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6656789 |
Capacitor for highly-integrated semiconductor memory devices and a method for manufacturing the same
The present invention relates to a capacitor structure suitable for semiconductor devices and a method for manufacturing such capacitors for highly-integrated memory devices using a TaON dielectric...
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6656786 |
MIM process for logic-based embedded RAM having front end manufacturing operation
A method and system for manufacturing an MIM capacitor for utilization with a logic-based embedded DRAM device. At least one transistor, an interlayer dielectric, at least one contact and at least...
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6656844 |
Method of forming a protected crown capacitor structure utilizing the outside crown surface to increase capacitance
A method of forming a DRAM capacitor structure featuring increased surface area, has been developed. The method features a polysilicon top plate structure located overlying an array comprised of...
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6656787 |
Method for fabricating non-volatile memories
A method for fabricating a semiconductor component includes the steps of applying an electrode material and a metal-oxide-containing layer on a substrate surface and selectively etching the...
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6653186 |
Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer
Integrated circuit capacitors and methods of fabricating integrated circuit capacitors, according to the present invention, provide an electrically insulating electrode support layer having an...
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6653228 |
Method for preparing semiconductor including formation of contact hole using difluoromethane gas
A method for forming a contact hole in a semiconductor device includes the steps of forming a polymer layer on an upper portion and a side wall of photo resist mask, while etching an oxide layer...
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6653230 |
Semiconductor device having concave electrode and convex electrode and method of manufacturing thereof
It is intended to enable simultaneous formation of concave capacitor storage electrodes and a convex bit contact plug electrode and thereby makes it possible to reduce spaces of margins for...
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6653198 |
Method for fabricating capacitor in semiconductor device and capacitor fabricated thereby
A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on...
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6649502 |
Methods of forming multilayer dielectric regions using varied deposition parameters
A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere...
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6649468 |
Method for fabricating a microelectronic component
A method for fabricating a microelectronic component includes the step of applying a barrier against the passage of hydrogen to a storage capacitor having a ferroelectric dielectric or a...
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6649469 |
Methods of forming capacitors
A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings...
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6649464 |
Method for manufacturing semiconductor device having capacitor and via contact
Methods for manufacturing semiconductor devices are provided. First and second portions of a first metal layer are formed in a first interlayer insulating layer. A second interlayer insulating...
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6645809 |
Process for producing a capacitor configuration
In order to provide a particularly space-saving capacitor configuration in a memory device, a plurality of second electrode regions which are not in direct electrical contact with one another are...
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6645822 |
Method for manufacturing a semiconductor circuit system
To simplify a method for manufacturing a memory device having a multiplicity of MRAM cells in a crossing area of conductor elements, a method for manufacturing a semiconductor circuit system, in...
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6645811 |
Capacitor using high dielectric constant film for semiconductor memory device and fabrication method therefor
A capacitor using a high dielectric constant film for a semiconductor memory device, and a fabrication method thereof are provided that improve a process margin and achieve a stable contact. The...
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6645810 |
Method to fabricate MIM capacitor using damascene process
In one embodiment, the present invention recites forming a number of first openings in a first substrate. The present embodiment then recites forming a copper region within each first openings...
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6645779 |
FeRAM (ferroelectric random access memory) and method for forming the same
A ferroelectric random access memory (FeRAM) device including a semiconductor substrate, a transistor, a first interlayer insulating film formed on the transistor, a plug buried in a contact hole...
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6642101 |
Semiconductor memory device and method of producing same
A semiconductor memory device having a high quality storage node electrode preventing for example connection failure between a contact plug and the storage node electrode, including first...
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6642102 |
Barrier material encapsulation of programmable material
A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials,...
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6642100 |
Semiconductor device with capacitor structure having hydrogen barrier layer and method for the manufacture thereof
A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure, formed on top...
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6642099 |
Method of manufacturing compound semiconductor device
There is provided a compound semiconductor device having a capacitor, to prevent a leakage current flowing between an upper electrode and a lower electrode of the capacitor via an insulating...
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6639267 |
Capacitor dielectric having perovskite-type crystalline structure
A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the...
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6638809 |
Methods of forming semiconductor circuit constructions and capacitor constructions
In one aspect, the invention encompasses a semiconductor circuit construction including a material which comprises Q, R, S and B. In such construction, Q comprises one or more refractory metals, R...
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6638817 |
Method for fabricating dram cell array not requiring a device isolation layer between cells
The present invention relates to a DRAM cell array and a fabrication method thereof, and which includes: a semiconductor substrate on which a plurality of active regions and isolation regions in a...
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6638810 |
Tantalum nitride CVD deposition by tantalum oxide densification
The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide...
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6635528 |
Method of planarizing a conductive plug situated under a ferroelectric capacitor
An embodiment of the instant invention is a method of fabricating a planar conductive via in an opening through a dielectric layer having a top surface, a bottom surface and the opening having...
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6635496 |
Plate-through hard mask for MRAM devices
A method of fabricating an MRAM device includes patterning a magnetic stack material layer ( 142 ) using a herd mask ( 146 ) formed by a “plate-through” technique. A resist ( 144 ) is deposited...
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6635523 |
Semiconductor device and method of manufacturing the same
The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a...
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6632720 |
Method of constructing a capacitor stack for a flat capacitor
A method of manufacturing a capacitor stack for a flat capacitor includes sequentially stacking a plurality of capacitor layers on top of each other such that each one of the plurality of capacitor...
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6632721 |
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by...
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6630387 |
Method for forming capacitor of semiconductor memory device using electroplating method
A method of forming a capacitor of a semiconductor memory device is provided. In the capacitor formation, a insulating layer is deposited over a semiconductor substrate, and patterned into a...
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6630378 |
Method of fabricating a dynamic random access memory device having stacked capacitor memory cell arrays
A method of forming stacked capacitors over first field effect transistors having been provided in a memory cell area of a semiconductor memory device and at least a second field effect transistor...
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6627941 |
Capacitor for semiconductor device and method for manufacturing the same
A capacitor for a semiconductor device is disclosed with increased capacitance which is produced by a simplified manufacturing process. The capacitor has a storage node electrode structure formed...
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6627495 |
Method for forming a capacitor in a semiconductor device
A method for forming a capacitor in a semiconductor device is disclosed, in which the dielectric medium of the capacitor is a ferroelectric film or a high dielectric constant film. In the method...
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6627496 |
Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration
A process for producing structured layers on a base body, in particular a semiconductor body, includes the steps of providing a first layer, structuring the first layer with a partial or complete...
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6627494 |
Method for forming gate electrode of flash memory
The present invention discloses a method for forming a gate electrode of a flash memory. A tunnel oxide film is formed on the whole surface of a semiconductor substrate. A conductive film of a...
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6627493 |
Self-aligned method for fabricating a capacitor under bit-line (cub) dynamic random access memory (DRAM) cell structure
Within a method for fabricating a dynamic random access memory (DRAM) cell structure there is first anisotropically sequentially etched a blanket hard mask layer and a blanket capacitor plate layer...
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6627497 |
Semiconductor integrated circuit device and method of manufacturing the same
A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage...
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6624038 |
Capacitor electrode having uneven surface formed by using hemispherical grained silicon
A lower electrode of a capacitor which has uneven surface formed by using HSG-Si (hemispherical grained silicon) and which is used, for example, in a semiconductor device such as DRAM device. Such...
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6620740 |
Methods to form electronic devices
In one aspect, a method of forming an electronic device includes forming a layer of undoped oxide over a layer of doped oxide. A first electrode is formed proximate thereto. With the undoped oxide...
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6620701 |
Method of fabricating a metal-insulator-metal (MIM) capacitor
A method of manufacturing a metal-insulator-metal capacitor (MIMCap) ( 36 ) including first conductive lines ( 15 ), capacitor dielectric ( 26 ) and second conductive lines ( 28 ), the MIMCap ( 36...
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6620688 |
Method for fabricating an extended drain metal oxide semiconductor field effect transistor with a source field plate
An extended drain metal oxide semiconductor field effect transistor (EDMOSFET) with a source field plate is provided. The EDMOSFET includes: a first-conductivity type semiconductor substrate; a...
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6620700 |
Silicided undoped polysilicon for capacitor bottom plate
A capacitor ( 110 ) having a bottom plate ( 104 ) that includes undoped polysilicon ( 106 ) which has been silicided ( 108 ). An advantage of the invention is providing a capacitor ( 110 ) having...
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6620680 |
Method of forming a contact structure and a container capacitor structure
Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is...
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6617635 |
Integrated circuit devices having contact and container structures
Integrated circuitry fabricated using methods for forming contact structures and container structures, as described herein, are provided. The integrated circuitry formed by the methods of the...
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6617208 |
High capacitance damascene capacitors
The invention describes a high capacitance damascene capacitor. A etch-stop/capacitor dielectric layer 60 is sandwiched between two conductive plates 40 and 75 to form an integrated circuit...
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6617221 |
Method of making capacitors
A method for manufacturing capacitors is disclosed. The method is applicable to a capacitor whose upper electrode area is smaller than the lower electrode area. It is featured in that a material,...
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6617205 |
Semiconductor storage device and process for manufacturing the same
A capacitor consisting of a storage electrode ( 19 ), a capacitor dielectric film ( 20 ) and a plate electrode ( 21 ) is formed in a trench formed through dielectric films ( 6, 8, 10 and 12 )...
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6613674 |
Semiconductor processing methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitry
Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is...
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6613669 |
Semiconductor device and method for manufacturing the same
A barrier metal that can be used in a semiconductor is to be made extremely thin. Further, the manufacturing steps of a semiconductor device are shortened to reduce its manufacturing cost. An...
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