Matches 451 - 500 out of 1916 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >
Match Document Document Title
6881642 Method of forming a MIM capacitor with metal nitride electrode  
A method of forming an MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower...
6881643 Semiconductor device producing method and semiconductor device  
In a semiconductor device producing method, a plug is formed within a contact hole formed in a barrier film and an interlayer insulating film on a semiconductor substrate. Then, an insulation film...
6881622 Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structure  
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor...
6878586 Semiconductor memory device  
A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines...
6878604 Semiconductor element comprising a sequence of layers for converting acoustic or thermal signal and electrical voltage changes into each other and method for producing the same  
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production....
6878585 Methods of forming capacitors  
A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor...
6875667 Method for forming capacitor  
A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, and further, permits...
6875655 Method of forming DRAM capacitors with protected outside crown surface for more robust structures  
A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful...
6876059 Semiconductor integrated circuit device and method of manufacturing the same  
A semiconductor integrated circuit device according to an embodiment of the present invention has an MIM structure capacitor connected between a power source potential electrode wiring and a ground...
6872620 Trench capacitors with reduced polysilicon stress  
A Deep Trench (DT) capacitor in a semiconductor substrate has an isolation collar formed on trench sidewalls above the DT bottom. An outer plate is formed below the collar. Capacitor dielectric is...
6870654 Structure of a structure release and a method for manufacturing the same  
A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference...
6867094 Method of fabricating a stacked capacitor for a semiconductor device  
The disclosure describes a stacked capacitor and a method of forming the same. The method prevents a storage node of the stacked capacitor from crumbling due to lack of support, thereby improving...
6867131 Apparatus and method of increasing sram cell capacitance with metal fill  
A static random access memory cell with metal fill to form capacitors for increasing the capacitance of the memory cell. More specifically, a semiconductor device including a structure having an...
6867095 Method for the fabrication of a semiconductor device utilizing simultaneous formation of contact plugs  
A method for fabricating a semiconductor device comprising: providing a semiconductor substrate on which a transistor made of a gate electrode, a source/drain is formed; forming a first insulating...
6864146 Metal oxide integrated circuit on silicon germanium substrate  
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes...
6864138 Methods of forming capacitor structures and DRAM arrays  
The invention encompasses DRAM constructions, capacitor constructions, integrated circuitry, and methods of forming DRAM constructions, integrated circuitry and capacitor constructions. The...
6864137 MIM capacitor with diffusion barrier  
A process of manufacturing a semiconductor device. The initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first...
6861310 Capacitor having a tantalum lower electrode and method of forming the same  
A capacitor has a titanium nitride layer deposited on a silicon substrate for stress reduction and adherence promotion, and a layer of tantalum is deposited thereon. The tantalum layer is oxidized...
6858490 Method for manufacturing merged DRAM with logic device  
In manufacturing merged DRAM with a logic device in a single chip, an oxide layer and a nitride layer are formed on a semiconductor substrate. A hole for exposing the substrate is formed. A silicon...
6858535 Methods for patterning metal layers for use with forming semiconductor devices  
The present invention provides a method for forming a discontinuous conductive layer in the fabrication of integrated circuits. The method includes providing a substrate assembly having a surface...
6855594 Methods of forming capacitors  
A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation...
6855597 DRAM cell  
A method of manufacturing a DRAM cell includes forming an isolation layer on a given region of a substrate to define an active region having a plurality of line shaped sub-regions; forming at least...
6856501 Capacitor having copper electrodes and diffusion barrier layers  
A capacitor has a couple of electrodes with a dielectric placed therebetween. At least one of the electrodes is made of copper, and barriers for preventing the diffusion of copper into the...
6852628 Method of insulating interconnects, and memory cell array with insulated interconnects  
The process is used to electrically insulate adjacent metallic interconnects made from an aluminum-containing alloy, in particular for interconnects which are arranged on a DRAM cell array. A...
6852551 Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film  
A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and...
6852136 Method for manufacturing tantalum oxy nitride capacitors  
A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a...
6852549 Ferroelectric thin film processing for ferroelectric field-effect transistor  
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a...
6849517 Methods of forming capacitors including reducing exposed electrodes in semiconductor devices  
A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating...
6849467 MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer  
A method of forming an H 2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiO x thin film, where 0<x<2, on a damascene structure; plasma space...
6849495 Selective silicidation scheme for memory devices  
A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top...
6847073 Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same  
A semiconductor device includes a MOS transistor, an interlayer insulating film, a contact plug, a capacitor lower electrode, a ferroelectric film and two capacitor upper electrodes. The MOS...
6845004 Protecting resin-encapsulated components  
A method of protecting surface mount capacitors from moisture and oxygen corrosion by applying a thermally curable pre-coat resin to a portion of the terminals of a capacitor and encapsulating the...
6844230 Methods of forming capacitors and resultant capacitor structures  
Methods of forming capacitors and resultant capacitor structures are described. In one embodiment, a capacitor storage node layer is formed over a substrate and has an uppermost rim defining an...
6844268 Method for fabricating a semiconductor storage device having an increased dielectric film area  
A semiconductor device of the present invention is a semiconductor memory having a charge storage film. Recesses or holes which effectively increase the capacitance of a floating gate or a memory...
6841442 Method for forming metal contact of semiconductor device  
Disclosed is a method for forming a metal contact of a semiconductor device. The method includes the steps of preparing a substrate formed with a tungsten bit line, forming an insulating interlayer...
6841396 VIA0 etch process for FRAM integration  
A ferroelectric memory device comprises a logic programmable capacitance reference circuit. The circuit is adapted to generate a reference voltage during a sense mode of operation, wherein the...
6838332 Method for forming a semiconductor device having electrical contact from opposite sides  
A semiconductor ( 10 ) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor ( 75, 77, 79 ), that are connected by a via or conductive region (...
6838353 Devices having improved capacitance and methods of their fabrication  
A capacitor formed by a person using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates...
6838337 Sense amplifier and architecture for open digit arrays  
A method and apparatus are described which provide a memory device with sense amplifiers extending in a first direction and corresponding digit lines extending in a second direction perpendicular...
6838340 Method of manufacturing semiconductor device having MIM capacitor element  
A method of manufacturing a semiconductor device includes forming a first interlayer insulation film on a semiconductor substrate, depositing a first metal film on the first interlayer insulation...
6838352 Damascene trench capacitor for mixed-signal/RF IC applications  
A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a...
6831321 Semiconductor device with a capacitor electrode isolation film formed from the same layer as a capacitor electrode  
A semiconductor device that can prevent short-circuit occurring between capacitor electrodes and a method of manufacturing the semiconductor device are obtained. A semiconductor includes two...
6830984 Thick traces from multiple damascene layers  
Multiple damascene layers in integrated circuits can form several advantageous designs or components that may lower cost or increase performance of certain designs. In embodiments for power bus...
6830971 High K artificial lattices for capacitor applications to use in CU or AL BEOL  
A process of fabricating high dielectric constant MIM capacitors. The high dielectric constant MIM capacitors are for both RF and analog circuit applications. For the high dielectric constant MIM...
6825091 Semiconductor memory device and method of manufacturing same  
A semiconductor memory device and a method of manufacturing same, wherein landing pads are formed to contact source/drain regions of an access transistor in a memory cell array area and a first...
6825095 Methods of forming capacitors  
The invention includes a number of methods and structures pertaining to semiconductor circuit technology, including: methods of forming DRAM memory cell constructions; methods of forming capacitor...
6821840 Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area  
A semiconductor device comprises a field effect transistor and a passive capacitor, wherein the dielectric layer of the capacitor is comprised of a high-k material, whereas the gate insulation...
6821845 Semiconductor device and method for manufacturing the same  
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a...
6821862 METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A METAL OXIDE LAYER DISPOSED ON ANOTHER LAYER TO PROTECT THE OTHER LAYER FROM DIFFUSION OF IMPURITIES AND INTEGRATED CIRCUIT DEVICES MANUFACTURED USING SAME  
Integrated circuit devices are manufactured by exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a metal oxide...
6821861 Method for fabricating an electrode arrangement for charge storage  
The invention relates to an electrode arrangement for charge storage with an external trench electrode ( 202; 406 ), embodied along the wall of a trench provided in a substrate ( 401 ) and...
Matches 451 - 500 out of 1916 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >