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7459362 |
Methods of forming DRAM arrays
The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention...
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7456072 |
Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer...
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7456421 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods
A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable...
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7456077 |
Method for interconnecting anodes and cathodes in a flat capacitor
A method includes connecting together one or more anode connection members of one or more anode foils and one or more cathode connection members of one or more cathode foils and electrically...
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7452769 |
Semiconductor device including an improved capacitor and method for manufacturing the same
In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on...
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7452783 |
Capacitor for a semiconductor device and method of forming the same
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and...
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7449391 |
Methods of forming plurality of capacitor devices
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
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7449390 |
Methods of forming memory
Methods of forming memory are described. According to one arrangement, a method of forming memory includes forming a plurality of word lines over a substrate, the word lines having insulating...
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7449382 |
Memory device and fabrication method thereof
A memory device is disclosed. A substrate is provided. A plurality of pillars is disposed on the substrate. Each pillar has a plurality of epitaxial layers, has a first sidewall and a second...
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7445990 |
Methods of forming a plurality of capacitors
A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor...
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7446391 |
Electro-resistance element and method of manufacturing the same
An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has...
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7435641 |
Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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7435654 |
Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and...
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7432151 |
Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device that forms a capacitor and metal interconnection in the same level, simultaneously using a damascene process for forming a metal interconnection. A...
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7425493 |
Methods of forming dielectric structures and capacitors
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which...
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7422954 |
Method for fabricating a capacitor structure
A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first...
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7422943 |
Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors
Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer...
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7419870 |
Method of manufacturing a flash memory device
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide...
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7419873 |
Method and apparatus for providing flexible partially etched capacitor electrode interconnect
The present subject matter includes a capacitor stack disposed in a case, the capacitor stack including one or more substantially planar electrode layers. The one or more substantially planar...
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7416953 |
Vertical MIM capacitors and method of fabricating the same
A method of fabricating a vertical MIM capacitor. An insulation layer is formed on the substrate. The insulation layer is patterned to form an opening in a predetermined area of a core electrode....
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7414297 |
Capacitor constructions
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
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7410510 |
Process of producing activated carbon for electrode of electric double layer capacitor
A process for producing an activated carbon for an electrode of an electric double-layer capacitor, includes a step of subjecting a carbonized material to an alkali activating treatment, wherein...
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7408232 |
Semiconductor device and method for fabricating the same
A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a...
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7407862 |
Method for manufacturing ferroelectric memory device
A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact...
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7405121 |
Semiconductor device with capacitors and its manufacture method
An interlayer insulating film ( 22 ) is formed on a semiconductor substrate. A conductive plug ( 25 ) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier...
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7404829 |
Electrode-separator combination for improved assembly of layered electrolytic capacitors
This disclosure provides methods for assembling multiple anode stacked capacitor configurations with a temporary adhesive to aide in the alignment of separator materials and electrodes without...
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7405167 |
Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of...
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7405122 |
Methods for fabricating a capacitor
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer....
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7402183 |
High capacitance cathode foil produced by abrasion process using titanium nitride powder
A dry titanium nitride (TiN) powder abrasion method roughens the surface of a valve metal foil for use as a cathode in an electrolytic capacitor. This increases the surface area of the foil,...
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7402488 |
Method of manufacturing a semiconductor memory device
A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer,...
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7399689 |
Methods for manufacturing semiconductor memory devices using sidewall spacers
Storage nodes for semiconductor memory devices may be fabricated by repeatedly forming conductive and insulating spacers on mold oxide layer pattern sidewalls, to thereby obtain fine line patterns...
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7398595 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an...
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7393742 |
Semiconductor device having a capacitor and a fabrication method thereof
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
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7387939 |
Methods of forming semiconductor structures and capacitor devices
The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive...
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7384856 |
Method of making an internal capacitive substrate for use in a circuitized substrate and method of making said circuitized substrate
A method of forming a capacitive substrate in which first and second conductors are formed opposite a dielectric, with one of these electrically coupled to a thru-hole connection. Each functions as...
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7382012 |
Reducing parasitic capacitance of MIM capacitor in integrated circuits by reducing effective dielectric constant of dielectric layer
A memory device having improved sensing speed and reliability and a method of forming the same are provided. The memory device includes a first dielectric layer having a low k value over a...
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7381614 |
Method for fabricating a semiconductor memory device that includes silicidizing a portion of a platinum group layer to form a silicide region and selectively removing the silicide region to define a bottom electrode of a capacitor
The semiconductor memory device comprises a glue layer defining a cylinder shell, a bottom electrode made of a material of the platinum group and covering the inner face and the outer face of the...
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7381613 |
Self-aligned MIM capacitor process for embedded DRAM
A semiconductor device includes a group of capacitors and a trench. Each capacitor includes a first conductive material layer, a dielectric layer, and a second conductive material layer. The...
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7381943 |
Neutral particle beam processing apparatus
The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma...
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7378329 |
Method for manufacturing semiconductor device
Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection...
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7375002 |
MIM capacitor in a semiconductor device and method therefor
A MIM capacitor is formed over one or more metal interconnect layers in a semiconductor device. The capacitor has a lower plate electrode and an upper plate electrode. An insulator is formed...
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7374954 |
Ferroelectric register, and method for manufacturing capacitor of the same
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage...
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7374585 |
Method for producing solid electrolytic capacitor
A production method for a solid electrolytic capacitor comprises the steps of mixing a metal alkoxybenzenesulfonate and/or a metal alkylsulfonate as an oxidizing agent and an electrically...
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7368774 |
Capacitor and its manufacturing method, ferroelectric memory device, actuator, and liquid jetting head
A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate...
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7364966 |
Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same
A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one...
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7365020 |
Method for etching upper metal of capacitator
A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film...
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7364979 |
Capcitor with single crystal tantalum oxide layer and method for fabricating the same
A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a...
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7364964 |
Method of fabricating an interconnection layer above a ferroelectric capacitor
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H 2 attack without damaging the function of an interlayer insulating film covering...
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7361549 |
Method for fabricating memory cells for a memory device
The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit ( 100 ), in which method a shaping layer ( 104 ) is provided...
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7361547 |
Method for forming a capacitor for use in a semiconductor device
A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an...
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