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9041151 Fin eFuse formed by trench silicide process  
A semiconductor structure and method of manufacturing the same are provided. The semiconductor device includes an enhanced performance electrical fuse formed in a polysilicon fin using a trench...
9041157 Method for doping an electrically actuated device  
An electrically actuated device comprises an active region disposed between a first electrode and a second electrode, a substantially nonrandom distribution of dopant initiators at an interface...
9040948 Nanoscale switching device  
A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the...
9040381 Packages with passive devices and methods of forming the same  
A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the...
9034718 Film forming method for forming boron-added silicon nitride film  
Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a...
9034670 Solar cell and method for manufacturing such a solar cell  
A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back...
9034719 Methods of forming variable resistive memory devices  
A method of forming a variable resistive memory device includes forming a conductive pattern that alternates with a first insulation pattern along a first direction on a substrate that is parallel...
9029230 Conductive line routing for multi-patterning technology  
A method comprises: forming a plurality of reference voltage patterns in a first layer of a semiconductor substrate using a first mask, the reference voltage patterns including alternating first...
9023710 Semiconductor memory device and manufacturing method thereof  
A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The...
9018060 Variable capacitance sensors and methods of making the same  
A variable capacitance sensor includes a first conductive electrode comprising electrically interconnected first conductive sheets; a second conductive electrode comprising electrically...
9018682 Semiconductor memory device  
According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers stacked alternately with a plurality of insulating layers on the...
9012307 Two terminal resistive switching device structure and method of fabricating  
A method of forming a two terminal device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first...
9012292 Semiconductor memory device and method of fabricating the same  
A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the...
9006073 Fabrication method of phase change memory device having self-aligned bottom electrode  
A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor...
9006016 Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization  
The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate...
9006074 High voltage hybrid polymeric-ceramic dielectric capacitor  
An integrated circuit includes isolation capacitors which include a silicon dioxide dielectric layer and a polymer dielectric layer over the layer of silicon dioxide. The silicon dioxide...
9000563 Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device  
A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a...
8999807 Method for manufacturing a semiconductor component that includes a common mode choke and structure  
A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage...
8994023 Thin film transistor array substrate and method of fabricating the same  
A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin...
8993403 Socket, and capacitor element producing jig using socket  
The present invention provides a socket by which a capacitor element can be produced without causing contamination of chemical conversion treatment liquid or semiconductor layer forming liquid...
8987861 Semiconductor device and method of manufacturing the same  
Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first...
8987107 Production of high-performance passive devices using existing operations of a semiconductor process  
In one general aspect, a semiconductor processing method can include forming an N-type silicon region disposed within a P-type silicon substrate. The method can also include forming a field oxide...
8981328 Back to back resistive random access memory cells  
A resistive random access memory cell formed in an integrated circuit includes first and second resistive random access memory devices, each including an anode and a cathode. The anode of the...
8980720 eFUSE and method of fabrication  
An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a...
8975134 Fullerene-based capacitor electrode  
A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped...
8975099 ESD protection device and method for manufacturing the same  
An ESD protection device is manufactured such that its ESD characteristics are easily adjusted and stabilized. The ESD protection device includes an insulating substrate, a cavity provided in the...
8975148 Memory arrays and methods of forming memory cells  
Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first...
8975147 Enhanced work function layer supporting growth of rutile phase titanium oxide  
This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for...
8970516 Integrated passives and power amplifier  
This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting...
8969167 Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer  
A method of fabricating a semiconductor device with capacitors may include forming a mold structure on a lower structure, patterning the mold structure to form a plurality of holes exposing the...
8962437 Method for fabricating capacitor with high aspect ratio  
A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon...
8962347 Semiconductor device and method of manufacturing the same  
A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode....
8962387 Methods of forming memory cells  
Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the...
8952490 Redox capacitor and manufacturing method thereof  
To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As...
8951880 Dielectrics containing at least one of a refractory metal or a non-refractory metal  
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of...
8946044 Semiconductor device and method of manufacturing semiconductor device  
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower...
8946019 Semiconductor device comprising a buried capacitor formed in the contact level  
In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced...
8946855 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode...
8946043 Methods of forming capacitors  
A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is...
8940611 Semiconductor integrated circuit device and method of fabricating the same  
A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination...
8941213 Semiconductor device  
A semiconductor device includes: a spiral-shaped inductor formed to include a metal wire; and a horseshoe-shaped inductor formed to include the metal wire. The horseshoe-shaped inductor is...
8940612 Poly resistor for metal gate integrated circuits  
An integrated circuit containing a metal gate transistor and a thin polysilicon resistor may be formed by forming a first layer of polysilicon and removed it in an area for the thin polysilicon...
8941090 Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same  
A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The...
8940610 Electrode for energy storage device and method for manufacturing the same  
An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large...
8940388 Insulative elements  
Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second...
8927384 Methods of fabricating a semiconductor memory device  
A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer...
8928114 Through-assembly via modules and methods for forming the same  
A discrete Through-Assembly Via (TAV) module includes a substrate, and vias extending from a surface of the substrate into the substrate. The TAV module is free from conductive features in contact...
8921198 Method and structure for forming a deep trench capacitor  
A method of forming a deep trench capacitor includes providing a wafer. Devices are formed on a front side of the wafer. A through-silicon-via is formed on a substrate of the wafer. Deep trenches...
8923666 Electrically controlled optical fuse and method of fabrication  
Embodiments of the present invention provide an electrically controlled optical fuse. The optical fuse is activated electronically instead of by the light source itself. An applied voltage causes...
8921200 Nonvolatile storage element and method of manufacturing thereof  
A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance...