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7642170 |
Phase change memory cell with roundless micro-trenches
A method for constructing a phase change memory device includes forming a first dielectric layer on a substrate; forming a first conductive component in the first dielectric layer; forming a second...
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7638361 |
Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines
A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a...
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7615459 |
Manufacturing method for variable resistive element
A manufacturing method for a variable resistive element according to which a stable switching operation can be achieved with excellent reproducibility is provided. A conductive thin film is...
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7592216 |
Fabrication process of a semiconductor device having a capacitor
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall...
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7569459 |
Nonvolatile programmable resistor memory cell
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second...
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7525832 |
Memory device and semiconductor integrated circuit
First electrode layer includes a plurality of first electrode lines (W 1 , W 2 ) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of...
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7514334 |
Thin film plate phase change RAM circuit and manufacturing method
A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the...
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7498231 |
Multiple data state memory cell
A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a...
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7485559 |
Semiconductor device and method of fabricating the same
A semiconductor device and methods thereof. The semiconductor device includes a first layer formed on a substrate, the first layer having a higher conductivity. The semiconductor device further...
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7473612 |
Method for fabricating a variable-resistance element including heating a RMCoO3 perovskite structure in an oxygen atmosphere
A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second...
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7456076 |
Techniques for forming passive devices during semiconductor back-end processing
Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically...
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7439147 |
Resistor of semiconductor device and method for fabricating the same
A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first...
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7427551 |
High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature
A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at...
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7419881 |
Phase changeable memory device and method of formation thereof
In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating...
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7393701 |
Method of adjusting buried resistor resistance
Methods of adjusting a resistance of a buried resistor in a semiconductor are disclosed. In one aspect, the method includes using a silicidation blocking mask to define the buried resistor in the...
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7387938 |
Methods of forming phase change storage cells for memory devices
Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern...
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7375001 |
Semiconductor device and method therefore
Where the silicon active layer of an SOI substrate is used as a resistor, it is difficult to form small wells densely in a semiconductor support substrate portion under the resistor because of the...
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7351639 |
Increasing an electrical resistance of a resistor by oxidation or nitridization
A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with...
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7326979 |
Resistive memory device with a treated interface
A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments...
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7314786 |
Metal resistor, resistor material and method
A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu)...
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7305754 |
Method of manufacturing chip resistor
In manufacturing a chip resistor by dividing a chip resistance substrate which includes an insulator, resistance film formed on a surface of the insulator, and a plurality of conductive strips...
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7253074 |
Temperature-compensated resistor and fabrication method therefor
A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the...
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7217613 |
Low cost fabrication of high resistivity resistors
In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon...
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7179702 |
Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same
A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated...
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7160478 |
Method for producing electronic componets
A method for producing an electronic component is provided. The method includes providing at least one die on a wafer, the at least one die having at least one sensor-technologically active and/or...
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7151037 |
Processes of forming stacked resistor constructions
The invention includes semiconductor constructions having a thin film stacked resistor in electrical connection with a source/drain region of a transistor device. The resistor includes first and...
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7135367 |
Manufacturing method of semiconductor device
A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method,...
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7122396 |
Semiconductor acceleration sensor and process for manufacturing the same
The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal...
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7122436 |
Techniques for forming passive devices during semiconductor back-end processing
Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically...
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7098101 |
Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor deposition
A method of forming Pr X Ca 1-x MnO 3 thin films having a PMO/CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and...
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7078306 |
Method for forming a thin film resistor structure
The present invention relates to a method for forming a thin film resistor and a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is...
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7074623 |
Methods of forming strained-semiconductor-on-insulator finFET device structures
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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7071008 |
Multi-resistive state material that uses dopants
A multi-resistive state material that uses dopants is provided. A multi-resistive state material can be used in a memory cell to store information. However, a multi-resistive state material may not...
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7071070 |
Method of fabricating capacitor
A method of fabricating a capacitor is described. A dielectric layer is formed over a substrate. An upper electrode having multiple openings therein is formed over the dielectric layer. Then, a...
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7060586 |
PCMO thin film with resistance random access memory (RRAM) characteristics
PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr 3+ 1−x Ca 2+...
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7029982 |
Method of affecting RRAM characteristics by doping PCMO thin films
A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution...
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6936520 |
Method for fabricating semiconductor device having gate electrode together with resistance element
A method for fabricating a semiconductor device comprises the steps of forming a polysilicon film 32 on a silicon substrate 10 , implanting a dopant into a region of the polysilicon film 32 ...
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6908777 |
Compound semiconductor device and method for controlling characteristics of the same
A method of controlling characteristics of a compound semiconductor device, whereby the compound semiconductor device is formed so as to include a plurality of resistors having the same ratio of a...
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6905937 |
Methods of fabricating a cross-point resistor memory array
Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between...
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6858489 |
Semiconductor device manufacturing method
This invention is directed to the reduction of voltage dependence and thus allows easy design of integrated semiconductor circuits. The device is equipped with a P− type resistance layer, in...
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6844228 |
Manufacturing method of a semiconductor device capable of accurately setting a resistance value of a resistance element
A photoresist ( 6 ) is formed on an element isolation insulating film ( 2 ) so as to cover the upper and side surfaces of a polysilicon film ( 4 R) which functions as a resistance element. With the...
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6812108 |
BICMOS process with low temperature coefficient resistor (TCRL)
A low temperature coefficient resistor(TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature...
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6794226 |
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
A semiconductor structure that includes at least one circuit element of a fuse, a diffusion barrier or a capacitor that is formed by refractory metal-silicon-nitrogen is disclosed. A method for...
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6764910 |
Structure of semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and...
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6750091 |
Diode formation method
A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon...
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6737327 |
Method for forming an interated resister having aligned body and contact
A method for forming a resistor includes causing a semiconductor layer to have a first resistance, forming a first mask on the semiconductor layer, causing portions of the semiconductor layer left...
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6734075 |
CMOS device having high-density resistance elements
A CMOS device includes a reverse electric conduction type well ( 2 ) formed on a monoelectric conduction type semiconductor substrate ( 1 ), a first MOS transistor ( 3 ) of a reverse electric...
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6713362 |
Method for forming a resistor to replace a N-well resistor
The present invention relates to a method for forming a non-salicide p + polysilicon resistor used to replace a N-well resistor. In the low power SRAM process whose window is lower than 0.15 μm,...
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6709943 |
Method of forming semiconductor diffused resistors with optimized temperature dependence
Ion implanted resistors formed in the body of a crystalline silicon substrate. The resistors have a different conductivity type from that of the silicon substrate. The sheet resistance and...
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6664166 |
Control of nichorme resistor temperature coefficient using RF plasma sputter etch
A method for processing a partially fabricated semiconductor wafer having a layer of nichrome resistor material patterned to form a plurality of nichrome resistors on a surface of the wafer...
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