integrated circuit (IC). The interconnect layer has a cavity, and the capacitor is formed in the cavity with one of the...
7118959 Integrated circuit capacitor having antireflective dielectric  
A capacitor ( 100 ) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor ( 100 ) has conductive top and bottom electrodes ( 140, 144 ) and a...
7115467 Metal insulator metal (MIM) capacitor fabrication with sidewall barrier removal aspect  
A method ( 10 ) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A layer...
7115509 Method for forming polysilicon local interconnects  
Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects that allow a smaller array feature size and therefore facilitate forming...
7115468 Semiconductor device and method for fabricating the same  
A semiconductor device and a fabricating method for the same are disclosed, in which when forming a capacitor sacrificial film pattern, even if a misalignment occurs, the degradation of the...
7112504 Method of forming metal-insulator-metal (MIM) capacitors at copper process  
As shown in FIG. 10 , using photoresist capacitance trench masking portion 43 as a mask, the exposed portions 70, 72 of the patterned capacitance dielectric layer 32 ′ between the...
7112508 Method for forming conductive material in opening and structure regarding same  
Method and structure use support layers to assist in planarization processes to form conductive materials (e.g., a Group VIII metal) in an opening. Further, such method and structure may use a...
7111386 Lead plating method for GMR head manufacture  
A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the...
7112507 MIM capacitor structure and method of fabrication  
A method of forming a metal-insulator-metal (MIM) capacitor wherein a plate of a MIM capacitor is formed in the entire thickness of a metallization layer of a semiconductor device. At least one...
7112487 Method for fabricating a stacked capacitor array having a regular arrangement of a plurality of stacked capacitors  
The present invention provides a method for fabricating a stacked capacitor array ( 1 ), which comprises a regular arrangement of a plurality of stacked capacitors ( 2 ), with a stacked capacitor (...
7109090 Pyramid-shaped capacitor structure  
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at...
7109080 Method of forming capacitor over bitline contact  
A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact...
7109089 Semiconductor fabrication using a collar  
In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of...
7105418 Multiple stacked capacitors formed within an opening with thick capacitor dielectric  
For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes...
7105417 Method for fabricating capacitor of semiconductor device  
The present invention provides a method of fabricating a capacitor for a semiconductor device. The method includes: forming sequentially a lower electrode and a dielectric layer having a high...
7105405 Rugged metal electrodes for metal-insulator-metal capacitors  
Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are...
7105388 Method of forming at least one interconnection to a source/drain region in silicon-on-insulator integrated circuitry  
In one aspect, the invention provides a method of forming an electrical connection in an integrated circuitry device. According to one preferred implementation, a diffusion region is formed in...
7091085 Reduced cell-to-cell shorting for memory arrays  
Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode...
7091102 Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby  
An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on...
7087482 Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same  
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process...
7084027 Method for producing an integrated circuit  
The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate ( 1 ) with a contacting circuit area (SS); providing an...
7084042 Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same  
A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer...
Matches 251 - 300 out of 1913 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >