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8183074 |
Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly
A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second...
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8168459 |
Method for manufacturing semiconductor light-emitting device
A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a...
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8164108 |
Light emitting diode chip and manufacturing method thereof
A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a...
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8163581 |
Semiconductor and optoelectronic devices
Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.
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8164105 |
Light emitting device and method for fabricating the same
Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive...
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8159000 |
LED package having an array of light emitting cells coupled in series
Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body....
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8153455 |
Method for enhancing light extraction efficiency of light emitting diodes
A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a...
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8154035 |
Nitride semiconductor light emitting element
In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On...
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8148737 |
Light emitting device, light emitting device package and lighting system
Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first...
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8138002 |
Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
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8137995 |
Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive...
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8137998 |
Method for fabricating light-emitting devices with vertical light-extraction mechanism
A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices,...
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8130804 |
Laser diode and method of manufacturing the same
A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability...
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8129494 |
Resin composition for printing plate
Disclosed is a polymer having excellent solvent resistance which can be produced by using a polycarbonate diol having a repeating unit represented by the formula (1) and/or (2), having a hydroxyl...
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8124433 |
Low optical loss electrode structures for LEDs
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
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8115226 |
Low optical loss electrode structures for LEDs
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the...
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8115224 |
Light emitting device
A light emitting device That includes a first photonic crystal structure having a reflective layer and non-metal pattern elements on the reflective layer, a second conductive semiconductor layer on...
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8114691 |
Semiconductor light emitting device having textured structure and method of manufacturing the same
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer...
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8114690 |
Methods of low loss electrode structures for LEDs
Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the...
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8105921 |
Gallium nitride materials and methods
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials...
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8105852 |
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A...
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8093081 |
Device of light-emitting diode and method for fabricating the same
A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a...
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8090229 |
Method and device for providing electronic circuitry on a backplate
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
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8053262 |
Method for manufacturing nitride semiconductor laser element
A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on...
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8044381 |
Light emitting diode (LED)
A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum...
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8039282 |
Semiconductor optical device and method of fabricating the same
In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate...
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8034648 |
Epitaxial regrowth in a distributed feedback laser
Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base...
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8026156 |
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of...
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8012779 |
Gallium nitride-based light emitting diode and method of manufacturing the same
A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first...
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8008101 |
GaN compound semiconductor light emitting element and method of manufacturing the same
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN...
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8008685 |
Light emitting device, method of manufacturing light emitting device, light emitting device package, and lighting system
Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light...
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7998770 |
Method for forming a semiconductor light-emitting device
A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The...
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7998761 |
Light emitting diode with ITO layer and method for fabricating the same
The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of...
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7999340 |
Apparatus and method for forming optical black pixels with uniformly low dark current
An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach...
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7998771 |
Manufacturing method of light emitting diode including current spreading layer
Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction...
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7977134 |
Nitride-based semiconductor light emitting diode and method of manufacturing the same
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially...
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7964424 |
Method for manufacturing nitride semiconductor light-emitting element
A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active...
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7964423 |
Semiconductor device and method for manufacturing the same
The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the...
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7960198 |
Method of making a semiconductor device with surge current protection
A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through...
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7947520 |
Semiconductor laser and method of making the same
In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is...
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7943406 |
LED fabrication via ion implant isolation
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type...
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7943407 |
Method for manufacturing semiconductor laser
A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group...
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7939448 |
Semiconductor device having electrode and manufacturing method thereof
A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate...
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7936019 |
Nano and MEMS power sources and methods thereof
A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is...
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7935553 |
Method for fabricating high density pillar structures by double patterning using positive photoresist
A method of making a semiconductor device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer into a first photoresist pattern, wherein the...
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7915622 |
Textured light emitting diodes
A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer (2) comprising a doped III-V or II-VI group compound semiconductor or alloys of...
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7910407 |
Quad memory cell and method of making same
A non-volatile memory device includes a first electrode, a diode steering element, at least three resistivity switching storage elements, and a second electrode. The diode steering element...
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7902071 |
Method for forming active and gate runner trenches
A method for forming a trench-gated field effect transistor (FET) includes the following steps. Using a first mask, defining and simultaneously forming a plurality of active gate trenches and at...
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7897422 |
Semiconductor light-emitting device and a method to produce the same
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from...
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7892860 |
Semiconductor laser chip and method of formation thereof
A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal...
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