Matches 401 - 450 out of 631 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >
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6451651 Method of manufacturing DRAM device invention  
A method of manufacturing a DRAM device comprises forming a bit line interlayer insulating layer over a substrate over which a bit line pattern is formed; planarizing the bit line interlayer...
6444517 High Q inductor with Cu damascene via/trench etching simultaneous module  
A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is...
6444482 Method of monitoring power supplied to heat a substrate  
Methods for monitoring power supplied to a substrate to form a doped or undoped crystalline semiconductor material are disclosed. The methods include providing a layer of an amorphous semiconductor...
6444488 Process of fabricating electronic microcomponent of the variable capacitor or microswitch type  
Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate ( 1 ) and a deformable membrane ( 20 ) which are located opposite each other,...
6436786 Method for fabricating a semiconductor device  
A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.
6432791 Integrated circuit capacitor and method  
Capacitors for integrated circuits with a common polysilicon layer for both MOS gates ( 274, 276, 278 ) and capacitor ( 270 ) lower plates but with implanted doping for the gates and masked...
6432767 Method of fabricating semiconductor device  
A semiconductor device having a bottom electrode, a ferroelectric film, and a top electrode formed on a semiconductor substrate, wherein the angle of each of the main cross sectional sides of the...
6429087 Methods of forming capacitors  
In one aspect, the invention encompasses a method of forming a capacitor. A mass is formed over an electrical node. An opening is formed within the mass. The opening has a lower portion proximate...
6420226 Method of defining a buried stack capacitor structure for a one transistor RAM cell  
A process for fabricating a buried stack capacitor structure, to be used in a one transistor, RAM cell, has been developed. The process features formation of a self-aligned, ring shaped storage...
6417061 Zener diode and RC network combination semiconductor device for use in integrated circuits and method therefor  
An improved semiconductor device and method which includes a zener diode and RC network combination that share common semiconductor mask steps during the fabrication process. A common N+ layer...
6417039 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core  
The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body ( 1 ) having a coil ( 3 ) with a magnetic core ( 4 ). By means of this method, the surface...
6417535 Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit  
A substantially vertical interdigitated plate capacitor, formed in interlayer dielectric material between upper and lower interconnect layers of conductors in an integrated circuit, comprising a...
6413386 Reactive sputtering method for forming metal-silicon layer  
Within a method for forming a metal-silicon layer there is first provided a reactor chamber. There is then positioned within the reactor chamber a substrate spaced from a metal source target. There...
6410397 Method for manufacturing a dielectric trench capacitor with a stacked-layer structure  
A trench is formed by forming a photoresist film on a second interlevel insulator and performing isoprotonic etching using the photoresist film as a mask. A lower electrode layer made of platinum...
6406967 Method for manufacturing cylindrical storage electrode of semiconductor device  
A method for manufacturing a cylindrical storage electrode of a semiconductor device includes forming a contact pad to be connected to an active region of a semiconductor substrate in an interlayer...
6406968 Method of forming dynamic random access memory  
A method of forming a dynamic random access memory. A substrate having a memory cell region and a logic circuit region is provided. The substrate also has a first dielectric layer thereon. The...
6402792 Electric double layer capacitor and process for its production  
An electric double layer capacitor comprising an electrode containing a carbonaceous material having a specific surface area of at least 500 m 2 /g, and an organic electrolytic solution capable of...
6399456 Method of fabricating a resistor and a capacitor electrode in an integrated circuit  
A semiconductor fabrication method is provided for fabricating a resistor and a capacitor electrode in an integrated circuit, which can help enhance the quality of the resultant integrated circuit....
6395611 Inductor or low loss interconnect and a method of manufacturing an inductor or low loss interconnect in an integrated circuit  
An integrated circuit with a buried layer for increasing the Q of an inductor formed in the integrated circuit. The substrate includes a highly doped buried preserving device and latchup...
6395350 Mesoporous transition metal oxide thin films and methods of making and uses thereof  
Mesoporous transition metal oxide thin films and methods for producing these films are provided. Also provided are methods of fabricating useful chemical sensors and electrochromic devices from the...
6395605 Multifunctional protective component  
A method of making a multifunctional protective component is disclosed. The method includes plastering a suspension comprising a mixture of glass dust, binder, and solvent onto a multilayer ZnO...
6387747 Method to fabricate RF inductors with minimum area  
A method for forming an RF inductor of helical shape having high Q and minimum area. The inductor is fabricated of metal or damascened linear segments formed on three levels of intermetal...
6388290 Single crystal silicon on polycrystalline silicon integrated circuits  
An integrated circuit comprising active and passive devices is formed in a thin slice of monocrystalline semiconductor bonded to a high resistivity polycrystalline silicon substrate. As compared...
6383858 Interdigitated capacitor structure for use in an integrated circuit  
The present invention provides a capacitor structure comprising an array having two dimensions and having first and second electrode elements alternating in both dimensions of the array, the first...
6383889 Semiconductor device having improved parasitic capacitance and mechanical strength  
A cavity structure formed in a semiconductor substrate and under a device formation region on which a device if formed. The cavity structure has supporting pillars providing the device formation...
6380023 Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits  
Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and related integrated circuitry constructions are described. In one embodiment, a plurality of...
6380045 Method of forming asymmetric wells for DRAM cells  
A fabrication method for forming asymmetric wells of a DRAM cell, and more particularly to a fabrication method for producing a transistor that is capable of reducing body effect, gate-swing and...
6372667 Method of manufacturing a capacitor for semiconductor memory devices  
A method of manufacturing a capacitor for semiconductor memory devices is disclosed. According to the present invention, a lower electrode is formed on the semiconductor substrate. A Ta 2 O 5 ...
6368887 Method of monitoring a process of manufacturing a semiconductor wafer including hemispherical grain polysilicon  
A method of monitoring a process of manufacturing a semiconductor wafer including an area of hemispherical grain polysilicon, the method comprising providing a probe including a liquid conductor;...
6365498 Integrated process for I/O redistribution and passive components fabrication and devices formed  
The present invention discloses an integrated method for I/O redistribution and in-situ passive components fabrication such that passive components such as resistors and capacitors can be formed...
6365482 I.C. thin film resistor stabilization method  
A method for stabilizing thin film structures fabricated on an I.C. wafer requires the performance of a rapid thermal annealing (RTA) step after the thin film material, preferably silicon-chromium...
6365480 IC resistor and capacitor fabrication method  
An IC resistor and capacitor fabrication method comprises depositing a dielectric layer over existing active devices and metal interconnections on an IC substrate. In a preferred embodiment, a...
6365483 Method for forming a thin film resistor  
The invention provides a method for forming a thin film resistor, which comprises the following steps: providing an insulator substrate; forming a patterned conductive layer over the insulator...
6362525 Circuit structure including a passive element formed within a grid array substrate and method for making the same  
A circuit structure combines an integrated circuit with a passive circuit element formed within a grid-array substrate. Formation of the circuit structure includes forming a passive circuit element...
6358756 Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme  
This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper...
6358808 Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same  
In a method of manufacturing a semiconductor device, an insulating film is formed on a semiconductor substrate. A semiconductor film pattern is formed on the insulating film. A direct thermal...
6355492 Process for the manufacturing of oxide electrodes for ferroelectric capacitor  
An electrode for a capacitor having two electrodes and a capacitor insulation layer formed of a dielectric film sandwiched between the two electrodes, at least one of the electrodes being formed of...
6355535 Method and structure of manufacturing a high-Q inductor with an air trench  
The structure of a high-Q inductor applied in a monolithic circuit according to the invention comprises a plurality of spiral metal lines and a plurality of dielectric layers, each dielectric layer...
6352888 Method of fabricating SRAM cell having a field region  
A static random access memory (SRAM) cell includes first and second load devices, first and second access transistors, first and second drive transistors, and two bit lines. The SRAM includes a...
6348391 Monolithic inductor with guard rings  
An integrated circuit and method of fabrication are disclosed for achieving electrical isolation between a spiral inductor and an underlying silicon substrate using standard semiconductor...
6344373 Antifuse structure and process  
According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred...
6344406 Method for manufacturing a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall  
It is possible to obtain a semiconductor device in which a contact and a wiring provided on the contact can be electrically connected well even if a shift of superposition is caused. Sidewalls 5 a...
6342424 High-Q spiral inductor structure and methods of manufacturing the structure  
A high-Q spiral inductor structure that utilizes a three-layer substrate, and methods of manufacturing the structure, are provided. The three-layer substrate is utilizable for CMOS circuits while...
6342164 Pinhole-free dielectric films  
A method for producing a pinhole-free dielectric film comprising applying a photopolymer to a first dielectric surface of a dielectric film having pinholes, exposing a second and opposing surface...
6340620 Method of fabricating a capacitor  
A process for fabricating a capacitor in a microcircuit, and the capacitor so fabricated. A first layer of a polycrystalline semiconductor, preferably polysilicon, is deposited. A layer of a binary...
6338994 Semiconductor device and method of fabricating thereof  
A semiconductor device having a bottom electrode, a ferroelectric film, and a top electrode formed on a semiconductor substrate, wherein the angle of each of the main cross sectional sides of the...
6338970 Ferroelectric capacitor of semiconductor device and method for fabricating the same  
There is provided a ferroelectric capacitor of semiconductor device including a SBT ferroelectric thin film. The SBT ferroelectric thin film has double layer structure in which each layer is...
6326256 Method of producing a laser trimmable thin film resistor in an integrated circuit  
A thin film resistor processing flow solves the problem of accurately incorporating the resistor (80) to be trimmed in an optimized multilayer stack (60,70). This is achieved by measuring the total...
6319790 Process for fabricating semiconductor device with multiple cylindrical capacitor  
A method for making a semiconductor device is provided. In the method, an insulating layer is formed over a semiconductor substrate, and a groove is formed in the insulating layer. Then, a first...
6316306 Memory cell array in a dynamic random access memory and method for fabricating the same  
A memory cell array structure of a DRAM is disclosed. The disclosed memory cell array includes at least one active region surrounded with an element isolating insulation layer in a semiconductor...
Matches 401 - 450 out of 631 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >