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6770492 |
Ferroelectric memory device
This invention provides a technique for preventing film quality of a capacitive insulating film made of a ferroelectric film of a FeRAM memory cell from being degraded and for improving the...
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6767750 |
Detection of AIOx ears for process control in FeRAM processing
The present invention is directed to a method of forming an FeRAM integrated circuit, which includes evaluating the capacitor stack to determine the efficacy of the sidewall diffusion barrier layer...
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6765255 |
Semiconductor device having metal-insulator-metal capacitor and fabrication method thereof
A semiconductor device having a capacitor of an MIM structure and a method of forming the same are described. The semiconductor device includes a semiconductor substrate; a first bottom...
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6764899 |
Method for fabricating semiconductor device
The present invention is related to a method for forming a hydrogen barrier layer capable of protecting a bottom structure from damages occurring due to hydrogen produced during a semiconductor...
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6764896 |
Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etching
Sputter etching of silicon oxide films is performed with an etching gas such as C 4 F 8 . Since a silicon nitride film is little etched at this time, when the etching is performed under a condition...
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6764916 |
Manufacturing method for semiconductor device
A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom...
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6764915 |
Method of forming a MIM capacitor structure
A metal-insulator metal (MIM) capacitor structure has a copper layer within a dielectric layer positioned on a substrate, an alloy layer atop the copper layer, a metal oxide layer atop the alloy...
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6762108 |
Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed
The present invention provides a method of forming a capacitor in a last metal wiring layer, and the structure so formed. The invention further provides a spacer formed around the capacitor to...
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6762110 |
Method of manufacturing semiconductor device having capacitor
A method of manufacturing a semiconductor device having a capacitor is obtained that improves adhesiveness between an interlayer dielectric film and a capacitor lower electrode without providing a...
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6762924 |
Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode having a barrier layer interposed between a conductive plug and an...
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6762445 |
DRAM memory cell with dummy lower electrode for connection between upper electrode and upper layer interconnect
In a DRAM memory cell that is a semiconductor memory device, a bit line connected to a bit line plug and local interconnect are provided on a first interlayer insulating film. A contact is not...
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6762109 |
Method of manufacturing semiconductor device with reduced number of process steps for capacitor formation
A method of manufacturing a semiconductor device and a method of forming a capacitor allow the formation of a high-performance capacitor without increasing the number of process steps. A silicide...
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6759294 |
Method of forming a capacitor in a semiconductor device
Disclosed is a method of forming a capacitor in a semiconductor device. The method comprises the steps of forming word lines on a semiconductor substrate in which semiconductor constitution...
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6759293 |
Method for manufacturing a capacitor in a semiconductor device
A method for forming a semiconductor device, which features omitting a separated procedure for forming a barrier layer by molding a bottom electrode of a capacitor with TiN compounds. The method...
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6759287 |
Semiconductor device and fabrication method thereof
A semiconductor device is provided that comprises a gate oxide film, a gate electrode, a nitride film, a low concentration impurity area, and a high concentration impurity are. The gate oxide film...
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6759252 |
Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials
A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for...
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6759304 |
DRAM memory integration method
The invention relates to a DRAM integration method that does away with the alignment margins inherent to the photoetching step of the upper electrode of the capacitance for inserting the bit line...
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6756260 |
Method for manufacturing semiconductor device using seed conductive layers
A method for manufacturing a semiconductor device, and more particularly, to method for manufacturing a semiconductor device is disclosed which comprises a capacitor having a stable platinum (Pt)...
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6756283 |
Method of fabricating a high surface area capacitor electrode
A honeycomb/webbed, high surface area capacitor formed by etching a storage poly using an etch mask having a plurality of micro vias. The etch mask is preferably formed by applying an HSG...
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6753221 |
Methods for fabricating semiconductor devices having capacitors
Methods for fabricating semiconductor devices having capacitors are provided. A plurality of storage node electrodes are formed on a semiconductor substrate. Then, a capacitor dielectric layer is...
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6753220 |
SEMICONDUCTOR PROCESSING METHODS OF FORMING DEVICES ON A SUBSTRATE, FORMING DEVICE ARRAYS ON A SUBSTRATE, FORMING CONDUCTIVE LINES ON A SUBSTRATE, AND FORMING CAPACITOR ARRAYS ON A SUBSTRATE, AND INTEGRATED CIRCUITRY
Semiconductor processing methods include forming a plurality of patterned device outlines over a semiconductor substrate, forming electrically insulative partitions or spacers on at least a portion...
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6753566 |
Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride
An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A...
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6753618 |
MIM capacitor with metal nitride electrode materials and method of formation
An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an...
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6753218 |
CERAMIC CHIP CAPACITOR OF CONVENTIONAL VOLUME AND EXTERNAL FORM HAVING INCREASED CAPACITANCE FROM USE OF CLOSELY SPACED INTERIOR CONDUCTIVE PLANES RELIABLY CONNECTING TO POSITIONALLY TOLERANT EXTERIOR PADS THROUGH MULTIPLE REDUNDANT VIAS
A capacitor including at least one interior metallization plane or plate and a multiplicity of vias for forming multiple redundant electrical connections within the capacitor. Series capacitors are...
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6750115 |
Method for generating alignment marks for manufacturing MIM capacitors
A method of manufacturing a semiconductor device, comprising depositing an insulating layer over a workpiece, and defining a pattern for at least one alignment marks, at least one MIM capacitor,...
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6750099 |
Method for fabricating capacitor of semiconductor device
A method for fabricating a capacitor of a semiconductor device is disclosed, in which it is possible to obtain reliability in an etch process, and to simplify manufacturing process steps. The...
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6750111 |
Method for fabricating a trench capacitor
A trench capacitor has an insulation collar that is formed non-conformally in the upper region of a trench in such a way that a layer thickness in an upper section of the insulation collar is...
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6750116 |
Method for fabricating asymmetric inner structure in contacts or trenches
The present invention provides a method for making an asymmetric inner structure in a contact or trench having a first sidewall, second sidewall, and a bottom in a semiconductor layer. A conformal...
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6750114 |
One-mask metal-insulator-metal capacitor and method for forming same
A capacitor structure formed on an insulation layer includes a lower electrode formed on a surface of the insulation layer, a dielectric layer formed on a surface of the lower electrode, an upper...
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6750093 |
Semiconductor integrated circuit and method for manufacturing the same
A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is...
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6750066 |
Precision high-K intergate dielectric layer
A semiconductor device which includes a precision high-K dielectric and formed on a semiconductor substrate and a method of forming the same. The semiconductor device includes at least one...
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6750113 |
Metal-insulator-metal capacitor in copper
A parallel plate capacitor in copper technology is formed in an area that has no copper below it (within 0.3 μm) with a bottom etch stop layer, a composite bottom plate having an aluminum layer...
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6747334 |
Thin-film capacitor device
A thin-film capacitor device for performing temperature compensation is manufactured by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric...
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6746916 |
Method for forming a multilayer electrode for a ferroelectric capacitor
A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access...
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6746914 |
Metal sandwich structure for MIM capacitor onto dual damascene
A first and second damascene copper interconnect plug are created over the surface of a substrate. A MIM capacitor, which is aligned with the second damascene copper interconnect plug, is created...
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6746915 |
Stack-type DRAM memory structure and its manufacturing method
The stack-type DRAM memory structure of the present invention comprises a plurality of self-aligned thin third conductive islands over shallow heavily-doped source diffusion regions without dummy...
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6743671 |
Metal-on-metal capacitor with conductive plate for preventing parasitic capacitance and method of making the same
An integrated capacitor including a semiconductor substrate is disclosed. An outer vertical plate is laid over the semiconductor substrate. The outer vertical plate of a plurality of first...
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6740901 |
Production of semiconductor integrated circuit
A semiconductor integrated circuit in which the storage capacitor has an increased capacitance and a decreased leakage current. The storage capacitor is formed by the steps of: forming a...
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6740568 |
Method to enhance epitaxial regrowth in amorphous silicon contacts
In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute...
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6740531 |
Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures
A dielectric region, such as a ferroelectric dielectric region of an integrated circuit capacitor, is protected by a multi-layer insulation structure including a first relatively thin insulation...
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6740533 |
Semiconductor device having a ferroelectric capacitor and fabrication process thereof
A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper...
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6737323 |
Method of fabricating a trench structure substantially filled with high-conductivity material
A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first...
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6737317 |
Method of manufacturing a capacitor having RuSixOy-containing adhesion layers
A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion...
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6737318 |
Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The...
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6737330 |
Isolation structure and fabricating method therefor
A semiconductor device isolation structure and a fabricating method therefor are disclosed. The isolation structure includes a trench which is formed on an isolating region to define an active...
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6734079 |
Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a...
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6734100 |
Method of forming ruthenium thin film using plasma enhanced process
A conventional method of forming a ruthenium thin film has a problem that conditions for improving a surface morphology are contrary to those for improving a step coverage, with respect to an...
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6734061 |
Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor
The present invention provides a semiconductor memory device and a fabrication method capable of preventing the contact between a dielectric layer of a capacitor and a diffusion barrier. The plug...
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6734062 |
Methods of forming DRAM cells
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor...
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6730573 |
MIM and metal resistor formation at CU beol using only one extra mask
An improved process for fabricating simultaneously high capacitance, less than 0.13 micron metal-insulator-metal capacitors, metal resistors and metal interconnects, has been developed using single...
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