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7615443 |
Method of forming finFET device
The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess....
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7611958 |
Method of making a semiconductor element
A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7601604 |
Method for fabricating conducting plates for a high-Q MIM capacitor
A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench...
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7598138 |
Semiconductor device manufacturing method
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon...
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7594937 |
Porous anode body for solid electrolytic capacitor, production method thereof and solid electrolytic capacitor
The invention provides a method of manufacturing a porous anode for a solid electrolytic capacitor, comprising a step of subjecting a molded body containing powder of at least one material selected...
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7592272 |
Manufacturing method of semiconductor integrated circuit
An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an...
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7592233 |
Method for forming a memory device with a recessed gate
A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two...
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7592218 |
Methods of forming vertical transistors
A vertical transistor forming method includes forming a first pillar above a first source/drain and between second and third pillars, providing a first recess between the first and second pillars...
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7592216 |
Fabrication process of a semiconductor device having a capacitor
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall...
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7585741 |
Methods of forming capacitors
The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive...
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7585723 |
Method for fabricating capacitor
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
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7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
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7582519 |
Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending...
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7575971 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7569451 |
Method of fabricating an isolation shallow trench
A method of fabricating an isolation shallow trench contains providing a substrate with at least a deep trench, forming a cap layer on the upper portion of the deep trench, forming a crust layer on...
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7566628 |
Process for making a resistive memory cell with separately patterned electrodes
Methods of making MIM structures and the resultant MIM structures are provided. The method involves forming a top electrode layer over a bottom electrode and an insulator on a substrate and forming...
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7566614 |
Capacitor of semiconductor device and method of fabricating the same
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom...
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7563686 |
Method for forming a memory device with a recessed gate
A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two...
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7563671 |
Method for forming trench capacitor and memory cell
A method for forming a trench capacitor and memory cell by providing a substrate on which a grid STI and a plurality of active regions covered by a hard mask layer are formed. A photoresist is...
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7563669 |
Integrated circuit with a trench capacitor structure and method of manufacture
An integrated circuit device having a capacitor structure. In one form of the invention, an integrated circuit device includes a capacitor structure formed along a surface of a semiconductor layer....
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7560356 |
Fabrication method of trench capacitor
A method of fabricating trench capacitors is provided. A plurality of trenches is formed in the substrate by performing a patterning process with a patterned mask layer on a substrate. A bottom...
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7553737 |
Method for fabricating recessed-gate MOS transistor device
A method of fabricating gate trench utilizing pad pullback technology is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad layer is provided. Trench capacitors are...
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7553736 |
Increasing dielectric constant in local regions for the formation of capacitors
A method for increasing capacitances of capacitors and the resulting integrated structure are provided. The method includes providing a substrate, forming a low-k dielectric layer over the...
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7550345 |
Methods of forming hafnium-containing materials
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are...
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7547937 |
Semiconductor memory device and method for manufacturing the same
A semiconductor memory device includes a first word-line, a first non-inverted bit-line, a first inverted bit-line, a first global interconnection layer, a first memory capacitor having a first...
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7547607 |
Methods of fabricating integrated circuit capacitors using a dry etching process
A method of fabricating an integrated circuit capacitor includes forming a first metal layer on a conductive plug in an interlayer insulating layer on a substrate. At least a portion of the first...
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7534692 |
Process for producing an integrated circuit comprising a capacitor
An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The integrated circuit includes at least one...
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7528035 |
Vertical trench memory cell with insulating ring
A method of forming a vertical transistor trench memory cell having an insulating ring is provided. The method includes forming a semiconductor material region in an etched portion of a...
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7510930 |
Method for fabricating recessed gate MOS transistor device
A method of fabricating self-aligned gate trench utilizing trench top oxide (TTO) poly spacer is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad nitride layer is...
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7494891 |
Trench capacitor with void-free conductor fill
A method forms a node dielectric in a bottle shaped trench and then deposits an initial conductor within the lower portion of the bottle shaped trench, such that a void is formed within the initial...
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7494890 |
Trench capacitor and method for manufacturing the same
A structure of a trench capacitor and method for manufacturing the same. The method includes providing a substrate having a defined memory area and logic area, and performing an STI process to form...
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7488664 |
Capacitor structure for two-transistor DRAM memory cell and method of forming same
A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a...
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7488642 |
Process for forming a buried plate
A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is a single-crystal semiconductor region of a substrate is etched to form a...
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7485909 |
Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor substrate formed with a trench having a sidewall including a middle point. The trench includes a first part extending from a surface of the...
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7482240 |
Method for manufacturing semiconductor device
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, an USG (undoped silicate glass) layer is utilized during a process of forming a capacitor...
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7482239 |
Methods of forming integrated circuitry
In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the...
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7482220 |
Semiconductor device having deep trench charge compensation regions and method
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the...
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7470585 |
Integrated circuit and fabrication process
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device...
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7468306 |
Method of manufacturing a semiconductor device
A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on...
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7465640 |
Dynamic random access memory cell and method for fabricating the same
A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench;...
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7456067 |
Method with high gapfill capability for semiconductor devices
A method of performing an STI gapfill process for semiconductor devices is provided. In a specific embodiment of the invention, the method includes forming an stop layer overlying a substrate. In...
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7452782 |
Image TFT array of a direct X-ray image sensor and method of fabricating the same
A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a...
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7449382 |
Memory device and fabrication method thereof
A memory device is disclosed. A substrate is provided. A plurality of pillars is disposed on the substrate. Each pillar has a plurality of epitaxial layers, has a first sidewall and a second...
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7445988 |
Trench memory
A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially...
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7445987 |
Offset vertical device
The present invention includes a method for forming a memory array and the memory array produced therefrom. Specifically, the memory array includes at least one first-type memory device, each of...
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7439149 |
Structure and method for forming SOI trench memory with single-sided strap
A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a...
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7439128 |
Method of creating deep trench capacitor using a P+ metal electrode
The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a...
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7439126 |
Method for manufacturing semiconductor memory
A method for manufacturing a semiconductor memory having a memory cell selection transistor and a capacitor, comprises a step of forming a polysilicon plug having a large-diameter portion on a side...
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