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7621970 |
Manufacturing method of electrolytic capacitor
An capacitor element is fabricated by winding an anode foil having a dielectric oxide film formed thereon, and a cathode foil subjected to a treatment of enlarging surface area in a manner that a...
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7618874 |
Methods of forming capacitors
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being...
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7615407 |
Methods and systems for packaging integrated circuits with integrated passive components
A method is described for packaging integrated circuit dice such that each package includes a die with an integrated passive component mounted to the active surface of the die.
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7615428 |
Vertical memory device and method
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second...
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7608502 |
Method for manufacturing semiconductor device
In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material...
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7605048 |
Method for forming a capacitor having a copper electrode and a high surface area aluminum inner layer
High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum...
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7601579 |
Method of manufacturing semiconductor integrated circuit
A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type...
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7598180 |
Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby
A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to...
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7588991 |
Method for fabricating embedded static random access memory
The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the...
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7579643 |
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The...
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7572711 |
Method of manufacturing a semiconductor device
In an embodiment, a simplified method of manufacturing a semiconductor device reduces a step between cell and peripheral areas. First and second openings are formed through a plurality of thin...
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7572709 |
Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7566627 |
Air gap in integrated circuit inductor fabrication
In accordance with the invention, there are inductors with an air gap, semiconductor devices, integrated circuits, and methods of fabricating them. The method of making an inductor with an air gap...
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7566611 |
Manufacturing method for an integrated semiconductor structure
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a...
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7563672 |
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
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7557002 |
Methods of forming transistor devices
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material...
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7557011 |
Semiconductor device and method for fabricating the same
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device....
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7557014 |
Semiconductor system-in-package
A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer...
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7557013 |
Methods of forming a plurality of capacitors
A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode...
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7553738 |
Method of fabricating a microelectronic device including embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer...
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7553735 |
Scalable high performance non-volatile memory cells using multi-mechanism carrier transport
A plurality of select gates are formed over a substrate. In one embodiment, the select gates are formed vertically on the sidewalls of trenches. The substrate includes a plurality of diffusion...
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7544580 |
Method for manufacturing passive components
A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The...
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7544578 |
Structure and method for stochastic integrated circuit personalization
A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower...
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7541251 |
Wire bond and redistribution layer process
A manufacturing method of a semiconductor device with a copper redistribution line, a copper inductor and aluminum wire bond pads and the integration of the resulting device with an integrated...
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7541253 |
Method of forming an integrated resistor
In a semiconductor device, a thin film resistor is formed by making use of an interconnect structure and etching back the layers over the glue layer of the interconnect structure and using the glue...
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7541252 |
Methods of fabricating a semiconductor device including a self-aligned cell diode
A method of fabricating a semiconductor device includes forming a conductive layer on a semiconductor substrate, forming an insulating layer on the conductive layer, forming a word line and...
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7538005 |
Semiconductor device and method for fabricating the same
A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating...
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7534692 |
Process for producing an integrated circuit comprising a capacitor
An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The integrated circuit includes at least one...
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7531405 |
Method of manufacturing a dielectric layer and corresponding semiconductor device
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
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7531407 |
Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip inductors formed on the chip backside and connected to integrated circuits on the chip...
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7531416 |
Thick film capacitors on ceramic interconnect substrates
Thick-film capacitors are formed on ceramic interconnect substrates having high capacitance densities and other desirable electrical and physical properties. The capacitor dielectrics are fired at...
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7531417 |
High performance system-on-chip passive device using post passivation process
A system and method for forming post passivation passive components, such as resistors and capacitors, is described. High quality electrical components, are formed on a layer of passivation, or on...
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7528761 |
Analog/digital conversion using successive approximation and redundant weighting
Illustrative binary networks for analog/digital converters are described. For instance, an analog/digital converter may operate in accordance with a principle of successive approximation, and may...
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7527984 |
Semiconductor device
A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating...
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7524774 |
Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program
An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device having a capacitor, the capacitor...
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7524733 |
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized...
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7525832 |
Memory device and semiconductor integrated circuit
First electrode layer includes a plurality of first electrode lines (W 1 , W 2 ) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of...
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7524722 |
Resistance type memory device and fabricating method and operating method thereof
A resistance type memory device is provided. The resistance type memory device is disposed on a substrate and includes a tungsten electrode, an upper electrode, and a tungsten oxide layer. The...
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7524731 |
Process of forming an electronic device including an inductor
An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the...
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7517769 |
Integrateable capacitors and microcoils and methods of making thereof
Methods for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A method for integrally forming a capacitor and a microcoil on a substrate may involve...
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7510928 |
Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
A portion of a conductive layer ( 310, 910 ) provides a capacitor electrode ( 310.0, 910.0 ). Dielectric trenches ( 410, 414, 510 ) are formed in the conductive layer to insulate the capacitor...
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7510944 |
Method of forming a MIM capacitor
In a method of forming MIM capacitor structure, a TiW layer is formed and a capacitor mask is used to define areas of the TiW layer that will be sued in the formation of the MIM capacitor. A...
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7507589 |
Method of forming a MEMS inductor with very low resistance
A very, very low resistance micro-electromechanical system (MEMS) inductor, which provides resistance in the single-digit milliohm range, is formed by utilizing a single thick wide loop of metal...
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7498265 |
Epitaxial silicon growth
Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing...
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7494889 |
Method of manufacturing an interposer including at least one passive element at least partially defined by a recess therein
An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one...
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7494900 |
Back side wafer dicing
Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed...
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7494863 |
Method for manufacturing capacitor for semiconductor device
Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate;...
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7491600 |
Nanocrystal bitcell process integration for high density application
A method for making a multibit non-volatile memory cell structure is provided herein. In accordance with the method, a semiconductor substrate ( 101 ) is provided, and first and second sets of...
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7491968 |
Memory device using quantum dots
A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device...
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