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Match Document Document Title
8178405 Resistor random access memory cell device  
A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the...
8168496 Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method  
A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral dif...
8169074 Semiconductor devices including first and second silicon interconnection regions  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first interconnection disposed on a substrate. The interconnection includes a first...
8168507 Structure and method of forming enhanced array device isolation for implanted plate EDRAM  
A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first...
8159015 Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates  
A device is provided that includes memory, logic and capacitor structures on a semiconductor-on-insulator (SOI) substrate. In one embodiment, the device includes a semiconductor-on-insulator (SOI)...
8158502 Method of manufacturing a semiconductor device including a silicon pillar  
A method of manufacturing a semiconductor device includes forming silicon pillar 11 on substrate 10, forming a protective film which covers an upper end portion and a lower end portion of a side...
8159050 Single crystal silicon structures  
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic...
8158485 Integrated circuit device having openings in a layered structure  
An integrated circuit device includes a substrate with a first layer situated on the substrate. The first layer defines a first opening with a cover layer deposited on the first layer and coating a...
8154064 Semiconductor constructions  
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
8143135 Embedded series deep trench capacitors and methods of manufacture  
Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the...
8143659 Vertical trench capacitor, chip comprising the capacitor, and method for producing the capacitor  
A capacitor is described which includes a substrate with a doped area of the substrate forming a first electrode of the capacitor. A plurality of trenches is arranged in the doped area of the...
8133779 Method of fabricating a semiconductor device  
A conductive film is formed to extend from a bottom and a sidewall of a recess formed in an interlayer insulating film onto a top surface of the interlayer insulating film. Dry etching of the...
8129200 Nonvolatile ferroelectric memory device and method for manufacturing the same  
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a...
8125050 Semiconductor device having a mim capacitor and method of manufacturing the same  
A semiconductor device is described includes a wiring layer, an insulating layer stacked on the wiring layer, a trench formed by digging down the insulating layer from the surface thereof, a...
8114733 Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the same  
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support...
8110464 SOI protection for buried plate implant and DT bottle ETCH  
An SOI layer has an initial trench extending therethrough, prior to deep trench etch. An oxidation step, such as thermal oxidation is performed to form a band of oxide on an inner periphery of the...
8110475 Method for forming a memory device with C-shaped deep trench capacitors  
The invention is related to a memory device, including a substrate, a capacitor which is substantially C-shaped in a cross section parallel to the substrate surface and a word line coupling the...
8110862 Semiconductor structure including trench capacitor and trench resistor  
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor...
8110474 Method of making micromodules including integrated thin film inductors  
Micromodules and methods of making them are disclosed. An exemplary micromodule includes a substrate having a thin film inductor, and a bumped die mounted on the substrate and over the thin film...
8110476 Memory cell that includes a carbon-based memory element and methods of forming the same  
In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled...
8105913 Method of fabricating a capacitor of a semiconductor device  
Disclosed herein is a method of fabricating a capacitor of a semiconductor device that includes sequentially forming an interlayer insulating film defining a contact plug, a lower electrode oxide...
8101494 Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors  
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and...
8097521 Electronic device comprising an integrated circuit and a capacitance element  
An electronic device (ICD) comprises an integrated circuit (AIC) and a capacitance element (PIC). The integrated circuit (AIC) is provided with a plurality of circuit contact pairs (CI). The...
8088676 Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom  
Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC),...
8088667 Method of fabricating vertical capacitors in through-substrate vias  
A fabrication method which forms vertical capacitors in a substrate. The method is preferably an all-dry process, comprising forming a through-substrate via hole in the substrate, depositing a...
8072024 Nonvolatile semiconductor memory device and method for manufacturing same  
A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the...
8071439 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating...
8058952 MEMS resonator, a method of manufacturing thereof, and a MEMS oscillator  
The invention relates to a MEMS resonator comprising a first electrode, a movable element (48) comprising a second electrode, the movable element (48) at least being movable towards the first...
8043925 Method of forming capacitor of semiconductor memory device  
A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first...
8034681 Method of forming flash memory device having inter-gate plug  
A method of forming a non-volatile memory device includes the following steps. First and second cell gates are formed in a cell region. First and second peripheral gates are formed in a...
8026147 Method of fabricating a semiconductor microstructure  
Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of...
8021945 Bottle-shaped trench capacitor with enhanced capacitance  
In accordance with an aspect of the invention, a method is provided for fabricating a semiconductor chip including a trench capacitor. In such method, a monocrystalline semiconductor region can be...
8021941 Bias-controlled deep trench substrate noise isolation integrated circuit device structures  
A novel and useful apparatus for and method of providing noise isolation between integrated circuit devices on a semiconductor chip. The invention addresses the problem of noise generated by...
8017985 Concentric or nested container capacitor structure for integrated circuits  
Disclosed are embodiments for a container capacitor structure in which at least two container capacitors, e.g., an inner and outer container capacitor, are made concentric and nested with respect...
8017491 Method for fabricating capacitor  
A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper...
8008159 Semiconductor device and semiconductor device manufacturing method  
A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the...
8008748 Deep trench varactors  
A deep trench varactor structure compatible with a deep trench capacitor structure and methods of manufacturing the same are provided. A buried plate layer is formed on a second deep trench, while...
7998808 Semiconductor device fabrication using spacers  
A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at...
7994002 Method and apparatus for trench and via profile modification  
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods...
7982558 Integrated single-crystal MEMS device  
Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density...
7981756 Common plate capacitor array connections, and processes of making same  
A process of forming a semiconductive capacitor device for a memory circuit includes forming a first capacitor cell recess and a second capacitor cell recess that are spaced apart by a capacitor...
7982284 Semiconductor component including an isolation structure and a contact to the substrate  
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the...
7977172 Dynamic random access memory (DRAM) cells and methods for fabricating the same  
A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench....
7973388 Semiconductor structures including square cuts in single crystal silicon  
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which...
7960241 Manufacturing method for double-side capacitor of stack DRAM  
A manufacturing method for double-side capacitor of stack DRAM has steps of: forming a sacrificial structure in the isolating trench and the capacitor trenches; forming a first covering layer and a...
7955945 Weak-link capacitor  
A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene) polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene...
7943473 Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme  
Passive, high density, 3d IC capacitor stacks and methods that provide the integration of capacitors and integrated circuits in a wafer to wafer bonding process that provides for the integration of...
7943477 Method of patterning noble metals for semiconductor devices by electropolishing  
An electropolishing process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns is disclosed.
7943474 EDRAM including metal plates  
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a...
7939390 Gap capacitors for monitoring stress in solder balls in flip chip technology  
A semiconductor structure formation method and operation method. The structure includes (i) a dielectric layer, (ii) a bottom capacitor plate and an electrically conductive line on the dielectric...
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